DTC115TC3

Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 1/6
CYStech Electronics Corp.
NPN Digital Transistors (Built-in Resistors)
DTC115TC3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA115TC3
Equivalent Circuit
Outline
DTC115TC3
SOT-523
C
B
C
R1
E
R1=100 kΩ
B:Base
C:Collector
E:Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
DTC115TC3
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
50
50
5
100
150
150
-55~+150
V
V
V
mA
mW
°C
°C
CYStek Product Specification
Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 2/6
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage
VCBO
50
-
-
V
IC=50μA
Collector-Emitter Breakdown Voltage
VCEO
50
-
-
V
IC=1mA
Emitter-Base Breakdown Voltage
VEBO
5
-
-
V
IE=50μA
Collector-Base Cutoff Current
ICBO
-
-
0.5
μA
VCB=50V
Emitter-Base Cutoff Current
IEBO
-
-
0.5
μA
VEB=4V
VCE(sat)
-
-
0.3
V
IC=1mA, IB=0.1mA
DC Current Gain
hFE
100
-
600
-
VCE=5V, IC=1mA
Input Resistance
R
70
100
130
kΩ
Transition Frequency
fT
-
250
-
MHz
Collector-Emitter Saturation Voltage
VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Ordering Information
Device
DTC115TC3
DTC115TC3
Package
SOT-523
(Pb-free & Halogen-free package )
Shipping
Marking
3000 pcs / Tape & Reel
8U
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 3/6
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
[email protected]=5V
100
[email protected]=20IB
[email protected]=10IB
10
10
0.1
1
10
Collector Current---IC(mA)
100
0.1
1
10
Collector Current --- IC(mA)
100
Power Derating Curve
Power Dissipation---PD(mW)
160
140
120
100
80
60
40
20
0
0
DTC115TC3
50
100
150
Ambient Temperature --- Ta(℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC115TC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC115TC3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C358C3
Issued Date : 2004.03.09
Revised Date : 2012.07.19
Page No. : 6/6
SOT-523 Dimension
Marking:
3
8U
1
2
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
Style: Pin 1.Base
2.Emitter
3.Collector
*: Typical
Inches
Min.
Max.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
DIM
A
A1
A2
b1
b2
c
D
Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
DIM
E
E1
e
e1
L
L1
θ
Inches
Min.
Max.
0.028
0.035
0.057
0.069
0.020*
0.035
0.043
0.016 REF
0.010
0.018
0°
8°
Millimeters
Min.
Max.
0.700
0.900
1.450
1.750
0.500*
0.900
1.100
0.400 REF
0.260
0.460
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC115TC3
CYStek Product Specification