ET4N60 600V, 4A, N-Channel Power MOSFET Features VDSS=600V ¾ ¾ ¾ IDS=4A RDS(ON)=2.5 Ω ¾ ¾ RDS(ON)= (Max. 2.5 Ω)@VGS=10V. Gate Charge (Typical 15nC). Improved dv/dt Capability, High Ruggedness. 100% Avalanche Tested. Maximum Junction Temperature Range(150oC). Symbol ¾ ¾ ¾ Pin Description Ordering Information Applications Switching Application Adaptor LED Lighting Pin Assignment 1 2 3 Part Number Package ET4N60-220-T TO-220 G D S Tube ET4N60-220F-T TO-220F G D S Tube ET4N60-252-T TO-252 G D S Tube ET4N60-252-R TO-252 G D S Tape Reel www.estek.com.cn 1 Packing Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Absolute Maximum Ratings Symbol Value Units Drain to Source Voltage 600 V Continuous Drain Current(@TC = 25 °C) 4.0 A Continuous Drain Current(@TC = 100 °C) 2.5 A IDM Drain Current Pulsed 16 A VGS Gate to Source Voltage +30 V EAS Single Pulsed Avalanche Energy 240 mJ EAR Repetitive Avalanche Energy 10 mJ Peak Diode Recovery dv/dt 4.5 V/ns VDSS ID dv/dt PD TSTG, TJ Parameter Total Power Dissipation (@TC = 25 °C) TO-220 105 TO-220F 33 TO-252 50 Storage Temperature, Junction Temperature W -55~150 °C Notes: (1).. Repeativity rating : pulse width limited by junction temperature (2).. L = 27.5mH, IAS = 4.0 A, VDD = 50 V, RG = 25 Ω , Starting TJ = 25 °C (3).. ISD ≤ 4.0 A, di/dt ≤ 200 A/us, VDD ≤ BVDSS, Starting TJ = 25 °C Thermal Characteristics Symbol RθJC RθJA Value Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Min. Typ. Max. TO-220 - - 1.18 TO-220F - - 3.79 TO-252 - - 2.5 TO-220 - - 62.5 TO-220F 62.5 TO-252 83 Units °C/W Source-Drain Diode Characteristics and Maximum Ratings Symbol Parameter IS Maximum Continuous Source-Drain Diode Forward Current Min. - ISM Maximum Pulsed Source-Drain Diode Forward Current - - 16 VSD Diode Forward Voltage IS = 4.0 A, VGS = 0 V - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge IS = 4.0 A, VGS = 0 V, dIF/dt = 100 A/us - 2.2 - uC www.estek.com.cn Test Conditions 2 Typ. Max. - 4.0 Units A Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Electrical Characteristics (TC=25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V ID = 250 uA, Referenced to 25 °C - 0.6 - V/°C VDS = 600 V, VGS = 0 V - - 10 uA VDS = 480 V, TC = 125 °C - - 100 uA Gate-Source Leakage, Forward VGS = 30 V, VDS = 0 V - - 100 nA Gate-source Leakage, Reverse VGS = -30 V, VDS = 0 V - - -100 nA Off Characteristics BVDSS ΔBVDSS/ ΔTJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current IGSS VGS = 0 V, ID = 250 uA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 - 4.0 V RDS(ON) Static Drain-Source On-state Resistance VGS = 10 V, ID = 2.0 A - 2.0 2.5 Ω VGS = 0 V, VDS =25 V, f = 1 MHz - 545 710 60 80 - 8 11 VDD = 300 V, ID = 4.0 A, RG =25 Ω Pulse Width ≤ 300us, - 10 30 - 35 80 - 45 100 - 40 90 VDS = 480 V, VGS = 10 V, ID = 4.0 A - 15 2.8 20 - - 6.2 - Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pF Dynamic Characteristics td(on) tr td(off) Turn-on Delay Time Rise Time Turn-off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge(Miller Charge) www.estek.com.cn 3 ns nC Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Typical Characteristics www.estek.com.cn 4 Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Typical Characteristics (Continued) www.estek.com.cn 5 Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Package Information TO-220 www.estek.com.cn 6 Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Package Information TO-220FP www.estek.com.cn 7 Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011 ET4N60 Package Information TO-252 www.estek.com.cn 8 Copyright @ Estek Electronics Co., Ltd Version 0.2 26 Sep 2011