BL-M11C571xx,BL

LED DOT MATRIX
BL-M11X571XX
Features:
30.42mm (1.1”) Φ3.0 dot matrix LED display. BI-COLOR
Low current operation.
Excellent character appearance.
Easy mounting on P.C. Boards or sockets.
I.C. Compatible.
ROHS Compliance.
Electrical-optical characteristics: (Ta=25°
°C )
(Test Condition: IF=20mA)
Part No
BL-M11C571EG-XX
BL-M11C571DUG-XX
BL-M11C571UEUG-X
X
Iv
λP
(nm)
Typ
Max
TYP.(mcd)
AlGaInP
660
2.10
2.50
100
Green
GaP/GaP
570
2.20
2.50
95
Red
GaAsP/Ga
P
635
2.10
2.50
90
Green
GaP/GaP
570
2.20
2.50
95
Ultra Red
AlGaInP
660
2.10
2.50
110
Ultra Green
AlGaInP
574
2.20
2.50
130
BL-M11D571UEUG-X
Ultra Red
AlGaInP
630
2.10
2.50
100
X
Ultra Green
AlGaInP
574
2.20
2.50
130
Row Cathode
Column Anode
BL-M11C571SG-XX
VF
Unit:V
Chip
Row Anode
Column Cathode
BL-M11D571SG-XX
Emitted Color
Super Red
BL-M11D571EG-XX
BL-M11D571DUG-XX
-XX: Surface / Lens color:
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
Material
1
2
3
4
5
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25°C)
S
G
E
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
30
75
5
30
80
5
30
80
5
30
75
5
30
75
5
30
65
5
mW
150
150
150
150
150
150
mA
Lead Soldering Temperature
TSOL
D
UG
UE
U
nit
Parameter
-40 to +80
-40 to +85
Max.260±5°C for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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mA
V
°C
°C
°
C
LED DOT MATRIX
BL-M11X571XX
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M11X571XX
Typical electrical-optical characteristics curves:
(A)
1.0
(B)
(C)
(D)
(2)
(3)
(8)
(4)
(1) (6)
(5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wavelength(nm)
RELATIVE INTENSITY Vs WAVELENGTH(λ p )
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
8
64 5
2 3
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
4.0
3.0
2.0
1.0
0
3.0
20
60
80
0.2
-10
0
10
20
30
40
50
60
3
5
10
20
40
60
80
100
AMBIENT TEMPERATURE Ta(℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
4
3
3KHz
300Hz
30KHz
100KHz
10KHz 1KHz
100Hz
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEMPERATURE Ta(℃)
20
6
2,4,8,A
0
100
2
-20
30
1
Ipeak MAX.
IDC MAX.
0.5
40
300KHz
3KHz
10KHz
1KHz
100KHz F-REFRESH RATE
10
9
8
7
6
5
1
5
4
2
3
0.1
-30
40
FORWARD CURRENT (mA)
RELATIVE LUMINOUS
INTENSITY VS. FORWARD
CURRENT
Ipeak MAX.
IDC MAX.
RELATIVE LUMINOUS INTENSITY
1
5
B
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
3
2
50
1
FORWARD CURRENT(mA)
FORWARD CURRENT(mA)
RELATIVE LUMINOUS INTENSITY
1
50
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
1
10
100
1000
tp-PULSE DURATION uS
(1,2,3,4,6,8,B.D.J.K)
10,000
1
1
10
100
1000
tp-PULSE DURATION uS
(5)
NOTE:25℃ free air temperature unless otherwise specified
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000
LED DOT MATRIX
BL-M11X571XX
Packing and weighting
6.3g/pcs
Maximum
64pcs/bag
Maximum
5
Bag/Inner Box
3 Inner Box /Box
9 Inner Box /Box
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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