Eon Silicon Solution Inc. Migration Note EON Flash EN25Q32A to EN25Q32B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from EON EN25Q32A Flash to Eon EN25Q32B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table is major features of these two devices. Features Voltage range Pin to compatible pin SPI frequency EN25Q32B 2.7 ~ 3.6 V 8-pin SOP 200mil 8 contact VDFN 16-pin SOP 300mil 104MHz (standard mode) 80MHz @ dual & quad mode EN25Q32A 2.7 ~ 3.6 V 8-pin SOP 200mil 8 contact VDFN 16-pin SOP 300mil 100MHz (standard mode) 80MHz @ dual & quad mode 100K 100K 8-pin SOP 200mil 8 contact VDFN 16-pin SOP 300mil 24-ball BGA (6 x 8 mm) 8-pin SOP 200mil 8 contact VDFN 16-pin SOP 300mil 8-pin PDIP Secured silicon 512 Byte 512 Byte sector region Sector Uniform 1024 sectors of 4K byte Uniform 1024 sectors of 4K byte architecture / 64 block of 64K byte / 64 block of 64K byte SPI mode Mode 0 / Mode 3 Mode 0 / Mode 3 Dual output fast Yes Yes read (3Bh) Dual I/O fast read Yes Yes (BBh) Quad I/O fast Yes Yes read (EBh) Software reset Yes No Minimum endurance cycle Package This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison There is no differernce in ICC between EN25Q32A and EN25Q32B. EN25Q32B EN25Q32A Read ICC3 Max 25 Max 25 Page Program (PP) ICC4 28 28 mA Sector Erase (SE) ICC6 25 25 mA Standby ICC1 20 20 A Current This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Unit mA ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) There is no difference in Manufacture ID, Device ID between EN25Q32A and EN25Q32B. For EN25Q32A OP Code (M7-M0) (ID15-ID0) ABh (ID7-ID0) 15h 90h 1Ch 9Fh 1Ch 15h 3016h For EN25Q32B OP Code (M7-M0) (ID15-ID0) ABh (ID7-ID0) 15h 90h 1Ch 9Fh 1Ch 15h 3016h This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. 4.2 Software Reset There is a new function “Software Reset” in EN25Q32B, which can put the device in normal operating Ready mode. Figure 1. Reset-Enable and Reset Sequence Diagram Figure 2 . Reset-Enable and Reset Sequence Diagram under EQIO Mode This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erase and program performance of EN25Q32B is better than EN25Q32A. EN25Q32B Parameter EN25Q32A Unit Typ Max Typ Max Page Programming Time 0.8 5 1.3 5 ms Sector Erase Time 0.05 0.3 0.09 0.3 Sec Block Erase Time 0.2 2 0.5 2 Sec Chip Erase Time 12 24 25 50 Sec NOTE: ERASE FROM “1” “1”. 5.2 KEY AC PARAMETER PERFORMANCE There is no difference in key AC parameter performance between EN25Q32A and EN25Q32B. EN25Q32B EN25Q32A tCH (serial clock high time) Min@ 4ns Min@ 4ns tCL (serial clock low time) Min@ 4ns Min@ 4ns tCLCH(serial clock rise time) Min@ 0.1V / ns Min@ 0.1V / ns tCLCL(serial clock fall time) Min@ 0.1V / ns Min@ 0.1V / ns Min@ 5ns Min@ 5ns Min, read @15ns Min, read @15ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) Program/Erase @50ns Program/Erase @50ns tDSU(Data in setup time) Min@2ns Min@2ns tDH(Data in hold time) Min@5ns Min@5ns This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07 Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/06/07 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. www.eonssi.com Rev. A, Issue Date: 2010/06/07