MTN4402Q8

Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN4402Q8
BVDSS
20V
ID
VGS=4.5V, ID=20A
20A
4.3mΩ
VGS=2.5V, ID=20A
5.3mΩ
RDSON(TYP)
Description
The MTN4402Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Symbol
Outline
MTN4402Q8
SOP-8
Pin 1
G：Gate
D：Drain
S：Source
MTN4402Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, ID=20A, VGS=10V, VDD=15V
TA=25℃
Total Power Dissipation *3
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
20
±12
20
16
140 *1
20
200
3.1
2
-55~+150
Unit
Value
20
40 *3
Unit
°C/W
°C/W
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
20
0.5
-
0.9
4.3
5.3
50
1.1
±100
1
25
5.5
7
-
-
35
72
6
10
12
5
73
22
-
Unit
Test Conditions
Static
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg(VGS=4.5V) *1, 2
Qg(VGS=10V) *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
MTN4402Q8
S
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±12, VDS=0
VDS =16V, VGS =0
VDS =16V, VGS =0, TJ=125°C
VGS =4.5V, ID=20A
VGS =2.5V, ID=20A
VDS =5V, ID=20A
nC
ID=20A, VDS=10V, VGS=10V
ns
VDS=10V, ID=20A, VGS=10V,
RG=3Ω
V
nA
μA
mΩ
CYStek Product Specification
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 3/9
CYStech Electronics Corp.
Ciss
Coss
Crss
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
3790
356
347
1.5
-
-
0.8
25
20
20
140
1
-
pF
VGS=0V, VDS=10V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IS=20A, VGS=0V
IF=20A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
MTN4402Q8-0-T3-G
MTN4402Q8
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
8V,7V,6V,5V,4V,3V
100
ID, Drain Current (A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
120
VGS=2V
80
60
40
1.2
1
0.8
0.6
20
ID=250μA,
VGS=0V
0.4
0
0
1
2
3
4
VDS, Drain-Source Voltage(V)
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
100
VGS=1.5V
10
VGS=2.5V
VGS=4.5V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=10V
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
160
2.4
ID=20A
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
120
80
40
VGS=10V, ID=20A
2
1.6
1.2
0.8
RDSON@Tj=25°C : 4.3 mΩ typ.
0.4
0
0
MTN4402Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
Crss
1000
C oss
1.6
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μA
0.4
0.2
100
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
100
10
1
VDS=5V
0.1
Ta=25°C
Pulsed
0.01
0.001
VDS=10V
ID=20A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
10
0
100
ID, Maximum Drain Current(A)
RDSON
Limited
100μs
10
1ms
10ms
1
0.1
100ms
TA=25°C, Tj=150°C
VGS=10V, θJA=125°C/W
Single Pulse
1s
MTN4402Q8
20
15
10
5
DC
TA=25°C, VGS=10V, RθJA=40°C/W
0
0.01
0.01
80
25
1000
100
20
40
60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
Typical Transfer Characteristics
500
100
VDS=5V
90
Drain Current -ID(A)
TJ(MAX) =150°C
TA=25°C
θJA=125°C/W
400
80
Power (W)
70
60
50
40
300
200
30
100
20
10
0
0
0.5
1
1.5
2
Gate-Source Voltage-VGS(V)
2.5
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.1
0.01
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=125°C/W
0.1
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
MTN4402Q8
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN4402Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4402Q8
CYStek Product Specification
Spec. No. : C910Q8
Issued Date : 2013.05.21
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
Marking:
I
C
B
H
Device Name
4402
Date Code
□□□□
J
E
D
K
Front View
Part A
Part A
M
L
N
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
Min.
Max.
0.1850
0.2007
0.1457
0.1614
0.2283
0.2441
0.0500*
0.0130
0.0201
0.1472
0.1527
0.0472
0.0638
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.70
5.10
3.70
4.10
5.80
6.20
1.27*
0.33
0.51
3.74
3.88
1.20
1.62
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0031
0.0110
0.0157
0.0323
0.0074
0.0102
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.08
0.28
0.40
0.83
0.19
0.26
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4402Q8
CYStek Product Specification