ROHM RB557W

Data Sheet
Schottky Barrier Diode
RB557W
Dimensions (Unit : mm)
Land size figure (Unit : mm)
0.5 0.5
0.7
1.6± 0.2
0.3±0.1
0.05
Features
1)Ultra small mold type. (EMD3)
2)Low VF
3)High reliability
0.15±0.05
0.7
0.1Min
0.6
0.6
EMD3
0.55±0.1
0.5
0.5
1.0±0.1
Construction
Silicon epitaxial planar
0.7
0~0.1
(1)
(2)
0.2±0.1
-0.05
1.6±0.2
0.8±0.1
(3)
1.3
Applications
General rectification
0.7±0.1
Structure
ROHM : EMD3
JEDEC : SOT-416
JEITA : SC-75A
dot (year week factory
Taping specifications (Unit : mm)
φ1.55±0.1
φ1.5 0.1
00
2.0±0.05
0.3±0.1
8.0±0.2
0~0.1
1.8±0.2
1.8±0.1
5.5±0.2
3.5±0.05
1.75±0.1
4.0±0.1
φ0.5±0.1
0.9±0.2
Absolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
Storage temperature
Limits
Symbol
VR
Io
IFSM
Tj
Tstg
Unit
V
mA
mA
°C
°C
30
100
500
125
40 to 125
(*1) Rating of per diode
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
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Conditions
Symbol
VF1
VF2
Min.
Typ.
Max.
Unit
-
-
0.35
V
IF=10mA
-
-
0.49
V
IR
-
-
10
μA
IF=100mA
VR=10V
1/3
2011.04 - Rev.A
Data Sheet
RB557W
10000
Ta=75℃
1
Ta=-25℃
0.1
Ta=25℃
0.01
0.001
Ta=75℃
100
Ta=25℃
10
1
Ta=-25℃
0.1
0.01
0
100
200
300
400
500
600
10
0
280
270
260
15
10
AVE:2.017uA
5
VF DISPERSION MAP
10
AVE:3.90A
5
0
14
13
12
AVE:17.34pF
10
Ifsm
8.3ms 8.3ms
1cyc
5
Ifsm
1
5
10
0.1
100
IFSM DISRESION MAP
Per diode
time
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
IF=10mA
100
Per diode
0.08
0.08
10
10
0.1
0.1
Rth(j-a)
Mounted on epoxy board
1
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Rth(j-c)
t
0
0
1ms
15
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1cyc
Ifsm
IM=1mA
16
IR DISPERSION MAP
10
100
17
10
0
1000
18
11
AVE:270.2mV
15
20
Ta=25℃
f=1MHz
VR=0V
n=10pcs
19
20
20
5
10
15
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
20
Ta=25℃
VR=10V
n=30pcs
25
REVERSE CURRENT:IR(uA)
FORWARD VOLTAGE:VF(mV)
30
30
Ta=25℃
IF=10mA
n=30pcs
250
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
300
290
10
1
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
f=1MHz
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
100
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
100
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(mA)
1000
D=1/2
0.06
DC
Sin(θ=180)
0.04
0.06
0.04
DC
Sin(θ=180)
0.02
0.02
D=1/2
300us
1
0.001
0
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
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0
0
0.1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2/3
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
2011.04 - Rev.A
Data Sheet
RB557W
0.3
0.3
0.2
DC
0A
0V
Io
t
T
Per diode
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Per diode
Io
0A
0V
t
DC
0.2
T
VR
D=t/T
VR=15V
Tj=125℃
D=1/2
0.1
Sin(θ=180)
0
0
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
125
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© 2011 ROHM Co., Ltd. All rights reserved.
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
3/3
2011.04 - Rev.A
Notice
Notes
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R1120A