CYStech Electronics Corp. Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 1/6 High voltage switching diode BAS21S2 Description High voltage switching diode encapsulated in a SOD-323 small plastic SMD package. Features •Fast switching speed •Low forward voltage drop •Small plastic SMD package •Pb-free lead plating package Mechanical Data • Case: Molded Plastic, JEDEC SOD-323. • Terminals: Solder plated, solderable per MIL-STD-750 Method 2026 • Polarity: Indicated by cathode band. • Mounting Position : Any. • Weight: 0.0045 gram, 0.000159 ounce Symbol Outline SOD-323 BAS21S2 CYStek Product Specification Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings(Ta=25℃, unless otherwise specified) • Maximum Temperatures Storage Temperature Tstg.................................................................................................... -55~+150 °C Junction Temperature Tj ............................................................................................................. +150 °C • Maximum Power Dissipation Total Power Dissipation Ptot (Note)........................................................................................... 200 mW Derate above 25℃ ……………………………………………………………………….. 1.57mW/℃ • Maximum Voltages and Currents Continuous Reverse Voltage VR…………………………………………………………………… 250V Continuous Forward Current IF (Note)…………………………………………………………… 200 mA Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA • Thermal Resistance, Junction to Ambient Air RθJA……………………………………….…….625℃/W Note : Parts mounted on FR-5 board with minimum pad. Characteristics (Ta=25°C) Characteristic Symbol Reverse Breakdown Voltage Forward Voltage (Note) Reverse Leakage Current (Note) Diode Capacitance Reverse Recovery Time VBR VF(1) VF(2) IR(1) IR(2) CD trr Condition IR=100μA IF=100mA IF=200mA VR=200V,Tj=25℃ VR=200V,Tj=150℃ VR=0V, f=1MHz IF=IR=30mA RL=100Ω measured at IR=3mA Min. Max. Unit 250 - 1 1.25 100 100 5 V V V nA μA pF - 50 ns Notes: Pulse test, tp=380μs, duty cycle<2%. Ordering Information Device BAS21S2 BAS21S2 Package SOD-323 (Pb-free package) Shipping Marking 3000 pcs / Tape & Reel JS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 3/6 Typical Characteristics Reverse Leakage Current vs Reverse Voltage Forward Current vs Forward Voltage 100 150°C Pulse width=300μs Reverse Leakage Current---IR(μA) Instantaneous Forward Current---IF(mA) 1000 100 150°C 125°C 10 100°C 1 75°C 25°C 0.1 10 125℃ 100℃ 1 75℃ 0.1 25℃ 0.01 0.001 0 0.3 0.6 0.9 Forward Voltage---VF(V) 1.2 1.5 0 50 150 200 250 Reverse Voltage---VR(V) Power Derating Curve Junction Capacitance vs Reverse Voltage 300 10 Tj=25℃, f=1.0MHz PD, Power Dissipation(mW) Junction Capacitance---C J(pF) 100 1 250 200 150 100 50 0 0.1 0.1 1 10 Reverse Voltage---VR (V) BAS21S2 100 0 25 50 75 100 125 150 175 TA, Ambient Temperature(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BAS21S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BAS21S2 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C335S2 Issued Date : 2003.06.10 Revised Date : 2013.02.05 Page No. : 6/6 SOD-323 Dimension K A Marking: 5JS H 1 2 B D Style: Pin 1.Cathode 2.Anode J H E C 2-Lead SOD-323 Plastic Surface Mounted Package CYStek Package Code: S2 *: Typical Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 DIM A B C D Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 0.00 0.10 0.089 0.18 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAS21S2 CYStek Product Specification