AWT6521 Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier Data Sheet - Rev 2.4 FEATURES • LTE, WCDMA/HSPA & CDMA/EVDO Applications • High Output Power AW T • +28.5 dBm or more in WCDMA (R99) 652 • +27.5 dBm or more in CDMA (RC1) • 1 High power-added efficiency • 40% in high power mode (WCDMA mode) • Low profile 5 mm x 7 mm x 1 mm package • 2 input ports, 5 output ports, all matched to 50 Ω impedance • Integrated voltage regulator • Built-in Directional Coupler • Internal DC block on IN/OUT RF ports • Low leakage in shutdown mode • ESD Protection on all pins • RoHS-compliant package, MSL-3, 260°C 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module APPLICATIONS • LTE, WCDMA/HSPA handsets and data devices operating in UMTS Bands 1, 2, 3, 4, 5, 8 and 25 • CDMA/EVDO handsets and data devices operating in Band Class 0, 1, 6 and 15 PRODUCT DESCRIPTION The AWT6521 Power Amplifier module is designed for 3G/4G handsets, smartphones, modems and modules operating in LTE, WCDMA/HSPA and CDMA/ EVDO modes. The module includes two separate InGaP HBT amplifier chains - one to support 850/900 bands, the other for 1700/1900/2100MHz bands. An innovative design allows the module to switch output among as many as 5 different frequency bands. Both the input and output RF ports are internally matched to 50 Ω. The AWT6521 offers improved efficiency and low quiescent current, and includes integrated daisy chained couplers to simplify board design and layout. High Band Combiner Network Low Band Figure 1: Block Diagram 02/2012 AWT6521 RFIN_HI 1 22 RFOUT_2100 GND 2 21 RFOUT_1700 VBATT 3 20 RFOUT_1900 VEN_HI 4 19 GND GND 5 18 CPLOUT VBAND0 6 17 V CC VBAND1 7 16 VCC VMODE 8 15 VCC VEN_LO 9 14 GND GND 10 13 RFOUT_850 RFIN_LO 11 12 RFOUT_900 Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION PIN NAME 1 RFIN_HI RF Input for 1700/1800/1900 MHz Bands 12 RFOUT_900 RF Output for 900 MHz Band 2 GND 13 RFOUT_850 RF Output for 850 MHz Band 3 VBATT Battery Voltage 14 GND Ground 4 VEN_HI Enable Voltage for High Bands 15 VCC Supply Voltage 5 GND Ground 16 VCC Supply Voltage 6 VBAND0 Low Band Select Voltage 17 VCC Supply Voltage 7 VBAND1 High Band Select Voltage 18 CPL_OUT 8 VMODE Mode Control Voltage 19 GND 9 VEN_LO Enable Voltage for Low Bands 10 GND 11 RFIN_LO Ground Ground RF input for 850/900 MHz Bands DESCRIPTION Coupler Output Port Ground 20 RFOUT_1900 RF Output for 1900 MHz Band 21 RFOUT_1700 RF Output for 1700 MHz Band 22 RFOUT_2100 RF Output for 2100 MHz Band Data Sheet - Rev 2.4 02/2012 AWT6521 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VBATT, VCC) MIN MAX UNIT 0 +5 V Control Voltages (VMODE, VBAND0/1) 0 +3.5 V Enable Voltages (VEN_HI, VEN_LO) 0 +3.5 V Input RF power (RFIN_HI, RFIN_LO) - +10 dBm -30 +150 C Storage temperature Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Data Sheet - Rev 2.4 02/2012 3 AWT6521 Table 3: Operating Ranges PARAMETER MIN TYP MAX Operating Frequency (f) 824 880 1710 1850 1920 - 849 915 1785 1915 1980 MHz Supply Voltage (VCC) +0.5 +3.3 +4.35 V Supply Voltage (VBATT) +2.9 +3.3 +4.35 V Control Voltages (VMODE1, VBAND0/1) +1.35 0 +1.8 - +3.1 +0.4 V Select High State Select Low State Enable Voltage (VEN_HI, VEN_LO) +1.35 0 +1.8 - +3.1 +0.4 V Select High State Select Low State Output Power (UMTS) (1) R99, HPM HSPA (MPR = 0), HPM LTE (MPR = 0), HPM R99, LPM HSPA (MPR = 0), LPM LTE (MPR = 0), LPM R99, HPM HSPA (MPR = 0), HPM LTE (MPR = 0), HPM R99, LPM HSPA (MPR = 0), LPM LTE (MPR = 0), LPM R99, HPM HSPA (MPR = 0), HPM LTE (MPR = 0), HPM R99, LPM HSPA (MPR = 0), LPM LTE (MPR = 0), LPM +27.9 +26.9 +26.4 +15.4 +14.4 +14.4 +28.4 +27.4 +26.9 +15.4 +14.4 +14.4 +28.2 +27.2 +26.4 +15.4 +14.4 +14.4 +28.5 +27.5 +27.0 +16.0 +15.0 +15.0 +29.0 +28.0 +27.5 +16.0 +15.0 +15.0 +28.8 +27.8 +27.0 +16.0 +15.0 +15.0 - CDMA Output Power (1) CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM +27.1 +14.4 +26.9 +14.4 +27.5 +14.4 +27.7 +15.0 +27.5 +15.0 +28.1 +15.0 - dBm -30 - +105 °C Case Temperature (TC) UNIT dBm COMMENTS UMTS Band 5, BC 0 UMTS Band 8 UMTS Band 3 & 4, BC 15 UMTS Band 2 & 25, BC 1 UMTS Band 1, BC 6 UMTS Band 1, 3, 4, 5 UMTS Band 1, 3, 4, 5 UMTS Band 1, 3, 4, 5 UMTS Band 1, 3, 4, 5 UMTS Band 1, 3, 4, 5 UMTS Band 1, 3, 4, 5 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 Band Class 6, 15 Band Class 0 Band Class 1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operations at 3.1 V or 105 8C, POUT is derated by 0.6 dB. 4 Data Sheet - Rev 2.4 02/2012 AWT6521 Table 4: Electrical Specifications - Band 1 (2100 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT 25 10 27.5 12.5 31 16 ACLR1 at 5 MHz offset (1) - -41 -42 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) COMMENTS POUT VMODE dB +28.5 dBm +16 dBm 0V 1.8 V -36.5 -37 dBc +28.5 dBm +16 dBm 0V 1.8 V -55 <-60 -48 -48 dBc +28.5 dBm +16 dBm 0V 1.8 V 35 - 40 7 - % +28.5 dBm +16 dBm 0V 1.8 V Mode Control Current - <0.06 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.07 0.15 mA through VENABLE H or L BAND Control Current - <0.01 0.06 mA through VBAND0 and VBAND1 pins Quiescent Current - 30 - mA VMODE = 1.8 V BATT Current - 45 - mA through VBATT pin, VMODE = +1.8 V Noise in Receive Band (2) - -135 -138 - dBm/Hz POUT < +28.25 dBm, VMODE = 0 V POUT < +16 dBm, VMODE = +1.8 V Harmonics 2fO 3fO, 4fO - -42 -50 -30 -35 dBc Coupling Factor - 27.5 - dB Input Impedance - - 2:1 VSWR Gain Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc POUT < 28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range CDMA2000 (RC-1) Waveform Adjacent Channel Power at + 1.25 MHz offset Primary Channel BW = 1.23 MHz - -51 -51 -46.5 -47 dBc Alternate Channel Power at + 1.98 MHz offset Primary Channel BW = 1.23 MHz - -57 -59 -54 -54 dBc POUT VMODE +27.7 dBm +15 dBm 0V 1.8 V +27.7 dBm +15 dBm 0V 1.8 V Notes: (1) ACLR and Efficiency measured at 1950 MHz. (2) Noise measured at 2110 to 2170 MHz. Data Sheet - Rev 2.4 02/2012 5 AWT6521 Table 5: Electrical Specifications - Band 1 (2100 MHz) LTE Operation (RB = 12, Start = 0, QPSK) (TC = +25 8C, VBATT = VCC = +3.3 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain - 27 13 - UTRA ACLR1 - -42 -42 UTRA ACLR2 - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 dB +27 dBm +15 dBm 0V 1.8 V - dBc +27 dBm +15 dBm 0V 1.8 V -44 -44 - dBc +27 dBm +15 dBm 0V 1.8 V 34 8 - % +27 dBm +15 dBm 0V 1.8 V - - <-70 dBc POUT < 27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 1950 MHz. 6 COMMENTS Data Sheet - Rev 2.4 02/2012 AWT6521 Table 6: Electrical Specifications - Band 2 (1900 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX Gain 25.5 10.5 28 14.5 31 17 ACLR1 at 5 MHz offset (1) - -41 -42 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) UNIT COMMENTS POUT VMODE dB +29 dBm +16 dBm 0V 1.8 V -36.5 -37 dBc +29 dBm +16 dBm 0V 1.8 V -53 -60 -48 -48 dBc +29 dBm +16 dBm 0V 1.8 V 35 - 39 7 - % +29 dBm +16 dBm 0V 1.8 V Mode Control Current - <0.06 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.07 0.15 mA through VENABLE H or L BAND Control Current - <0.03 0.1 mA through VBAND1 pin Quiescent Current - 30 - mA VMODE = 1.8 V BATT Current - 45 - mA through VBATT pin, VMODE = +1.8 V Noise in Receive Band (2) - -135 -138 - dBm/Hz POUT < +29 dBm, VMODE = 0 V POUT < +16 dBm, VMODE = +1.8 V Harmonics 2fO 3fO, 4fO - -40 -46 -35 -35 dBc Coupling Factor - 28 - dB Input Impedance - - 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -70 dBc POUT < 29 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range CDMA2000 (RC-1) Waveform Adjacent Channel Power at + 1.25 MHz offset Primary Channel BW = 1.23 MHz - -52 -51 -46.5 -47 dBc Alternate Channel Power (1) at + 1.98 MHz offset Primary Channel BW = 1.23 MHz - -56 -59 -54 -54 dBc POUT VMODE +28.1 dBm +15 dBm 0V 1.8 V +28.1 dBm +15 dBm 0V 1.8 V (1) Notes: (1) ACLR and Efficiency measured at 1880 MHz. (2) Noise measured at 1930 to 1990 MHz. Data Sheet - Rev 2.4 02/2012 7 AWT6521 Table 7: Electrical Specifications - Band 2 & 25 (1900 MHz) LTE Operation (RB = 12, Start = 0, QPSK) (TC = +25 8C, VBATT = VCC = +3.3 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain - 27.5 14.5 - UTRA ACLR1 - -41 -42 UTRA ACLR2 - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 dB +27.5 dBm +15 dBm 0V 1.8 V - dBc +27.5 dBm +15 dBm 0V 1.8 V -44 -44 - dBc +27.5 dBm +15 dBm 0V 1.8 V 33 8 - % +27.5 dBm +15 dBm 0V 1.8 V - - <-70 dBc POUT < 27.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 1880 MHz. 8 COMMENTS Data Sheet - Rev 2.4 02/2012 AWT6521 Table 8: Electrical Specifications - Band 3 & 4 (1700 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX Gain 24.5 10.5 27 13.5 30 16 ACLR1 at 5 MHz offset (1) - -42 -43 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) (without DC/DC Converter) UNIT COMMENTS POUT VMODE dB +28.5 dBm +16 dBm 0V 1.8 V -36.5 -37 dBc +28.5 dBm +16 dBm 0V 1.8 V -55 -60 -48 -48 dBc +28.5 dBm +16 dBm 0V 1.8 V 36 - 41 7 - % +28.5 dBm +16 dBm 0V 1.8 V Mode Control Current - <0.06 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.07 0.15 mA through VENABLE H or L BAND Control Current - <0.03 0.1 mA through VBAND0 pin Quiescent Current - 34 - mA VMODE = 1.8 V BATT Current - 45 - mA through VBATT pin, VMODE = +1.8 V Noise in Receive Band - -134 -142 - dBm/Hz Harmonics 2fO 3fO, 4fO - -42 -55 -30 -35 dBc Coupling Factor - 27.5 - dB Input Impedance - 2:1 - VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure 1574.4 - 1576.4 MHz 2110 - 2155 MHz POUT < +28.5 dBm - - -70 dBc POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range CDMA2000 (RC-1) Waveform Adjacent Channel Power at + 1.25 MHz offset Primary Channel BW = 1.23 MHz - -52 -51 -46.5 -47 dBc Alternate Channel Power (1) at + 1.98 MHz offset Primary Channel BW = 1.23 MHz - -57 -59 -54 -54 dBc POUT VMODE +27.7 dBm +15 dBm 0V 1.8 V +27.7 dBm +15 dBm 0V 1.8 V (1) Notes: (1) ACLR and Efficiency measured at 1747.5 MHz. Data Sheet - Rev 2.4 02/2012 9 AWT6521 Table 9: Electrical Specifications - Band 3 & 4 (1700 MHz) LTE Operation (RB = 12, Start = 0, QPSK) (TC = +25 8C, VBATT = VCC = +3.3 V, VENABLE = +1.8 V, 0 Ω system) PARAMETER MIN TYP MAX UNIT Gain - 27.5 13.5 - UTRA ACLR1 - -41 -42 UTRA ACLR2 - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 dB +27 dBm +15 dBm 0V 1.8 V - dBc +27 dBm +15 dBm 0V 1.8 V -44 -44 - dBc +27 dBm +15 dBm 0V 1.8 V 34 8 - % +27 dBm +15 dBm 0V 1.8 V - - <-70 dBc POUT < 27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 1747.5 MHz. 10 COMMENTS Data Sheet - Rev 2.4 02/2012 AWT6521 Table 10: Electrical Specifications - Band 5 (850 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V) PARAMETER MIN TYP MAX UNIT Gain 25.5 9 28 13 31 16 ACLR1 at 5 MHz offset (1) - -41 -44 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) COMMENTS POUT VMODE dB +28.5 dBm +16 dBm 0V 1.8 V -37 -37 dBc +28.5 dBm +16 dBm 0V 1.8 V -57 -60 -48 -48 dBc +28.5 dBm +16 dBm 0V 1.8 V 35 - 40 8 - % +28.5 dBm +16 dBm 0V 1.8 V Mode Control Current - <0.06 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.07 0.15 mA through VENABLE H or L BAND Control Current - <0.03 0.1 mA through VBAND0 or VBAND1 pins Quiescent Current - 32 - mA VMODE = 1.8 V BATT Current - 21 - mA through VBATT pin, VMODE = +1.8 V Noise in Receive Band (2) - -136 -138 - dBm/Hz POUT < +28.5 dBm, VMODE = 0 V POUT < +16 dBm, VMODE = +1.8 V Harmonics 2fO 3fO, 4fO - -44 -50 -35 -35 dBc Coupling Factor - 26.5 - dB Input Impedance - - 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT < +28.5 dBm - - -70 dBc POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range CDMA2000 (RC-1) Waveform Adjacent Channel Power at + 1.25 MHz offset Primary Channel BW = 1.23 MHz - -51 -51 -46.5 -47 dBc Alternate Channel Power (1) at + 1.98 MHz offset Primary Channel BW = 1.23 MHz - -60 -63 -57 -57 dBc POUT VMODE +27.5 dBm +15 dBm 0V 1.8 V +27.5 dBm +15 dBm 0V 1.8 V (1) Notes: (1) ACLR and Efficiency measured at 836.5 MHz. (2) Noise measured at 869 to 894 MHz. Data Sheet - Rev 2.4 02/2012 11 AWT6521 Table 11: Electrical Specifications - Band 5 (850 MHz) LTE Operation (MPR = 0 dB waveform, RB = 12, 10 MHz QPSK) (TC = +25 8C, VBATT = VCC = +3.3 V, VENABLE = +1.8 V, 0 Ω system) PARAMETER MIN TYP MAX UNIT Gain - 27 11 - UTRA ACLR1 - -41 -42 UTRA ACLR2 - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 dB +27 dBm +15 dBm 0V 1.8 V - dBc +27 dBm +15 dBm 0V 1.8 V -45 -46 - dBc +27 dBm +15 dBm 0V 1.8 V 34 8 - % +27 dBm +15 dBm 0V 1.8 V - - -70 dBc POUT < 27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 836.5 MHz. 12 COMMENTS Data Sheet - Rev 2.4 02/2012 AWT6521 Table 12: Electrical Specifications - Band 8 (900 MHz) WCDMA Operation (R99 waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V) PARAMETER MIN TYP MAX UNIT Gain 25.5 8.5 27.5 11 31 15 ACLR1 at 5 MHz offset (1) - -42 -43 ACLR2 at 10 MHz offset (1) - Power-Added Efficiency (1) COMMENTS POUT VMODE dB +28.8 dBm +16 dBm 0V 1.8 V -37 -37 dBc +28.8 dBm +16 dBm 0V 1.8 V -56 -60 -48 -48 dBc +28.8 dBm +16 dBm 0V 1.8 V 35 - 40 8 - % +28.8 dBm +16 dBm 0V 1.8 V Mode Control Current - <0.06 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.07 0.15 mA through VENABLE H or L BAND Control Current - <0.03 0.1 mA through VBAND0 or VBAND1 pins Quiescent Current - 33 - mA VMODE = 1.8 V BATT Current - 23 - mA through VBATT pin, VMODE = +1.8 V Noise in Receive Band (2) - -136 -137 - dBm/Hz POUT = +28.8 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +1.8 V Harmonics 2fO 3fO, 4fO - -42 -50 -30 -35 dBc Coupling Factor - 27.0 - dB Leakage Current (Total) - <6 12 µA Input Impedance - - 2:1 VSWR Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT < +28.8 dBm VBATT = +4.5 V, VCC = +4.5 V, Shutdown Mode (All VBATT & VCC Pins) - - -70 dBc POUT < +28.8 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 897.5 MHz. (2) Noise measured at 925 to 960 MHz. Data Sheet - Rev 2.4 02/2012 13 AWT6521 Table 13: Electrical Specifications - Band 8 (900 MHz) LTE Operation (MPR = 0 dB waveform, RB = 12, 10 MHz QPSK) (TC = +25 8C, VBATT = VCC = +3.3 V, VENABLE = +1.8 V, 0 Ω system) PARAMETER MIN TYP MAX UNIT Gain - 27.5 11 - UTRA ACLR1 - -41 -42 UTRA ACLR2 - Power-Added Efficiency (1) - Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT VMODE1 dB +27 dBm +15 dBm 0V 1.8 V - dBc +27 dBm +15 dBm 0V 1.8 V -45 -46 - dBc +27 dBm +15 dBm 0V 1.8 V 34 8 - % +27 dBm +15 dBm 0V 1.8 V - - -70 dBc POUT < 27 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 897.5 MHz. 14 COMMENTS Data Sheet - Rev 2.4 02/2012 AWT6521 LOGIC PROGRAMMING Table 14: Logic Interface Specifications MODE OF OPERATION VEN_HI VEN_LO VBAND0 VBAND1 VMODE UMTS Band 1, CDMA BC 6 High Low Low Low X UMTS Band 2 & 25, CDMA BC 1 High Low Low High X UMTS Band 3 & 4, CDMA BC 15 High Low High Low X UMTS Band 5, CDMA BC 0 Low High High High X UMTS Band 8 Low High Low Low X Standby Mode Low Low X X X Shutdown Mode Low Low Low Low X High Power Mode (HPM) X X X X Low Low Power Mode (LPM) X X X X High APPLICATION INFORMATION 1 2 BATT 3 C1 68pF 4 5 6 7 8 9 10 11 RFIN_HI RFOUT_2100 GND RFOUT_1700 VBATT RFOUT_1900 VEN_HI GND GND CPLOUT VBAND0 VCC VBAND1 V CC VMODE VCC VEN_LO GND GND RFOUT_850 RFIN_LO RFOUT_900 22 21 20 19 18 BATT 17 16 15 14 C2 C3 C2 68pF .1 uF 2.2u F 13 12 GND SLUG Figure 3 : Evaluation Board Schematic Data Sheet - Rev 2.4 02/2012 15 AWT6521 PACKAGE OUTLINE Figure 4: Package Outline - 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module ANADIGICS logo Pin 1 Identifier Part Number Date Code YY= Year WW= Work Week AWT6521R LLLLLNN YYWWCC Lot Number Country Code (CC) Figure 5: Branding Specification 16 Data Sheet - Rev 2.4 02/2012 AWT6521 PCB AND STENCIL DESIGN GUIDELINE Figure 6: Recommended PCB Layout Information Data Sheet - Rev 2.4 02/2012 17 AWT6521 NOTES: (1) Material: 3000 (Carbon Filled Polycarbonate) 100% Recyclable. Figure 7: Carrier Tape Figure 8: Reel 18 Data Sheet - Rev 2.4 02/2012 AWT6521 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6521RM48P8 -30 C to + 105 C ROHS Compliant 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel AWT6521RM48P9 -30 C to + 105 C ROHS Compliant 22 Pin 5 mm x 7 mm x 1 mm Surface Mount Module Partial Tape and Reel ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 19 Data Sheet - Rev 2.4 02/2012