ALT6526 Multi-Band LTE/CDMA/WCDMA/HSPA Power Amplifier DATA SHEET - Rev 2.5 FEATURES • • • • • • • • • • • LTE, WCDMA/HSPA & CDMA/EVDO Applications High Output Power • ≥ +27.3 dBm in LTE • ≥ +28.6 dBm in WCDMA (R99) • ≥ +27.5 dBm in CDMA (RC1) High Efficiency • 40% in high power mode (WCDMA mode) Low profile 5 mm x 7 mm x 0.9 mm package 2 input ports, 5 output ports, all matched to 50 Ω impedance Integrated voltage regulator Built-in Directional Coupler Internal DC block on IN/OUT RF ports Low leakage in shutdown mode ESD Protection on all pins RoHS-compliant package, MSL-3, 260°C ALT 652 6 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module APPLICATIONS • LTE, WCDMA/HSPA handsets and data devices operating in UMTS Bands 1, 2, 3, 4, 5, 8, 9,10, 18, 19, 20, 25, and 26 • CDMA/EV-DO handsets and data devices operating in Band Class 0, 1, 4, 6, 8, 10, 14G and 15 PRODUCT DESCRIPTION The ALT6526 Power Amplifier module is designed for 3G/4G handsets, smartphones, modems and modules operating in LTE, WCDMA/HSPA and CDMA/EVDO modes. The module includes separate InGaP HBT amplifier chains - one to support 850/900 bands, the other for 1700/1900/2100MHz bands. An innovative design allows the module to switch output among as many as 5 different frequency bands. Both the input and output RF ports are internally matched to 50 Ω. The ALT6526 offers improved efficiency and low quiescent current, and includes integrated daisy chained couplers to simplify board design and layout. Figure 1: Block Diagram 07/2013 ALT6526 RFIN_HI 1 22 RFOUT_2100 GND 2 21 RFOUT_1700 VBATT 3 20 RFOUT_1900 V CC1 4 19 GND VEN_HI 5 18 CPLOUT VBAND0 6 17 V CC VBAND1 7 16 VCC VMODE 8 15 VCC VEN_LO 9 14 GND GND 10 13 RFOUT_850 RFIN_LO 11 12 RFOUT_900 Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME 1 RFIN_HI 2 PIN NAME RF Input for 1700/1800/1900 MHz Bands 12 RFOUT_900 RF Output for 900 MHz Band GND Ground 13 RFOUT_850 RF Output for 850 MHz Band 3 VBATT Battery Voltage 14 GND 4 VCC1 Supply Voltage 15 VCC Supply Voltage 5 VEN_HI Enable Voltage for High Bands 16 VCC Supply Voltage 6 VBAND0 Low Band Select Voltage 17 VCC Supply Voltage 7 VBAND1 High Band Select Voltage 18 CPL_OUT 8 VMODE Mode Control Voltage 19 GND 9 VEN_LO Enable Voltage for Low Bands 20 RFOUT_1900 RF Output for 1900 MHz Band 10 GND Grounds 21 RFOUT_1700 RF Output for 1700 MHz Band 11 RFIN_LO RF input for 850/900 MHz Bands 22 RFOUT_2100 RF Output for 2100 MHz Band 2 DESCRIPTION DATA SHEET - Rev 2.5 07/2013 DESCRIPTION Ground Coupler Output Port Ground ALT6526 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VBATT, VCC, VCC1) 0 +5 V Control Voltages (VMODE, VBAND0/1) 0 +3.5 V Enable Voltages (VEN_HI, VEN_LO) 0 +3.5 V Input RF power (RFIN_HI, RFIN_LO) - +10 dBm -40 +150 C Storage temperature Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: DC Operating Parameters PARAMETER MIN TYP MAX UNIT Supply Voltage (VCC & VCC1) +0.7 +3.3 +4.35 V Supply Voltage (VBATT) +2.9 +3.3 +4.35 V Control Voltages (VMODE, VBAND0/1) +1.35 0 +1.8 - +3.1 +0.4 V Select High State Select Low State Enable Voltage (VEN_HI, VEN_LO) +1.35 0 +1.8 - +3.1 +0.4 V Select High State Select Low State Mode Control Current - <0.1 0.12 mA through VMODE pin, VMODE = +1.8 V Enable Current - <0.1 0.12 mA through VEN_HI, VEN_LO BAND Control Current - <0.1 0.12 mA through VBAND0 or VBAND1 pins BATT Current - 2.3 5 mA through VBATT pin, VMODE = +1.8 V Leakage Current (total) - <5 11 µA VBATT = +4.5 V, VCC = +4.5 V, Shutdown Mode (All VBATT & VCC Pins) 3 DATA SHEET - Rev 2.5 07/2013 COMMENTS ALT6526 Table 4: RF Operating Ranges PARAMETER MIN TYP MAX Operating Frequency (f) 816 814 880 1710 1850 1920 - 849 862 915 1785 1915 1980 Output Power (UMTS) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM (3) R99, HPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM (3) LTE (MPR = 0), HPM (3) LTE (MPR = 0), LPM (3) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM (3) R99, LPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM (3) R99, HPM HSPA (MPR = 0), HPM (2) LTE (MPR = 0), HPM R99, LPM HSPA (MPR = 0), LPM (2) LTE (MPR = 0), LPM +28.0 (1) +26.9 (1) +26.8 (1) +10.0 (1) +9.0 (1) +9.0 (1) +26.7 +9.0 +28.4 (1) +27.3 (1) +27.1 (1) +10.0 (1) +9.0 (1) +9.0 (1) +28.1 (1) +27.0 (1) +26.9 (1) +10.0 (1) +9.0 (1) +9.0 (1) +28.6 +27.5 +27.4 +10.6 +9.6 +9.6 +27.3 +9.6 +29.0 +27.9 +27.7 +10.6 +9.6 +9.6 +28.7 +27.6 +27.5 +10.6 +9.6 +9.6 - CDMA Output Power CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM CDMA2000 (RC1), HPM CDMA2000 (RC1), LPM +27.1 (1) +9.0 (1) +26.9 (1) +9.0 (1) +27.5 (1) +9.0 (1) +27.7 +9.6 +27.5 +9.6 +28.1 +9.6 - dBm -40 - +105 C Case Temperature (TC) UNIT COMMENTS MHz UMTS Band 5, 19, BC 0, BC 10 UMTS Band 18, 20, 26 UMTS Band 8 UMTS Band 3, 4, 9, 10, BC 4, 8, 15 UMTS Band 2 & 25, BC 1 & 14G UMTS Band 1, BC 6 dBm UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 1, 3, 4, 5, 9, 10, 19 UMTS Band 18, 20, 26 UMTS Band 18, 20, 26 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 2, 25 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 UMTS Band 8 Band Class 4, 6, 8, 15 Band Class 0, 10 Band Class 1, 14G The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operations at 3.2 V or 105 8C, POUT is derated by 0.6 dB. (2) 3GPP TS 34.121-1, Rec .8 Table C 11.1.3 subtest 1. (3) LTE waveform characteristics: up to 20 MHz BW, QPSK, RB = 18. 4 DATA SHEET - Rev 2.5 07/2013 ALT6526 Table 4a: Electrical Specifications - Band 1 (2100 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT 25 9 28.5 19 13 32.5 16 E-UTRA at ± 10 MHz offset - -38 -41 -40 ACLR1 at ± 7.5 MHz offset (1) - ACLR2 at ± 12 MHz offset POUT VCC VMODE dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -39 -40 -41 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V - -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V 30.5 - 36 3.5 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0V +1.8 V Quiescent Current - 40 - mA Noise in Receive Band - -135 - dBm/Hz 2110 - 2170 MHz GPS Noise - -137 - dBm/Hz POUT ≤ 27.4 dBm ISM Noise - -145 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band GPS Band ISM Band - G - 2.8 G - 2.4 G-8 - dB Harmonics 2fO 3fO, 4fO - -42 -50 -30 -35 dBc Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc 8:1 - - VSWR - 27.5 - dB Gain Efficiency (1) Load mismatch stress with no permanent degradation or failure Coupling factor 5 COMMENTS DATA SHEET - Rev 2.5 07/2013 through VCC1 + VCC pins, VMODE = 1.8 V G = In-band Gain See note 2. Applies over full operating range ALT6526 Table 4b: Electrical Specifications - Band 1 (2100 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 ACLR2 at 10 MHz offset - -55 <-60 35 - 41 4 Efficiency (1) COMMENTS POUT VMODE dBc +28.6 dBm +10.6 dBm 0V 1.8 V -48 -48 dBc +28.6 dBm +10.6 dBm 0V 1.8 V - % +28.6 dBm +10.6 dBm 0V 1.8 V Table 4c: Electrical Specifications - Band Class 6 (2100 MHz) CDMA 2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = +1.8 V, VBAND0 = VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz - -51 -51 -46.5 -46.5 Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz - -57 <-60 -54 -54 COMMENTS POUT VMODE dBc +27.7 dBm +9.6 dBm 0V 1.8 V dBc +27.7 dBm +9.6 dBm 0V 1.8 V Notes (Applicable to Tables 4a, 4b and 4c): (1) ACLR and Efficiency measured at 1950 MHz. (2) POUT < +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. 6 DATA SHEET - Rev 2.5 07/2013 ALT6526 Table 5a: Electrical Specifications - Band 2/25 (1900 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT Gain 25.5 10 28.5 20 13.5 32 16.5 E-UTRA at ± 10 MHz offset - -38 -42 -40 ACLR1 at ± 7.5 MHz offset (1) - ACLR2 at ± 12 MHz offset COMMENTS POUT VCC VMODE dB +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -34 -34 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -39 -43 -41 -36 -36 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V - -60 -60 -60 -40 -40 dBc +27.7 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V 30.5 - 36 3.5 - % +27.7 dBm +9.6 dBm 3.3 V 3.3 V 0V +1.8 V Quiescent Current - 40 - mA Noise in Receive Band - -135 - dBm/Hz 1930 - 1990 MHz GPS Noise - -137 - dBm/Hz POUT ≤ 27.7 dBm ISM Noise - -149 - dBm/Hz POUT ≤ 27.7 dBm Out of Band Gain Rx Band GPS Band ISM Band - G - 0.5 G - 0.8 G-8 - dB Harmonics 2fO 3fO, 4fO - -40 -46 -35 -35 dBc Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc 8:1 - - VSWR - 29 - dB Efficiency (1) Load mismatch stress with no permanent degradation or failure Coupling factor 7 DATA SHEET - Rev 2.5 07/2013 through VCC1 + VCC pins, VMODE = 1.8 V G = In-band Gain See note 2 Applies over full operating range ALT6526 Table 5b: Electrical Specifications - Band 2/25 (1900 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 ACLR2 at 10 MHz offset - -53 <-60 35 - 40 4 Efficiency (1) COMMENTS POUT VMODE dBc +29.0 dBm +10.6 dBm 0V 1.8 V -48 -48 dBc +29.0 dBm +10.6 dBm 0V 1.8 V - % +29.0 dBm +10.6 dBm 0V 1.8 V Table 5c: Electrical Specifications - Band Class 1 (1900 MHz) CDMA2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = +1.8 V, VBAND0 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz - -52 -51 -46.5 -46.5 Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz - -57 <-60 -54 -54 COMMENTS POUT VMODE dBc +28.1 dBm +9.6 dBm 0V 1.8 V dBc +28.1 dBm +9.6 dBm 0V 1.8 V Notes (Applicable to Tables 5a, 5b and 5c): (1) ACLR and Efficiency measured at 1882.5 MHz. (2) Pout ≤ 27.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR ≤ 10:1. Applies over all operating conditions 8 DATA SHEET - Rev 2.5 07/2013 ALT6526 Table 6a: Electrical Specifications - Band 3/4 (1700 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT 26 9 28.5 18 13 32.5 16 E-UTRA at ± 10 MHz offset - -38 -39 -40 ACLR1 at ± 7.5 MHz offset (1) - ACLR2 at ± 12 MHz offset POUT VCC VMODE dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -39 -40 -41 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V - -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V 30.5 - 36 3.5 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0V +1.8 V Quiescent Current - 40 - mA through VCC1 + VCC2 pins, VMODE = 1.8 V Noise in Receive Band - -135 -142 - dBm/Hz GPS Noise - -134 - dBm/Hz POUT ≤ 27.4 dBm ISM Noise - -149 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band (B3) Rx Band (B4) GPS Band ISM Band - G G-2 G-1 G - 10 - dB G = In-band Gain Harmonics 2fO 3fO, 4fO - -42 -55 -30 -35 dBc POUT ≤ +27.4 dBm Input Impedance - 2:1 - VSWR Suprious Output Level (all spurious outputs) - - -70 dBc 8:1 - - VSWR - 28.5 - dB Gain Efficiency (1) Load mismatch stress with no permanent degradation or failure Coupling factor 9 COMMENTS DATA SHEET - Rev 2.5 07/2013 1805 - 1880 MHz 2110 - 2155 MHz See note 2. Applies over full operating range ALT6526 Table 6b: Electrical Specifications - Band 3/4 (1700 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 ACLR2 at 10 MHz offset - -55 <-60 35 - 41 4 Efficiency (1) COMMENTS POUT VMODE dBc +28.6 dBm +10.6 dBm 0V 1.8 V -48 -48 dBc +28.6 dBm +10.6 dBm 0V 1.8 V - % +28.6 dBm +10.6 dBm 0V 1.8 V Table 6c: Electrical Specifications - Band Class 8 (1700 MHz) CDMA Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND0 = +1.8 V, VBAND1 = 0 V, VEN_LO = 0 V) PARAMETER MIN TYP MAX UNIT Adjacent Channel Power (1) at ± 1.25 MHz offset Primary Channel BW = 1.23 MHz - -52 -52 -46.5 -46.5 Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz - -57 <-60 -54 -54 COMMENTS POUT VMODE dBc +27.7 dBm +9.6 dBm 0V 1.8 V dBc +27.7 dBm +9.6 dBm 0V 1.8 V Notes (Applicable to Tables 6a, 6b and 6c): (1) ACLR and Efficiency measured at 1747.5 MHz. (2) POUT < +28.6 dBm; In-band load VSWR < 5:1; Out-of-band load VSWR < 10:1; Applies over all operating conditions. 10 DATA SHEET - Rev 2.5 07/2013 ALT6526 Table 7a: Electrical Specifications - Band 5 (850 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) PARAMETER MIN TYP MAX UNIT Gain 25.5 10 28 17 13 31.5 16.5 E-UTRA at ± 10 MHz offset - -38 -41 -40 ACLR1 at ± 7.5 MHz offset (1) - ACLR2 at ± 12 MHz offset COMMENTS POUT VCC VMODE dB +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -34 -34 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -39 -42 -40 -36 -36 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V - -60 -60 -60 -40 -40 dBc +27.4 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V 30.5 - 35 4 - % +27.4 dBm +9.6 dBm 3.3 V 3.3 V 0V +1.8 V Quiescent Current - 35 - mA through VCC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -132 -136 - dBm/Hz GPS Noise - -158 - dBm/Hz POUT ≤ 27.4 dBm ISM Noise - -160 - dBm/Hz POUT ≤ 27.4 dBm Out of Band Gain Rx Band GPS Band ISM Band - G - 0.7 G - 40 G - 50 - dB G = In-band Gain Harmonics 2fO 3fO, 4fO - -44 -50 -35 -35 dBc POUT ≤ +27.4 dBm Input Impedance - 2:1 - VSWR Suprious Output Level (all spurious outputs) - - -70 dBc 8:1 - - VSWR - 27.5 - dB Efficiency (1) Load mismatch stress with no permanent degradation or failure Coupling factor 11 DATA SHEET - Rev 2.5 07/2013 741 - 821 MHz (2) 862 - 894 MHz See note 3. Applies over full operating range ALT6526 Table 7b: Electrical Specifications - Band 5 (850 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) PARAMETER MIN TYP MAX UNIT ACLR1 at 5 MHz offset (1) - -41 -41 -37 -37 ACLR2 at 10 MHz offset - -57 <-60 34 - 39 4 Efficiency (1) COMMENTS POUT VMODE dBc +28.6 dBm +10.6 dBm 0V 1.8 V -48 -48 dBc +28.6 dBm +10.6 dBm 0V 1.8 V - % +28.6 dBm +10.6 dBm 0V 1.8 V Table 7c: Electrical Specifications - Band Class 0/10 (850 MHz) CDMA2000 Operation (RC-1 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = 0 V, VBAND1 = VBAND0 = +1.8 V, VEN_LO = 1.8 V ) PARAMETER MIN TYP MAX UNIT Adjacent Channel Power (1) at ± 885KHz offset Primary Channel BW = 1.23 MHz - -51 -50 -46.5 -46.5 Alternate Channel Power (1) at ± 1.98 MHz offset Primary Channel BW = 1.23 MHz - -60 <-63 -57 -57 COMMENTS POUT VMODE dBc +27.5 dBm +9.6 dBm 0V 1.8 V dBc +27.5 dBm +9.6 dBm 0V 1.8 V Notes (Applicable to Tables 7a, 7b and 7c): (1) ACLR and Efficiency measured at 833 MHz. (2) TS36.101, Table 7.3.1-2 (3) POUT < +28.6 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. 12 DATA SHEET - Rev 2.5 07/2013 ALT6526 Table 8a: Electrical Specifications - Band 8 (900 MHz) LTE Operation (RB = 12, START = 0, QPSK) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V) PARAMETER MIN TYP MAX UNIT Gain 25.5 9.5 28 17 12.5 31.5 16 E-UTRA at ± 10 MHz offset - -38 -39 -39 ACLR1 at ± 7.5 MHz offset (1) - ACLR2 at ± 12 MHz offset COMMENTS POUT VCC VMODE dB +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -34 -34 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V -39 -40 -41 -36 -36 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V - -60 -60 -60 -40 -40 dBc +27.5 dBm +3 dBm +9.6 dBm 3.3 V 0.7 V 3.3 V 0V 0V +1.8 V 30.5 - 35 4 - % +27.5 dBm +9.6 dBm 3.3 V 3.3 V 0V +1.8 V Quiescent Current - 35 - mA through VCC1 + VCC pins, VMODE = 1.8 V Noise in Receive Band - -136 - dBm/Hz 925 - 960 MHz GPS Noise - -160 - dBm/Hz POUT ≤ 27.5 dBm ISM Noise - -160 - dBm/Hz POUT ≤ 27.5 dBm Out of Band Gain Rx Band GPS Band ISM Band - G - 0.5 G - 30 G - 50 - dB G = In-band Gain Harmonics 2fO 3fO, 4fO - -42 -50 -30 -35 dBc POUT ≤ +27.5 dBm Input Impedance - - 2:1 VSWR Suprious Output Level (all spurious outputs) - - -70 dBc 8:1 - - VSWR - 27.5 - dB Efficiency (1) Load mismatch stress with no permanent degradation or failure Coupling factor 13 DATA SHEET - Rev 2.5 07/2013 See note 2. Applies over full operating range ALT6526 Table 8b: Electrical Specifications - Band 8 (900 MHz) WCDMA Operation (R99 Waveform) (+25 8C, VBATT = VCC = +3.3 V, VEN_HI = VBAND1 = VBAND0 = 0 V, VEN_LO = 1.8 V) PARAMETER MIN TYP MAX UNIT ACLR1 at 5 MHz offset (1) - -41 -40 -37 -37 ACLR2 at 10 MHz offset - -56 <-60 34 - 39 4 Efficiency (1) COMMENTS POUT VMODE dBc +28.7 dBm +9.6 dBm 0V 1.8 V -48 -48 dBc +28.7 dBm +9.6 dBm 0V 1.8 V - % +28.7 dBm +9.6 dBm 0V 1.8 V Notes (Applicable to Tables 8a and 8b): (1) ACLR and Efficiency measured at 897.5 MHz. (2) POUT < +28.7 dBm, In-band load VSWR < 5:1, Out-of-band load VSWR < 10:1. Applies over all operating conditions. 14 DATA SHEET - Rev 2.5 07/2013 ALT6526 LOGIC PROGRAMMING Table 9: Logic Interface Specifications MODE OF OPERATION VEN_HI VEN_LO VBAND0 VBAND1 VMODE UMTS Band 1, CDMA BC 6 High Low Low Low X UMTS Band 2 & 25 CDMA BC 1, 6, 14G High Low Low High X UMTS Band 3, 4, 9, 10 CDMA BC 4, 8, 15 High Low High Low X UMTS Band 5, 18, 19, 20, 26 BC 0, 10 Low High High High X UMTS Band 8 Low High Low Low X Standby Mode Low Low X X X Shutdown Mode Low Low Low Low X High Power Mode (HPM) X X X X Low Low Power Mode (LPM) X X X X High APPLICATION INFORMATION 2.2µF 0.01µF 1 2 VBATT VCC1 2.2µF C7 C6 C5 68pF C4 3 RFIN_HI RFOUT_2100 GND RFOUT_1700 VBATT RFOUT_1900 4 VCC1 5 VEN_HI 6 VBAND0 VCC VBAND1 V CC VMODE VCC 7 8 9 10 11 GND CPLOUT VEN_LO GND GND RFOUT_850 RFIN_LO RFOUT_900 22 21 20 19 18 16 15 14 13 12 GND SLUG Figure 3: Evaluation Board 15 VCC 17 DATA SHEET - Rev 2.5 07/2013 C1 C2 68pF 0.01µF C3 2.2uF ALT6526 PACKAGE OUTLINE Figure 4: Package Outline - 22 Pin 5 mm x 7 mm x 0.9 mm Surface Mount Module ANADIGICS logo Pin 1 Identifier Part Number Date Code YY= Year WW= Work Week ALT6526 LLLLLNN YYWWCC Lot Number Country Code (CC) Figure 5: Branding Specification 16 DATA SHEET - Rev 2.5 07/2013 ALT6526 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6526P8 -40 oC to +105 oC RoHS Compliant 22 Pin 5 mm x 7 mm x 0.9 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module ALT6526P9 -40 oC to +105 oC RoHS Compliant 22 Pin 5 mm x 7 mm x 0.9 mm Partial Tape and Reel Surface Mount Module COMPONENT PACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 17 DATA SHEET - Rev 2.5 07/2013