2014 2 SMIカタログ OSC1.indd

Crystal Clock Oscillators
32SMO
(+1.8V, +2.5V, +3.0V or +3.3V FIXED MODELS)
XTAL
32SMO
#3
Operating
Conditions
#2
1.0±0.2
Absolute
Max. Ratings
1.0
1.2
#1
1.0
#2
1.0
0.75
VCXO
Frequency stability
(over all conditions)
3.2±0.2
0.75
PIN
1
2
3
4
#4
TCXO
#3
CONNECTION
OPEN or “H”
“ L”
GND
OUTPUT
Z
VDD
Z : high impedance
C to +125゜
C
-55゜
VDD
+1.8V
+2.5V
+3.3V
Rise and fall times
"0" Level
"1" Level
Load
Disable delay time
Enable delay time
Start-up time
SSB phase noise
(at VDD = +3.3V & 133.000 MHz)
RMS jitter (12 kHz to 20.000 MHz band)
Aging
Reflow condition
+2.5V, +3.0V or +3.3V DC ±5%
VIH : 70% VDD min.
VIL : 30% VDD max.*2
-0.3V to +4.0V DC
Storage temperature
(-40゜
C to +85゜
C)
1.1
1.9
OCXO
OUTPUT WAVEFORM
C to +70゜
C (Standard)
-20゜
C to +85゜
C (W = Option)
-40゜
C to +105゜
C (WW = Option) 1.500 MHz to 80.000 MHz
-40゜
C to +125゜
C (WWW = Option) 1.500 MHz to 80.000 MHz
-40゜
+1.8V, +2.5V, +3.0V or +3.3V DC ±5%
Symmetry
Output
0.01μF
~
0.1μF
2.3
Supply voltage (VDD)
Stand-by control
voltage (Pin#1)
Supply voltage
Stand-by current*2
1.3
● WIDE FREQUENCY RANGE
● CMOS OUTPUT
● PACKAGE SIZE 3.2x2.5 mm
Operating
temperature
Input current (max. mA)
(Pin#1 = Open or VIH)
No load
SOLDERING PATTERN
CMOS
Specifications
32SMO*1
1.500 MHz to 135.000 MHz
133.000 MHz to 170.000 MHz
32SMO(A) : ±100 ppm over -20゜
C to +70゜
C
32SMO(B) : ±50 ppm over -20゜
C to +70゜
C
32SMO(C) : ±30 ppm over -20゜
C to +70゜
C
32SMO(D) : ±25 ppm over -20゜
C to +70゜
C
32SMO(E) : ±20 ppm over -20゜
C to +70゜
C
C to +85゜
C
32SMO(AW) : ±100 ppm over -40゜
C to +85゜
C
32SMO(BW) : ±50 ppm over -40゜
C to +85゜
C
32SMO(CW) : ±30 ppm over -40゜
C to +85゜
C
32SMO(DW) : ±25 ppm over -40゜
0.025gm (wt.)
2.5±0.2
CLK OSC
Actual size
3.2x2.5 mm
STANDARD SMD CLOCK OSCILLATORS
3.2x2.5 mm
Item
General part number
Frequency range
#1
1.5 to 170 MHz
STANDARD SPECIFICATIONS
32SMO
#4
Wide Freq.
SPXO
1.0M+
1.5
2.0
2.4
10M+
2.0
2.3
3.5
40M+
5.0
6.0
7.0
Frequency
75M+
85M+
7.0
7.5
8.0
8.5
9.0
10.5
101M+
10
12
15
135M+
n.a.
25.5
29.5
10 μA max. (Pin#1 = VIL) … -40゜
C to +85゜
C
20 μA max. (Pin#1 = VIL) … -40゜
C to +105゜
C / +125゜
C
45% to 55% at 1/2 VDD level
6 ns max.
3 ns max.
(10% VDD to 90% VDD level)
(10% VDD to 90% VDD level)
VOL : 10% VDD max.
VOH : 90% VDD min.
15 pF max. (CMOS)
200 ns max.
10 ms max.
10 ms max.
-135 dBc / Hz, Typical at 1 kHz offset
-158 dBc / Hz, Typical at 1 MHz offset
500 fs max. (80 fs, Typical at 133.000 MHz)
±5 ppm max. at +25゜
C ±3゜
C for first year
+250゜
C ±10゜
C for 10 seconds
+170゜
C ±10゜
C for 1 to 2 minutes (preheating)
PACKAGE DATA
Terminal plating
RoHS
72
Metal
Ceramic
Seam
Tungsten (metalized)
Gold / Nickel
(surface) / (under)
Compliant (Pb-free)
L
∅
1.5 +
0
-0 .1
1.75±0.1
4.0±0.1
32SMO
2.0±0.1
D
Lid
Base
Sealing
Terminal
Package
C
Item
TAPE SPECIFICATIONS
M
B
J
TEST CIRCUIT
A
MCF
( * 1 ) F inal par t number to be as s i gned w i th pac k age ty pe, i nput v ol tage, fr equenc y s tabi l i ty, oper ati ng tem pe rat ure and f requency.
e. g. 32S M O( 1.8VD ) 24.000MH z
( * 2 ) I nt er nal c r ys tal os c i l l ati on to be hal ted ( Pi n#1 = V IL )
F
A
B
C
D
F
J
L
M
Reel Dia.
Qty/Reel
3.5
2.8
8.0
3.5
4.0
1.0
0.25
1.4
180
1000pcs
2000pcs