ALT6707 HELP4 UMTS2600 (Band 7) WCDMA/LTE Linear PAM TM Data Sheet - Rev 2.0 FEATURES • HSPA, LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.7 dBm • 29 % @ POUT = +17 dBm • 19 % @ POUT = +13.5 dBm • 21 % @ POUT = +7.0 dBm • 13 % @ POUT = +3.5 dBm ALT6707 • Low Quiescent Current: <4 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port • Internal DC Blocks on IN/OUT RF ports • Optimized for a 50 Ω System • 1.8V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Band 7 WCDMA/HSPA Wireless Devices • Band 7 LTE Wireless Devices PRODUCT DESCRIPTION GNDatSlug(pad) The ALT6707 HELP4TM PA is a 4th generation HELPTM product for LTE and WCDMA devices operating in UMTS2600 (Band 7). This PA incorporates ANADIGICS’ HELP4TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown mode with low leakage current increase handset talk and standby time. A “daisy chainable” directional coupler is integrated in the module, thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 08/2011 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL BiasControl VoltageRegulation Figure 1: Block Diagram ALT6707 VBATT 1 10 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT BatteryVoltage 2 RFIN RFInput 3 VMODE2 ModeControlVoltage2 4 VMODE1 ModeControlVoltage1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN CouplerInput 9 RFOUT RFOutput 10 VCC PAEnableVoltage CouplerOutput SupplyVoltage Data Sheet - Rev 2.0 08/2011 VCC ALT6707 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT SupplyVoltage(VCC) 0 +5 V BatteryVoltage(VBATT) 0 +6 V ControlVoltages(VMODE1,VMODE2,VEN) 0 +3.5 V RFInputPower(PIN) - +10 dBm -40 +150 °C StorageTemperature(TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT OperatingFrequency(f) 2500 - 2570 MHz SupplyVoltage(VCC) +3.1 +3.4 +4.35 V POUT <+28.7dBm EnableVoltage(VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA"on" PA"shutdown" ModeControlVoltage(VMODE1,VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V LowBiasMode HighBiasMode 27.9(1) 26.8(1) - 28.7 27.6 17.0 16.0 8.0 7.0 - dBm -30 - +90 °C WCDMAOutputPower(UMTS) R99,HPM LTE (2)&HSPA(MPR=0),HPM R99,MPM LTE (2)&HSPA(MPR=0),MPM R99,LPM LTE (2)&HSPA(MPR=0),LPM CaseTemperature(TC) COMMENTS 3GPPTS34.121-1,Rel8 TableC.11.1.3forWCDMA TS36.101Rel8forLTE The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For Operation at 3.1 V., POUT is derated by 0.8 dB. (2) LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK. Data Sheet - Rev 2.0 08/2011 3 ALT6707 Table 4: Electrical Specifications - LTE Operation (MPR = 0, 10 MHz, 12 RB, QPSK) (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT Gain 25 14.5 7.5 27.5 17 10 30 19.5 12.5 ACLR E-UTRA (1) at 10MHzoffset - -39 -39 -41 ACLR UTRA at 7.5MHzoffset - ACLR UTRA at 12.5MHzoffset POUT VMODE1 VMODE2 dB POUT=+27.6dBm POUT=+16dBm POUT =+7dBm 0V 1.8V 1.8V 0V 0V 1.8V -33 -33 -33 dBc POUT=+27.6dBm POUT=+16dBm POUT =+7dBm 0V 1.8V 1.8V 0V 0V 1.8V -39 -39 -43 -36 -36 -36 dBc POUT=+27.6dBm POUT=+16dBm POUT =+7dBm 0V 1.8V 1.8V 0V 0V 1.8V - -60 -60 -60 -40 -40 -40 dBc POUT=+27.6dBm POUT=+16dBm POUT =+7dBm 0V 1.8V 1.8V 0V 0V 1.8V 30 22 15 34 26 19 - % POUT=+27.6dBm POUT=+16dBm POUT =+7dBm 0V 1.8V 1.8V 0V 0V 1.8V QuiescentCurrent(Icq) LowBiasMode - 2.0 3.5 mA throughVCCpin 1.8V 1.8V SpuriousOutputLevel (allspuriousoutputs) - - <-70 dBc POUT +27.6dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperatingranges 8:1 - - VSWR Appliesoverfulloperatingrange ModeControlCurrent - 0.08 0.15 mA throughVMODE pins,VMODE1,2=+1.8V EnableCurrent - 0.03 0.1 mA throughVENpin BATTCurrent - 0.8 1.5 mA throughVBATTpin,VMODE1,2=+1.8V LeakageCurrent - <5 10 A VBATT =+4.2V,VCC=+4.2V, VEN=0V,VMODE1,2=0V NoisePower - -135 -150 -137 - Harmonic 2fo 3fo,4fo - -45 -51 -35 -42 dBc CouplingFactor - 20 - dB Directivity - 20 - dB DaisyChainInsertionLoss - 0.2 - dB Power-AddedEfficiency(1) Loadmismatchstresswithno permanentdegradationorfailure 2620MHzto2690MHz dBm/Hz GPSBand ISM Band Notes: (1) ACLR and Efficiency measured at 2535 MHz. 4 COMMENTS Data Sheet - Rev 2.0 08/2011 POUT +27.6dBm ALT6707 Table 5: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) MIN TYP MAX UNIT 25 14.5 7.5 27.5 17 11 30 19.5 12.5 ACLR1at5MHzoffset(1) - -40 -40 -42 ACLR2at10MHzoffset 34 25 17 - PARAMETER Gain Power-AddedEfficiency(1) SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure COMMENTS POUT VMODE1 VMODE2 dB POUT = +28.7dBm POUT=+17dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V -37 -37 -37 dBc POUT = +28.7dBm POUT=+17dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V -53 -55 -59 -48 -48 -48 dBc POUT =+28.7dBm POUT=+17dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V 39 29 19 21 13 - % POUT = +28.7dBm POUT=+17dBm POUT=+13.5dBm POUT=+8dBm POUT=+3.5dBm 0V 1.8V 1.8V 1.8V 1.8V 0V 0V 0V 1.8V 1.8V - - -70 8:1 - - dBc POUT +28.7dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperating conditions VSWR Appliesoverfulloperatingrange Notes: (1) ACLR and Efficiency measured at 2535 MHz. Data Sheet - Rev 2.0 08/2011 5 ALT6707 PERFORMANCE DATA PLOTS: (LTE Operation 2535 MHz and 50 V system) Figure Figure 3: LTE Gain over Temperature 4: LTE Gain(dB) (dB) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 35 25C3.2Vcc 25C3.4Vcc 25C3.4Vcc 30 90C3.4Vcc 25C4.2Vcc 25 25 Gain (dB) Gain (dB) 30 -30C3.4Vcc Figure 4: 5:LTE (dB) Voltage Figure LTE Gain Gain (dB) overover Voltage (T(Tc=25C C = 25) 8C) 20 20 15 15 10 0 5 10 15 20 25 10 30 0 5 Pout (dBm) 25C3.4Vcc 45 90C3.4Vcc 40 35 Efficiency Efficiency (%) 40 30 25 20 15 20 25 25C3.4Vcc 25C4.2Vcc 20 10 5 25C3.2Vcc 25 15 10 5 30 0 5 10 25C3.4Vcc 90C3.4Vcc ACLR1(5MHzdBc) ACLR1(5MHzdBc) -25 -30C3.4Vcc -35 -40 -45 -50 0 5 10 15 Pout (dBm) 6 20 25 30 FigureFigure9:LTEACLR1(dBc)overVoltage 8: LTE ACRL1 (dBc over Voltage (T(Tc=25C) C = 25 8C) Figure 7:Figure8:LTEACRL1(dBc)overTemperature LTE ACRL1 (dBc) over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) -30 15 Pout (dBm) Pout (dBm) -25 30 30 10 5 25 35 15 0 20 7: LTE PAE (%) over Voltage FigureFigure 6: LTE PAE (%) over Voltage (Tc=25C) (TC = 25 8C) 50 -303.4cc 45 15 Pout (dBm) Figure LTEPAE PAE (%) Temperature Figure 5: 6:LTE (%)over over Temperature (Vbatt=Vcc=3.4V) (VBATT = VCC = 3.4 V) 50 10 20 25 30 25C3.2Vcc 25C3.4Vcc -30 25C4.2Vcc -35 -40 -45 -50 0 5 10 15 Pout (dBm) Data Sheet - Rev 2.0 08/2011 20 25 30 ALT6707 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~17dBm - 7 dBm, the PA could be switched to Medium Power Mode. For POUT levels < ~8 dBm, the PA could be switched to Low Power Mode for extremely low current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 6: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 vcc VBATT Lowpower (LowBiasMode) <+8dBm Low +1.8V +1.8V +1.8V 3.1-4.35V >3.1V Medpower (MediumBiasMode) >+7dBm <+17dBm Low +1.8V +1.8V 0V 3.1-4.35V >3.1V Highpower (HighBiasMode) >+16dBm High +1.8V 0V 0V 3.1-4.35V >3.1V - Shutdown 0V 0V 0V 3.1-4.35V >3.1V Shutdown VBATT VCC C4 2.2µF C1 33pF 1 2 RFIN VMODE2 VMODE1 VEN C2 GNDatslug VBATT VCC RFIN RFOUT 10 9 3 VMODE2 CPLIN 8 4 VMODE1 GND 7 5 VEN C3 0.01 µF 2.2µFceramic RFOUT CPLIN CPLOUT 6 CPLOUT Figure 9: Evaluation Board Schematic Data Sheet - Rev 2.0 08/2011 7 ALT6707 PACKAGE OUTLINE Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code (YYWW) 6707R LLLLNN YYWWCC Part Number Lot Number Country Code(CC) Figure 11: Branding Specification - M45 Package 8 Data Sheet - Rev 2.0 08/2011 ALT6707 COMPONENT PACKAGING Pin 1 Figure 12: Tape & Reel Packaging Table 7: Tape & Reel Dimensions PACKAGETYPE TAPEWIDTH POCKETPITCH REEL CAPACITY MAX REEL DIA 3mmx3mmx1mm 12mm 4mm 2500 7" Data Sheet - Rev 2.0 08/2011 9 ALT6707 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6707RM45Q7 -30oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm TapeandReel,2500piecesperReel SurfaceMountModule ALT6707RM45P9 -30oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm PartialTapeandReel SurfaceMountModule COMPONENTPACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 10 Data Sheet - Rev 2.0 08/2011