MTN7N60E3

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTN7N60E3
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 1/9
BVDSS : 600V
RDS(ON) : 1.08Ω(typ.)
ID : 7A
Description
The MTN7N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Switching Mode Power Supply
• LCD Panel Power
• Adapter
• E-bike Charger
Symbol
Outline
MTN7N60E3
TO-220
G：Gate
D：Drain
S：Source
G D S
MTN7N60E3
CYStek Product Specification
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
600
±30
7
4.4
28
187
7
14
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
TPKG
260
°C
Pd
135
1.08
-55~+150
W
W/°C
°C
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS≤7A, VDD=50V, L=7mH, VG=10V, starting TJ=+25℃.
3. ISD≤7A, dI/dt≤200A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN7N60E3
Symbol
Rth,j-c
Rth,j-a
Value
0.93
62.5
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
Min.
Typ.
Max.
Unit
Test Conditions
600
2.0
-
0.6
3.9
1.08
4.0
±100
1
10
1.2
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=3.5A
VGS=±30
VDS =600V, VGS =0
VDS =480V, VGS =0, Tj=125°C
VGS =10V, ID=3.5A
37
6
17.9
14.2
40
31.5
32.3
1332
114
61
-
nC
ID=6A, VDD=300V, VGS=10V
ns
VDD=300V, ID=6A, VGS=10V,
RG=10Ω, RD=50Ω
pF
VGS=0V, VDS=25V, f=1MHz
504.9
47.59
7
28
1.5
-
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
A
V
ns
μC
IS=7A, VGS=0V
VGS=0, IF=6A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN7N60E3
MTN7N60E3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
CYStek Product Specification
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3
20
16
15V
10V
9V
14
12
Static Drain-Source On-state
Resistance-RDS(on) (Ω)
Drain Current - ID(A)
18
7V
10
8
6V
6
5.5V
4
VGS=4.5V
0
0
10
20
30
40
50
Drain-Source Voltage -VDS(V)
2
1.5
1
ID=3.5A,
VGS=10V
0.5
5V
2
2.5
0
-100
60
-50
20
3
Ta=25°C
VGS=10V
2.5
Drain Current-I D(on)(A)
Static Drain-Source On-State
Resistance-R DS(on)(Ω)
150
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
2
1.5
1
VDS=30V
15
10
VDS=10V
5
0.5
0
0
0.1
1
10
Drain Current-ID(A)
0
100
10
15
20
Body Diode Forward Voltage Variation vs Source
Current and Temperature
100
5
Reverse Drain Current-I DR (A)
Ta=25°C
ID=3.5A
4
5
Gate-Source Voltage-VGS(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State
Resistance-R DS(ON)(Ω)
0
50
100
Ambient Temperature-Ta(°C)
3
2
1
VGS=0V
10
Ta=150°C
1
Ta=25°C
0.1
0
4
MTN7N60E3
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
10000
750
Drain-Source Breakdown Voltage
BVDSS(V)
f=1MHz
Capacitance-(pF)
Ciss
1000
Coss
100
700
650
600
ID=250μA,
VGS=0V
Crss
10
0
5
10
15
20
25
Drain-to-Source Voltage-VDS (V)
550
-100
30
-50
0
50
100
150
200
Ambient Temperature-Tj(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
12
100
Drain Current --- ID(A)
10
1ms
10ms
1
100ms
Operation in this area is
limited by RDS(ON)
0.1
DC
Single pulse
Tc=25°C; Tj=150°C
10
VDS=300V
VDS=480V
8
6
4
ID=7A
2
0
0.01
1
Gate-Source Voltage---VGS(V)
VDS=120V
10μ
100μs
10
100
Drain-Source Voltage -VDS(V)
1000
0
10
20
30
40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
9
7
6
(A)
Maximum Drain Current---I D
8
5
4
3
2
1
0
25
50
75
100
125
150
175
Case Temperature---TC (°C)
MTN7N60E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
ZθJC(t), Thermal Response
0.2
0.1
0.1
1.ZθJC(t)=0.93°C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN7N60E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 7/9
Test Circuit and Waveforms
MTN7N60E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 8/9
Test Circuit and Waveforms(Cont.)
MTN7N60E3
CYStek Product Specification
Spec. No. : C409E3
Issued Date : 2011.12.20
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
TO-220 Dimension
A
Marking:
B
D
E
C
K
M
I
1
3
G
CYS
7N60
Device Name
H
□□□□
2 3
Date Code
N
2
1
4
O
P
3-Lead TO-220 Plastic Package
CYStek Package Code: E3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
*: Typical
Inches
Min.
Max.
0.2441 0.2598
0.3386 0.3543
0.1732 0.1890
0.0492 0.0571
0.0142 0.0197
0.3858 0.4094
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
6.20
6.60
8.60
9.00
4.40
4.80
1.25
1.45
0.36
0.50
9.80
10.40
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0299 0.0394
0.0461 0.0579
*0.1000
0.5217 0.5610
0.5787 0.6024
Millimeters
Min.
Max.
*3.83
0.76
1.00
1.17
1.47
*2.54
13.25
14.25
14.70
15.30
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7N60E3
CYStek Product Specification