AWM6422 - Anadigics

AWM6422
2.3-2.4 GHz WiMAX Power Amplifier Module
Data Sheet - Rev 2.2
FEATURES
• InGaP HBT Technology
• > 30 dB Gain
• 2.5 % EVM at +22 dBm (+3.3 V Supply)
• 4 % EVM at +23.5 dBm (+3.3 V Supply)
• 2.5 % EVM at +23.5 dBm (+4.2 V Supply)
• 4 % EVM at +25 dBm (+4.2 V Supply)
• High Efficiency
• Integrated 25 dB Attenuator
• Integrated Output Power Detector
• 50  Matched RF Ports for Reduced External
Component Count
• RoHS Compliant 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
M18 Package
12 Pin 4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
APPLICATIONS
• WiMAX Tranceivers That Support the IEEE
802.16d-2004, IEEE 802.16e-2005, and the
ETSI EN301-021 Wireless standards
PRODUCT DESCRIPTION
power. The integrated detector can be used to monitor
output power, and the integrated 25 dB step attenuator
enables gain control. No external circuits are required
for biasing or RF impedance matching, thus reducing
external component costs and facilitating circuit board
designs.
The ANADIGICS AWM6422 WiMAX Power Amplifier
is a high performance device that delivers exceptional
linearity and efficiency at high levels of output power.
Designed for portable or mobile applications in the
2.3-2.4 GHz band, it supports the IEEE 802.16e-2005
wireless standard, as well as the IEEE 802.16d-2004
and ETSI EN301-021 standards.
The AWM6422 is manufactured using advanced
InGaP HBT technology that offers state-of-the-art
reliability, temperature stability, and ruggedness. It is
offered in a 4.5 mm x 4.5 mm x 1.4 mm surface mount
module optimized for use in a 50  system.
The device requires only a nominal +3.3 V supply and
a low-current bias input. An increase in supply voltage
produces an increase in the maximum linear output
Supply
Voltage
RF Input
Supply
Voltage
Step
Attenuator
Matching
Network
Bias
Control
Attenuator
Control
Bias
Voltage
RF Output
Power
Detector
Detector
Ouput
Ground
Figure 1: Functional Block Diagram
10/2008
AWM6422
VCC
1
12 VCC
RFIN
2
11 GND
GND
3
10 RFOUT
VBIAS
4
9
GND
VCC
5
8
GND
VATTN
6
7
DET
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VCC
Supply Voltage
2
RFIN
RF Input
3
GND
Ground
4
VBIAS
Bias/Shutdown
5
VCC
Supply Voltage
6
VATTN
Attenuator Control
7
DET
Detector Output
8
GND
Ground
9
GND
Ground
10
RFOUT
RF Output
11
GND
Ground
12
VCC
Supply Voltage
Data Sheet - Rev 2.2
10/2008
AWM6422
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC)
0
+5.0
V
Bias Voltage (VBIAS)
0
+3.0
V
Attenuator Control Voltage (VATTN)
0
+3.7
V
RF Input Power
-
0
dBm
ESD Rating
400
1000
-
V
HBM
CDM
MSL Level
3
4
-
-
235 °C Peak Reflow
250 °C Peak Reflow
-40
+150
°C
Storage Temperature
COMMENTS
OFDM modulated signal
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under
these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
Operating Frequency (f)
2300
-
2400
MHz
Supply Voltage (VCC)
+2.9
+3.3
+4.2
V
Bias Voltage (VBIAS)
+2.80
0
+2.85
-
+2.90
+0.7
V
PA"on"
PA"shut down"
+2.3
0
-
+3.7
+0.7
V
Attenuator enabled
Nominal gain
RF Output Power (POUT)
-
+23.5
-
dBm
Case Temperature (TC)
-40
-
+85
°C
Attenuator Control Voltage (VATTN)
Logic High
Logic Low
COMMENTS
OFDM Modulated Signal
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Data Sheet - Rev 2.2
10/2008
3
AWM6422
Table 4: Electrical Specifications
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, f = 2.3 GHz, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
Gain
28.5
32
35
dB
23
25
27
dB
Output Power Meets Spectrum Mask
-
+23.5
-
dBm
EVM
-
2.5
4
3.2
-
%
Output P1dB
-
+30
-
dBm
CW
Output IP3
-
+41
-
dBm
two CW tones, +19 dBm
output per tone
Harmonics
-
-35
-
dBc
at +23.5 dBm POUT
Power-Added Efficiency
-
20
-
%
at +23.5 dBm POUT
Power Detector Voltage
at +22 dBm POUT
at +14 dBm POUT
-
+1.3
+0.5
-
V
High impedance load
85
108
131
mA
Current Consumption
VCC
VCC
VBIAS
VATTN
-
305
340
6.8
0.2
368
8.0
1.0
Leakage Current (2)
-
1.7
3.0
Attenuator Step
Quiescent Current
mA
mA
COMMENTS
ETSI EN301-021 Type G
at +22 dBm POUT
at +23.5 dBm POUT
POUT = +22 dBm
POUT = +23.5 dBm
Logic High = +3.3 V
PA shut down (VBIAS = 0V)
Note:
1. All RF measurements performed with an 802.11g 54 Mbps OFDM signal unless otherwise noted.
(2) Lower leakage current may be obtained by using an alternate application circuit. Please refer to the ANADIGICS
application note titled “AWM6423 Reduced Leakage Current in Off State.”
4
Data Sheet - Rev 2.2
10/2008
AWM6422
Figure 3: Gain vs. Output Power
(TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
34
Figure 4: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +2.9 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
7.0
Frequency
33
6.5
2.30 GHz
2.35 GHz
2.40 GHz
32
2.30 GHz
2.35 GHz
2.40 GHz
5.5
5.0
Uncorrected EVM (%)
31
Gain (dB)
Frequency
6.0
4.5
30
4.0
29
3.5
3.0
28
2.5
27
2.0
1.5
26
1.0
25
0.5
24
13
14
15
16
17
18
19
20
21
22
23
24
25
0.0
13
14
15
16
17
34
20
21
22
23
24
25
7.0
2.30 GHz
2.35 GHz
2.40 GHz
32
Frequency
6.5
Frequency
33
2.30 GHz
2.35 GHz
2.40 GHz
6.0
5.5
Uncorrected EVM (%)
31
Gain (dB)
19
Figure 6: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 5: Gain vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
30
29
28
27
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
26
1.0
25
0.5
0.0
24
13
14
15
16
17
18
19
20
21
22
23
24
13
25
14
15
16
17
Figure 7: Gain vs. Output Power
(TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
34
20
21
22
23
24
25
7.0
6.5
2.30 GHz
2.35 GHz
2.40 GHz
32
19
Figure 8: Uncorrected EVM vs. Output Power
(TC = +25 °C, VCC = +4.2 V, VBIAS = +2.85 V, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Frequency
33
18
Output Power (dBm)
Output Power (dBm)
Frequency
2.30 GHz
2.35 GHz
2.40GHz
6.0
5.5
Uncorrected EVM (%)
31
Gain (dB)
18
Output Power (dBm)
Output Power (dBm)
30
29
28
27
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
26
1.0
25
0.5
0.0
24
13
14
15
16
17
18
19
20
21
22
23
24
25
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
Output Power (dBm)
Data Sheet - Rev 2.2
10/2008
5
AWM6422
Figure 9: Gain vs. Frequency
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 10: Uncorrected EVM vs. Frequency
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
POUT = +22 dBm, 54 Mbps OFDM Modulation,
system EVM approx. 0.8 %)
34
7.0
6.5
33
6.0
32
5.5
Uncorrected EVM (%)
Gain (dB)
31
30
29
28
27
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
26
1.0
25
0.5
24
2.28
2.30
2.32
2.34
2.36
2.38
2.40
0.0
2.28
2.42
2.30
2.32
2.34
Frequency (GHz)
2.38
2.40
2.42
Figure 12: Effects of Bias Voltage (VBIAS) on EVM
(TC = +25 °C, VCC = +3.3 V, f = 2.35 GHz, 54 Mbps
OFDM Modulation, system EVM approx. 0.8 %)
Figure 11: Supply Current vs. Output Power
(TC = +25 °C, VBIAS = +2.85 V, f = 2.35 GHz,
54 Mbps OFDM Modulation)
400
7.0
Vcc
6.5
+2.9 V
+3.3 V
+4.2 V
6.0
VBIAS
+2.80 V
+2.85 V
+2.90 V
5.5
Uncorrected EVM (%)
350
300
Icc (mA)
2.36
Frequency (GHz)
250
200
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
150
1.0
0.5
0.0
100
13
14
15
16
17
18
19
20
21
22
23
24
13
25
14
15
16
17
Figure 13: Detector Voltage vs. Output Power
(TC = +25 °C, VCC = +3.3 V, VBIAS = +2.85 V,
54 Mbps OFDM Modulation)
20
21
22
23
24
25
2.5
Frequency
Vcc
2.30 GHz
2.35 GHz
2.40 GHz
+2.9 V
+3.3 V
+4.2 V
2.0
Detector Voltage (V)
2.0
Detector Voltage (V)(Vdc)
19
Figure 14: Effects of Supply Voltage (VCC) on
Detector Voltage (TC = +25 °C, VBIAS = +2.85 V,
f = 2.35 GHz, 54 Mbps OFDM Modulation)
2.5
1.5
1.0
0.5
1.5
1.0
0.5
0.0
13
14
15
16
17
18
19
20
Output Power (dBm)
6
18
Output Power (dBm)
Output Power (dBm)
21
22
23
24
25
0.0
13
14
15
16
17
18
19
20
Output Power (dBm)
Data Sheet - Rev 2.2
10/2008
21
22
23
24
25
AWM6422
Figure 15: Gain vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
Figure 16: Effects of Case Temperature on EVM
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
54 Mbps OFDM Modulation, system EVM
approx. 0.8 %)
7.0
34.0
5.5
Uncorrected EVM (%)
32.5
Gain (dB)
+85 deg C
+25 deg C
-40 deg C
6.0
33.0
32.0
31.5
31.0
30.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
30.0
1.0
29.5
0.5
29.0
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
0.0
90
13
Case Temperature (deg C)
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
Figure 18: Effects of Case Temperature on
Detector Voltage (VCC = +3.3 V, VBIAS = +2.85 V,
f = 2.35 GHz, 54 Mbps OFDM Modulation)
Figure 17: Supply Current vs. Case Temperature
(VCC = +3.3 V, VBIAS = +2.85 V, f = 2.35 GHz,
POUT = +22 dBm, 54 Mbps OFDM Modulation)
315
2.0
Case Temp
1.8
310
+85 deg C
+25 deg C
-40 deg C
1.6
Detector Voltage (V)
305
300
Icc (mA)
Case Temp
6.5
33.5
295
290
285
1.4
1.2
1.0
0.8
0.6
0.4
280
0.2
275
-50
-40
-30
-20
-10
0
10
20
30
40
Case Temperature (deg C)
50
60
70
80
90
0.0
13
14
15
16
17
18
19
20
21
22
23
24
25
Output Power (dBm)
Data Sheet - Rev 2.2
10/2008
7
AWM6422
APPLICATION INFORMATION
Transmit Disable and Attenuator Control
The power amplifier is disabled by setting VBIAS below
+0.7 V. The step attenuator is enabled by applying a
logic high to VATTN; the PA exhibits nominal gain when
a logic low is applied to VATTN.
VCC
VCC
2.2 F
RF IN
VBIAS
100 pF
VCC
0.1 F
VATTN
VCC
12
VCC
2
3
RFIN
GND
11
4
GND
RFOUT
10
VBIAS
GND
9
5
VCC
GND
8
6
VATTN
DET
7
GND
at slug
Data Sheet - Rev 2.2
10/2008
2.2 F
RF OUT
DETOUT
4.7 K
Figure 19: Application Circuit
8
1 F
0.01 F
1
0.1 F
AWM6422
Figure 20: Land Pattern
Data Sheet - Rev 2.2
10/2008
9
AWM6422
PACKAGE OUTLINE
Figure 21: M18 Package Outline - 12 Pin 4.5 mm x 4.5 mm x 1.4 mm Surface Mount Module
10
Data Sheet - Rev 2.2
10/2008
AWM6422
NOTES
Data Sheet - Rev 2.2
10/2008
11
AWM6422
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE DESCRIPTION
COMPONENT PACKAGING
AWM6422RM18P8
-40 °C to +85 °C
RoHS-compliant 12 Pin
4.5 mm x 4.5 mm x 1.4 mm
Surface Mount Module
2,500 piece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
12
Data Sheet - Rev 2.2
10/2008