ALT6707 HELP4 UMTS2600 (Band 7) WCDMA/LTE Linear PAM TM Data Sheet - Rev 2.3 FEATURES • HSPA, LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.7 dBm • 29 % @ POUT = +17 dBm • 19 % @ POUT = +13.5 dBm • 21 % @ POUT = +7.0 dBm • 13 % @ POUT = +3.5 dBm ALT6707 • Low Quiescent Current: <4 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port • Internal DC Blocks on IN/OUT RF ports • Optimized for a 50 Ω System • 1.8V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Band 7 WCDMA/HSPA Wireless Devices • Band 7 LTE Wireless Devices PRODUCT DESCRIPTION GND at Slug (pad) The ALT6707 HELP4TM PA is a 4th generation HELPTM product for LTE and WCDMA devices operating in UMTS2600 (Band 7). This PA incorporates ANADIGICS’ HELP4TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown mode with low leakage current increase handset talk and standby time. A “daisy chainable” directional coupler is integrated in the module, thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 09/2012 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL Bias Control Voltage Regulation Figure 1: Block Diagram ALT6707 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT Battery Voltage 2 RFIN RF Input 3 VMODE2 Mode Control Voltage 2 4 VMODE1 Mode Control Voltage 1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN Coupler Input 9 RFOUT RF Output 10 VCC PA Enable Voltage Coupler Output Supply Voltage Data Sheet - Rev 2.3 09/2012 VCC ALT6707 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Battery Voltage (VBATT) 0 +6 V Control Voltages (VMODE1, VMODE2, VEN) 0 +3.5 V RF Input Power (PIN) - +10 dBm -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 2500 - 2570 MHz Supply Voltage (VCC) +3.1 +3.4 +4.35 V POUT < +28.7 dBm Enable Voltage (VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA “on” PA “shut down” Mode Control Voltage (VMODE1, VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode 27.9(1) 26.8(1) - 28.7 27.6 17.0 16.0 8.0 7.0 - dBm -30 - +90 C WCDMA Output Power (UMTS) R99, HPM LTE(2) & HSPA (MPR = 0), HPM R99, MPM LTE(2) & HSPA (MPR = 0), MPM R99, LPM LTE(2) & HSPA (MPR = 0), LPM Case Temperature (TC) COMMENTS 3 GPP TS 34.121-1, Rel 8 Table C.11.1.3 for WCDMA TS 36.101 Rel 8 for LTE The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For Operation at 3.1 V, POUT is derated by 0.8 dB. (2) LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK. 3 Data Sheet - Rev 2.3 09/2012 ALT6707 Table 4: Electrical Specifications - LTE Operation (MPR = 0, 10 MHz, 12 RB, QPSK) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25 14.5 7.5 28 17 10 31 19.5 12.5 ACLR E-UTRA (1) at ± 10 MHz offset - -39 -39 -41 ACLR UTRA at ± 7.5 MHz offset - ACLR UTRA at ± 12.5 MHz offset POUT VMODE1 VMODE2 dB +27.6 dBm +16 dBm +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -33 -33 -33 dBc +27.6 dBm +16 dBm +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -39 -39 -43 -36 -36 -36 dBc +27.6 dBm +16 dBm +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V - -60 -60 -60 -40 -40 -40 dBc +27.6 dBm +16 dBm +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 30 22 15 34 26 19 - % +27.6 dBm +16 dBm +7 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V Quiescent Current (Icq) Low Bias Mode - 2.0 3.5 mA through VCC pin 1.8 V 1.8 V Spurious Output Level (all spurious outputs) - - <-70 dBc POUT ≤ +27.6 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges 8:1 - - VSWR Applies over full operating range Mode Control Current - 0.08 0.15 mA through VMODE pins, VMODE1,2 = +1.8 V Enable Current - 0.03 0.1 mA through VEN pin BATT Current - 0.8 1.5 mA through VBATT pin, VMODE1,2 = +1.8 V Leakage Current - <5 10 µA VBATT = +4.2 V, VCC = +4.2 V, VEN = 0 V, VMODE1,2 = 0 V Noise Power - -135 -150 -137 - dBm/Hz 2620 - 2690 MHz GPS Band ISM Band Harmonic 2fo 3fo, 4fo - -45 -51 -35 -42 dBc P OUT ≤ +27.6 dBm Coupling Factor - 20 - dB Directivity - 20 - dB Daisy Chain Insertion Loss - 0.2 - dB Power-Added Efficiency (1) Load mismatch stress with no permanent degradation or failure Notes: (1) ACLR and Efficiency measured at 2535 MHz. 4 COMMENTS Data Sheet - Rev 2.3 09/2012 ALT6707 Table 5: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25 14.5 7.5 28 17 11 31 19.5 12.5 ACLR1 at 5 MHz offset (1) - -40 -40 -42 ACLR2 at 10 MHz offset - Power-Added Efficiency 34 25 17 - (1) Spurious Output Level (all suprious outputs) Load mismatch stress with no permanent degradation or failure Phase Delta: HPM - LPM HPM - MPM MPM - LPM POUT VMODE1 VMODE2 dB +28.7 dBm +17 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -37 -37 -37 dBc +28.7 dBm +17 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V -53 -55 -59 -48 -48 -48 dBc +28.7 dBm +17 dBm +8 dBm 0V 1.8 V 1.8 V 0V 0V 1.8 V 39 29 19 21 13 - % +28.7 dBm +17 dBm +13.5 dBm +8 dBm +3.5 dBm 0V 1.8 V 1.8 V 1.8 V 1.8 V 0V 0V 0V 1.8 V 1.8 V - - -70 dBc 8:1 - - VSWR - 4 4 0 - Deg Notes: (1) ACLR and Efficiency measured at 2535 MHz. 5 COMMENTS Data Sheet - Rev 2.3 09/2012 POUT < +28.7 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range ALT6707 PERFORMANCE DATA PLOTS: (LTE Operation 2535 MHz and 50 V system) Figure Figure 3: LTE Gain over Temperature 4: LTE Gain(dB) (dB) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 35 25C 3.2Vcc 25C 3.4Vcc 25C 3.4Vcc 30 90C 3.4Vcc 25C 4.2Vcc 25 25 Gain (dB) Gain (dB) 30 -30C 3.4Vcc Figure 4: 5:LTE (dB) Voltage Figure LTE Gain Gain (dB) overover Voltage (T(Tc=25C C = 25) 8C) 20 20 15 15 10 0 5 10 15 20 25 10 30 0 5 Pout (dBm) 25C 3.4Vcc 45 90C 3.4Vcc 40 35 Efficiency Efficiency (%) 40 30 25 20 15 20 25 25C 3.4Vcc 25C 4.2Vcc 20 10 5 25C 3.2Vcc 25 15 10 5 30 0 5 10 25C 3.4Vcc 90C 3.4Vcc ACLR1 (5MHz dBc) ACLR1 (5MHz dBc) -25 -30C 3.4Vcc -35 -40 -45 -50 0 5 10 15 Pout (dBm) 6 20 25 30 FigureFigure 8: 9: LTE ACRL1 (dBc over Voltage LTE ACLR1 (dBc) over Voltage (T(Tc=25C) C = 25 8C) Figure 7:Figure LTE over Temperature 8: ACRL1 LTE ACRL1 (dBc) (dBc) over Temperature (Vbatt=Vcc=3.4V) = VCC = 3.4 V) (VBATT -30 15 Pout (dBm) Pout (dBm) -25 30 30 10 5 25 35 15 0 20 7: LTE PAE (%) over Voltage FigureFigure 6: LTE PAE (%) over Voltage (Tc=25C) (TC = 25 8C) 50 -30 3.4cc 45 15 Pout (dBm) Figure LTEPAE PAE (%) Temperature Figure 5: 6:LTE (%)over over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 50 10 20 25 30 25C 3.2Vcc 25C 3.4Vcc -30 25C 4.2Vcc -35 -40 -45 -50 0 5 10 15 Pout (dBm) Data Sheet - Rev 2.3 09/2012 20 25 30 ALT6707 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~17dBm - 7 dBm, the PA could be switched to Medium Power Mode. For POUT levels < ~8 dBm, the PA could be switched to Low Power Mode for extremely low current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 6: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 vcc VBATT Low power (Low Bias Mode) < +8 dBm Low +1.8 V +1.8 V +1.8 V 3.1 - 4.35 V > 3.1 V Med power (Medium Bias Mode) > +7 dBm < +17 dBm Low +1.8 V +1.8 V 0V 3.1 - 4.35 V > 3.1 V High power (High Bias Mode) > +16 dBm High +1.8 V 0V 0V 3.1 - 4.35 V > 3.1 V - Shutdown 0V 0V 0V 3.1 - 4.35 V > 3.1 V Shutdown VBATT VCC C4 2.2 µF C1 33 pF 1 2 RFIN VMODE2 VMODE1 VEN C2 GND at slug VBATT VCC RFIN RFOUT 10 9 3 VMODE2 CPLIN 8 4 VMODE1 GND 7 5 VEN RFOUT CPLIN CPLOUT 6 Figure 9: Evaluation Board Schematic 7 Data Sheet - Rev 2.3 09/2012 C3 0.01 µF 2.2 µF ceramic CPLOUT ALT6707 PACKAGE OUTLINE Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code (YYWW) 6707R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure 11: Branding Specification - M45 Package 8 Data Sheet - Rev 2.3 09/2012 ALT6707 PCB AND STENCIL DESIGN GUIDELINE Figure 12: Recommended PCB Layout Information 9 Data Sheet - Rev 2.3 09/2012 ALT6707 COMPONENT PACKAGING Pin 1 Figure 13: Carrier Tape Figure 14: Reel 10 Data Sheet - Rev 2.3 09/2012 ALT6707 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE ALT6707RM45Q7 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module ALT6707RM45P9 -30 oC to +90 oC RoHS Compliant 10 Pin 3 mm x 3 mm x 1 mm Partial Tape and Reel Surface Mount Module PACKAGE DESCRIPTION COMPONENT PACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 11 Data Sheet - Rev 2.3 09/2012