BB535

Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
BB 535
1
1
CATHODE
2
ANODE
2
CASE 477– 02, STYLE 1
SOD– 323
MAXIMUM RATINGS
Parameter
Diode Reverse Voltage
Peak reverse voltage ( R > 5kΩ)
Forward Current
Operating temperature range
Storage temperature
Symbol
VR
V RM
IF
T op
T stg
Value
30
35
20
- 55 ~ + 125
- 55 ... + 150
Unit
V
V
mA
°C
°C
Symbol
Value
Unit
R thJA
<450
K/W
THERMAL RESISTANCE
Parameter
Junction - ambient
DC CHARACTERISTICS
Characteristic
Reverse current
V R = 30 V, T A = 25 °C
V R = 30 V, T A = 85 °C
Symbol
IR
Min
Typ
Max
–
–
–
–
10
200
17.5
14.01
2.05
1.9
18.7
15
2.24
2.1
20
16.1
2.4
2.3
6
6.7
7.5
8.2
8.9
9.8
–
–
2.5
–
–
0.55
2
0.65
–
Unit
nA
AC CHARACTERISTICS
Diode capacitance
V R = 1 V, f = 1 MHz
V R = 2 V, f = 1 MHz
V R = 25 V, f = 1 MHz
V R = 28 V, f = 1 MHz
Capacitance ratio
V R = 2 V, V R = 25 V, f = 1 MHz
Capacitance ratio
V R = 1 V, V R = 28 V, f = 1 MHz
Capacitance matching
V R = 1 ... 28 V, f = 1 MHz
Series resistance
V R = 3 V, f = 470 MHz
Series inductance
CT
pF
C T2 / C T25
–
C T1 / C T28
–
∆ C T/ C T
r
%
Ω
s
Ls
nH
S6–1/3
BB 535
Temperature coefficient of the diodecapacitance
T Cc = f ( V R ) f = 1MHz
Diode capacitance
C T = f ( V R ) f = 1MHz
10 -1
20
18
16
10 -2
T Cc ( 1/°C )
C T ( pF )
14
12
10
8
10 -3
6
10 -4
4
2
10 -5
10 0
0
0
5
10
15
20
25
30
10 1
V R( V )
10 2
V R( V )
Reverse current
I R = f ( T A ), V R = 28V
Normalized diode capacitance
C (T A) / C (25°C) = f ( T A ), f = 1MHz, V R = Parameter
10 3
1.06
1V
1.02
10 2
I R ( pA )
C TA / C 25
1.04
2V
25V
1.00
10 1
0.98
10 0
0.96
-30
-10
10
30
50
T A ( °C )
70
90
110
-10
10
30
50
70
90
100
T A ( °C )
S6–2/3
BB 535
Reverse current
I R = f ( V R ), T A = Parameter
10 3
85°C
I R ( pA )
10 2
25°C
10 1
10 0
10 -1
10 0
10 1
10 2
V R( V )
S6–3/3