MTN2N65BJ3

CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTN2N65BJ3
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
BVDSS
ID @VGS=10V, TC=25°C
ID @VGS=10V, TC=100°C
RDS(ON)@VGS=10V, ID=1A
650V
2A
1.3A
3.9Ω(typ)
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
TO-252(DPAK)
MTN2N65BJ3
G：Gate D：Drain S：Source
G
D S
Ordering Information
Device
MTN2N65BJ3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN2N65BJ3
CYStek Product Specification
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
IDM
EAS
IAS
EAR
dv/dt
650
±30
2.0
1.3
8.0
10
2
4.4
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
1.14
44
0.35
-55~+150
W
W
W/°C
°C
ID
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=2A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤1.8A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN2N65BJ3
Symbol
Rth,j-c
Rth,j-a
Value
2.8
110
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
650
2.0
-
0.7
2.8
3.9
4.0
±100
1
10
5.5
V
V/°C
V
S
nA
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=1A
VGS=±30V
VDS =650V, VGS =0V
VDS =520V, VGS =0V, TC=125°C
VGS =10V, ID=1A
11.4
2.3
5.7
8.4
8.4
21.2
11.6
324
37
19
3.4
17
16.8
16.8
42.4
23.2
486
56
29
-
nC
ID=2A, VDD=520V, VGS=10V
ns
VDD=325V, ID=1.8A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
f=1MHz
0.79
252
653
2
8
1.5
-
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
μA
A
V
ns
nC
IS=1A, VGS=0V
VGS=0, IF=1.8A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTN2N65BJ3
CYStek Product Specification
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.2
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current(A)
4
3
15V,14V,13V,12V,11V,10V,9V,8V,7V,6V
2
1
VGS=5V
VGS=4V
10
1
0.9
0.8
ID=250μA,
VGS=0V
0.7
0.6
0
0
1.1
20
30
40
VDS, Drain-Source Voltage(V)
-75
50
-50
2.5
10
VGS=10V
TA=25°C
VDS=10V
2
8
ID, Drain Current(A)
R DS(on), Static Drain-Source On-State
Resistance(Ω)
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
6
4
1.5
1
0.5
2
0
0
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
VGS, Gate-Source Voltage(V)
10
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
20
Ta=25°C
VGS=0V
IF, Forward Current(A)
R DS(on) , Static Drain-Source OnState Resistance(Ω)
-25
15
10
5
ID=1A
1
Tj=150°C
0.1
Tj=25°C
0.01
0.001
0
0
MTN2N65BJ3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Source Drain Voltage(V)
CYStek Product Specification
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Static Drain-Source On-resistance vs Ambient Temperature
1000
RDS(on) , Normalized Static Drain-Source
On-state Resistance
3.2
Capacitance-(pF)
Ciss
100
Coss
10
Crss
f=1MHz
1
2.8
2.4
2
1.6
1.2
0.8
ID=1A,
VGS=10V
0.4
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
30
-75
-50
-25
Gate Charge Characteristics
Maximum Safe Operating Area
10
10
100μs
1ms
10ms
100ms
1
1s
DC
Operation in this area is
limited by RDS(ON)
0.1
VDS=130V
VGS, Gate-Source Voltage(V)
ID, Drain Current(A)
0
25 50 75 100 125 150 175
TA, Ambient Temperature(°C)
8
VDS=325V
6
4
VDS=520V
2
ID=2A
0
0.01
1
10
100
VDS, Drain-Source Voltage(V)
0
1000
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
VGS(th), Normalized Threshold Voltage
ID, Maximum Drain Current(A)
2.5
2
1.5
1
0.5
0
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
25
50
75
100
125
TC, Case Temperature(°C)
MTN2N65BJ3
150
175
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Forward Transfer Admittance vs Drain Current
3500
3000
TJ(MAX) =150°C
TC=25°C
θ JC=2.8°C/W
2500
Power (W)
GFS , Forward Transfer Admittance(S)
10
2000
1500
1000
500
0
0.000 0.001
1
0.01
0.1
1
10
100
1000
1
0.1
VDS=15V
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
ID, Drain Current(A)
Pulse Width(s)
1
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=2.8°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTN2N65BJ3
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN2N65BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2N65BJ3
CYStek Product Specification
Spec. No. : C989J3
Issued Date : 2015.03.16
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
CYS
2N65B
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2N65BJ3
CYStek Product Specification