MTB11N03BQ8 BVDSS

Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03BQ8
BVDSS
ID@VGS=10V, TA=25°C
RDSON(typ)@VGS=10V, ID=12A
RDSON(typ)@VGS=4.5V, ID=12A
30V
12A
8.8mΩ
12.8mΩ
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
Outline
MTB11N03BQ8
SOP-8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
Shipping
MTB11N03BQ8-0-T3-G
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BQ8
CYStek Product Specification
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V*3
Continuous Drain Current @ TA=70°C, VGS=10V*3
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TA=25℃
Total Power Dissipation *3
TA=70℃
VDS
VGS
Operating Junction and Storage Temperature Range
Tj, Tstg
10s
Steady State
30
±25
12
7.6
ID
IDM
IAS
EAS
EAR
PD
V
8.3
6.6
48
12
72
5
Unit
*1
*2
1.4
2.5
1.6
0.9
-55~+150
A
mJ
W
°C
Thermal Data
Parameter
Symbol
t≤10s
Steady State
Steady State
Thermal Resistance, Junction-to-ambient *3
Thermal Resistance, Junction-to case
RθJA
RθJC
Typical
35
70
16
Maximum
40
85
25
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON)
*1
Dynamic
Ciss
Coss
Crss
MTB11N03BQ8
Min.
Typ.
Max.
30
1.0
-
19
8.8
12.8
2.5
±100
1
5
12
17
-
751
199
106
-
Unit
Test Conditions
mΩ
mΩ
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=11A
VGS=±25V
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
VGS =10V, ID=12A
VGS =4.5V, ID=12A
pF
VGS=0V, VDS=10V, f=1MHz
V
S
nA
μA
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Qg (VGS=10V) *1, 2
Qg (VGS=5V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Rg
Min.
-
Typ.
15.9
9.6
2.7
4.7
9
17.4
32.4
10
1.8
Max.
-
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
0.84
10.3
4.2
12
48
1.3
-
Unit
Test Conditions
nC
VDS=24V, VGS=10V, ID=11A
ns
VDS=15V, ID=5.5A, VGS=10V,
RGS=4.7Ω
Ω
f=1MHz
A
V
ns
nC
IS=12A, VGS=0V
IF=11A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
48
ID, Drain Current(A)
5V
BVDSS, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
40
VGS=4.5V
32
VGS=4V
24
16
VGS=3.5V
8
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Static Drain-Source On-State resistance vs Drain Current
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
100
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=3.5V
VGS=4.5V
10
VGS=10V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
100
ID=12A
80
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
90
70
60
50
40
30
20
10
0
0
MTB11N03BQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
2.0
VGS=10V, ID=12A
1.6
1.2
0.8
VGS=4.5V, ID=12A
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
f=1MHz
10
0.1
1
10
VDS, Drain-Source Voltage(V)
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
ID=11A
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
10
1
VDS=5V
Pulsed
Ta=25°C
0.1
0.01
0.001
8
6
VDS=6V
4
VDS=12V
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
14
RDS(ON)
Limit
10
100μs
1ms
10ms
1
100ms
1s
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.1
DC
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
VDS=24V
12
10
8
6
4
TA=25°C,RθJA=40°C/W,VGS=10V
2
0
0.01
0.01
MTB11N03BQ8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
48
300
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
40
250
32
200
Power (W)
ID, Drain Current (A)
VDS=10V
24
150
16
100
8
50
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
TJ(MAX) =150°C
TA=25°C
RθJA=40°C/W
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
1
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
MTB11N03BQ8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 9/9
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
Device Name
C
B
H
Date Code
J
K
E
D
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB11N03BQ8
CYStek Product Specification