Eon Silicon Solution Inc. Page 1/5 EN29PL032 V.S. S29JL032H Specification Comparison 32Mbit (4 x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Part No. : EN29PL032 Issued date : 2008 / 08 / 20 Prepared by : FAE EngineerBrian Hsieh Approval by : FAE ManagerJason Tseng This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 2/5 1. Part No. Eon : Spansion : EN29PL032 S29JL032H 2. Basic Features: The following features are identical with each other. JEDEC standard compatible pin-out and command sets. 2.7 – 3.6 Voltage Simultaneous Read/Write Operation. CFI (Common Flash Interface) compliant Erase Suspend / Resume Unlock Bypass Program WP# / ACC (Write Protect/Acceleration) High Voltage Sector Protection and Temporary Sector Unprotect This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 3/5 3. Autoselect Codes Comparison table: EON: Amax Description Device ID Manufacturer ID: Eon CE# OE# WE# L Read Cycle 1 L Read Cycle 2 L Read Cycle 3 L Sector Protection Verification Secured Silicon Indicator Bit (DQ7, DQ6) L L L L L L H H H H A5 to A12 A10 A9 BA X BA X SA X BA (See Note) X V ID VI D VI D VI D to A8 A7 A6 A4 A3 A2 A1 A0 H1 L X X X L L L X L X L L L L L X DQ15 to DQ0 001Ch L L L L L L L H 227Eh H H H L 2202h (PL064) 220Ah (PL032) H H H H 2201h (PL064) 2201h (PL032) L L H L 0001h (protected), 0000h (unprotected) L L H H 007Fh DQ6=1 (customer locked) Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. Spansion : This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 4/5 4. Difference Comparison Table: S29JL032H VID Pin to Pin Byte mode Page read Secure sector 11.5 to 12.5 Yes for Word mode Yes (PIN47: Byte/word mode select) No 256 bytes 8.5 - 9.5 Yes No (PIN47:NC) 4-words 64 words 4 Banks: 4M, 12M, 12M, 4M 01,02 FlexBank Architecture EN29PL032 21,22 2 Banks: 4M, 28M 31,32 2 Banks: 8M, 24M 41,42 2 Banks: 16M, 16M 4 Banks: 4M, 12M, 12M, 4M 4 Kword x 8 and 32 Kword x 7 01,02 boot sectors at the top and bottom Boot Sectors 21,22 4 Kword x 8 and 32 Kword x 7 4 Kword x 8 and 32 Kword x 7 boot sectors at the top or bottom boot sectors at the top and bottom 4 Kword x 8 and 32 Kword x 15 31,32 boot sectors at the top or bottom 4 Kword x 8 and 32 Kword x 31 41,42 boot sectors at the top or bottom CFI Program Suspend/Resume Multi sector erase Write Buffer Programming Yes. Spansion's CFI table Yes. EoN's CFI table No Yes Yes No No 32-word Write Buffer PPB Lock Bit No Available package 48-pin TSOP Yes 48-pin TSOP 48 ball FBGA Note: S29JL032H 60 T A I 00 0 Model number: 01, 02, 21, 22, 31, 32, 41, 42 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 5/5 5. Conclusion It is no problem to replace S29JL032H by EN29PL032, if customer uses S29JL032H in Word mode. A matter needing attention is Bank structure and Multi erase function. S29JL032H has 4 kinds of bank structure. The 01/02 are the same with EN29PL032, but 21/22, 31/32 and 41/42 are two bank design and different with EN29PL032. Another one the Multi erase function, customer must issue another sector erase command for the next sector to be erased after the previous one is completed for EN29PL032. The 4 banks structure, Page mode and 32 word programming write buffer will enhance flash performance. So EN29PL032 device is a good choice to fully replace S29JL032H. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20