1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT White LED Driver for LCD Backlights TYPE BD9204F FEATURE ・ ・ ・ ・ ・ ・ ・ Input voltage range 7V-15V Built-in 3ch boost DCDC converter (current mode) OVP, SCP, OPEN protection Analog dimming, PWM dimming enable Under voltage lock out (UVLO) Fail pin annotate abnormal state SOP28 package ○ ABSOLUTE MAXIMUM RATINGS PARAMETER (Ta=25℃) Power Supply Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Symbol Limit Unit Vccmax 20 V Pd Topr Tstg 750 *1 -40～+85 -55～+150 mW ℃ ℃ *1 Pd derated at 6.0 mW/℃ for temperature above Ta=25℃, mounted on 70mm×70mm×1.6mm 1 layer(cupper area 70mm×70mm)glass-epoxy PCB. This product is not designed for protection against radioactive rays. ○ OPERATING CONDITIONS (Ta=25℃) PARAMETER Power Supply Voltage Symbol VCC REV. Ａ Limit 7～15 Unit V 2/4 ○ELECTRICAL CHARACTERISTICS(unless otherwise specified VCC=12V, Ta=25℃) PARAMETER Symbol MIN. Limit TYP. MAX. UNIT Conditions 【Total Current Consumption】 Circuit Current ICC － 4.7 - mA STB=H, SEL=L, PWM=L Standby Current IST － 0 10 uA STB=L VREG Output Voltage VREG 4.8 5.0 5.2 V IO=0mA, CREG=1uF VREG input current IREG 2.16 3.6 5.04 mA VREG=5.25V (input externally) STB=H, SEL=L, PWM=L N1, N2, N3 resistance1 RONH - 4.0 - Ω ION=-10mA Between output N and internal power supply N1, N2, N3 resistance2 RONL - 2.0 - Ω ION=10mA ILED threshold voltage VFB (-2%) 1.5 (+2%) V VREF=1.5V COMP1,2,3 sink current ICOMPSI - 100 - uA VLED=2.0V COMP1,2,3 source current ICOMPSO - 100 - uA VLED=1.0V FRT 270 300 330 kHz RT=160kΩ SS source current ISS - 1.0 - uA SS END pin voltage VSS - 5.0 - V 【VREG】 【Boost Driving Pin】 【Error-Amp block】 【CT Oscillator block】 Oscillation Frequency 【SOFT START】 【OVP and SCP detection】 Over Voltage Protection voltage OVP hysteresis Short Circuit Protection voltage SCP hysteresis VOVP 1.65 2.0 2.35 V Sweep up VOVPHYS - 0.05 - V Sweep down VSCP 0.05 0.20 0.35 V Sweep down VSCPHYS - 0.05 - V Sweep up IOFAIL=1mA 【Fail pin】 Low level voltage (normal state) VFAIL - 0.2 0.5 V Leak current (abnormal state) ILFAIL - - 2 uA VOFAIL=4V CP pin charge current ICP - 1 - uA VCP=0V CP detect voltage VCP - 2.0 - V Input Low voltage VSELL -0.3 - 0.8 V CH1,CH2,CH3=enable Input Middle voltage VSELM 1.6 - 3.0 V CH1,CH2,=enable Input High voltage VSELH 4.2 - - V CH1=enable Input Low voltage VSTBYL -0.3 - 0.8 V Input High voltage VSTBYH 2.0 - - V Input Low voltage VPWML -0.3 - 1.2 V Input High voltage VPWMH 3.0 - - V 【SEL pin】 【STB pin】 【PWM pin】 (This product is not designed for protection against radioactive rays.) REV. Ａ 3/4 VIN ○ BLOCK DIAGRAM VCC GND BD9204F ADIM VCC STB PDIM N1 RT OCP1 SS ILED1 PGND FAIL GND1 STB GND COMP1 OVP1 STB FB1 COMP1 VREF VREF PDIM PWM SEL SEL OCP2 FAIL OVP2 COMP2 VREG VREF4V FB2 COMP2 GND1 VIN N2 ILED2 FAIL PGND GND1 VIN REG FB3 COMP3 PGND CP PGND PGND PGND OCP3 UVLO OVP3 COMP3 N3 VIN ILED3 PGND GND1 ○PACKEGE, MARKING SPECIFICATION SOP-28 BD9204F Lot No. ○ PIN No. & PIN NAME No. name 1 VREF 2 FAIL 3 SS 4 RT function No. name analog dimming signal input 15 ILED1 abnormal state output 16 COMP1 CH1 error amplifier output soft start setting 17 COMP2 CH2 error amplifier ouput oscillation frequency setting 18 COMP3 CH3 error amplifier output 5 OCP3 CH3 DCDC over current protection 19 SEL 6 PGND power ground pin 20 UVLO 7 N3 8 OCP2 9 N2 10 OCP1 function CH1 current signal feedback input power on channel select input the voltage monitor input for UVLO CH3 DCDC switching output 21 GND analog ground pin CH2 DCDC over current protection 22 PWM PWM dimming signal input CH2 DCDC switching output 23 OVP1 CH1 boost voltage monitor input CH1 DCDC over current protection 24 OVP2 CH2 boost voltage monitor input CH3 boost voltage monitor input 11 N1 CH1 DCDC switching output 25 OVP3 12 STB ON/OFF logic input 26 CP 13 VCC Power pin 27 ILED3 CH3 current signal feedback input 14 VREG internal power supply output 28 ILED2 CH2 current signal feedback input REV. Ａ latch OFF timer setting 4/4 ○ Operation Notes 1) Absolute maximum ratings An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2) GND voltage The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages up to -0.3 V to be applied to the ICT pin. 3) Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 4) Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 5) Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 6) Mutual impedance Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance). 7) External components The input DC voltage or DC current or temperature of external components such as inductor or capacitor affects its electrical character. . The ripple current through capacitor over regulation also affect to its reliability. External components should be chosen and made sure, considering the margins in all operational condition. 8) Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, as shown in the figures below, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause the behavior described above. Use caution when designing the circuit. Transistor (NPN) Resistor B (Pin B) ～ ～ (Pin A) E ～ ～ C GND N P+ P P+ N N P substrate Parasitic elements GND (Pin A) P+ N P N N N P substrate Parasitic elements (Pin B) GND C ～ ～ B ～ ～ Parasitic elements Other Adjacent Elements GND + P E GND Simplified structure of a Monolithic IC REV. Ａ Parasitic elements Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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