BL-HP51A

High Power LED
BL-HP51AXX
Features:
1W LEDs , suitable for illumination lamps and decorative lighting
Longer service and less luminosity loss, 50,000hours
Different emitting colors are available Working current: 200-350mA
With or without heat sink are both available
Ø
Ø
Ø
Ø
Applications:
Commercial lighting
Residential lighting
Decorative lighting
1Watt Lambertian
Electrical-optical characteristics: (Ta=25°C)
Chip
Part Number
Lens
Type
?P
(nm) or
CTT
Emitted Color
Forward
Voltage(VF)
Unit:V
Flux
Unit:lm
Typ
Max
Min.
Typ.
BL-HP51AUEC
Ultra Orange
630
6.0
6.5
60
70
BBL-HP51AUYC
Ultra Yellow
590
6.0
6.5
60
70
BL-HP51APGC
Ultra Pure Green
525
9.5
11.0
100
150
BL-HP51ABGC
Ultra Bluish Green
505
9.5
11.0
80
130
BL-HP51AUBC
Ultra Blue
470
9.5
11.0
25
35
BL-HP51AUWC
Ultra White
6000k
9.5
11.0
100
150
BL-HP51AUW2C
Ultra Warm White
3200k
9.5
11.0
80
120
Water
Clear
View
ing
Angl
e
2¦È1/2
(deg)
125
Absolute maximum ratings (Ta=25°C)
Parameter
Forward Current IF
LED Junction Temperature
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature T OPR
Storage Temperature T STG
Aluminum-Core Pcb
UE
UY
BG
PG
UB
UW
Unit
270
120
270
120
270
120
270
120
270
120
270
120
mA
500
500
500
500
500
500
mA
°C
-40 to +80
-40 to +100
°C
105
°C
Temperature
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.4
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°C
High Power LED
BL-HP51AXX
■ Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is
0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
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REV NO: V.4
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High Power LED
BL-HP51AXX
Typical electrical-optical characteristics curves:
(A)
1.0
(B )
(C)
( D)
(2)
(3)
(8)
( 4)
(1) (6)
( 5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wav elength(nm)
RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
8
64 5
1
50
2 3
R
E
L
A
T
IV
E
L
U
M
IN
O
U
S
IN
T
E
N
S
IT
Y
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
3.0
2.0
5
B
1.0
0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
R
E
L
A
T
IV 3
1
E 2
5
4
L
2
U
M 1 3
IN
O
U 0.5
S
IN
T
E
N
S 0.2
IT
Y
0.1
-30 -20
50
1
40
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
3KHz
300KHz
1KHz
100KHz F-REFRESH R ATE
10 10KH z
9
8
7
6
5
ID
C
M
A
X
.
ID
C
M
A
X
.
Ip
e 4
a
k
M
A 3
X
.
2
-10
0
10
20
30
40
50
60
60
80
100
Ip
e
a
k
M
A
X
.
30KHz
3 KHz
300Hz
100KHz
10KHz 1KHz
100H z
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEM PER ATUR E Ta(℃ )
40
AMBIENT TEMPERATURE Ta( ℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
FORWARD CURRENT (mA)
RELATIVE LUMI NOUS
INTENSI TY VS. FORWARD
CURRENT
1
10
100
1000
tp-PU LSE DU RATION uS
(1,2 ,3 ,4,6,8,B.D.J. K)
10,000
1
1
10
100
1000
tp-P ULSE DU RATION uS
(5)
NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d
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REV NO: V.4
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10,000