Eon Silicon Solution Inc. Migration Note Spansion Flash S29AL008J to Eon Flash EN29LV800C This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from Spansion S29AL008J Flash to Eon EN29LV800C Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table is major features of these two devices. Features Process Technology voltage range Pin to Pin EN29LV800C S29AL008J 0.13 m 0.11 m 2.7 ~ 3.6 Pin 14 = NC (for 48 TSOP) B3 = NC (for 48 TFBGA) 2.7 ~ 3.6 Pin 14 = WP# (for TSOP 48) B3 = WP# (for 48 FBGA) 70ns 55ns (Vcc=3.0~3.6V) Access time 70ns Secured Silicon Sector region None 128-word/256-byte 32Kword x 15 sectors and 32Kword x 15 sectors and 16Kword + 4Kword x 2 + 8Kword 16Kword + 4Kword x 2 + 8Kword boot sectors at Top or Bottom boot sectors at Top or Bottom Byte/Word mode Yes Yes VID and VHH 10.5V - 11.5V 8.5V - 12.5V Max CFI Compliant None Yes Erase Yes Yes Suspend/Resume Continuous None Yes Sector Erasure Sector Architecture Minimum endurance cycle Package 100K 1,000K (typ.) 48-pin 12mm x 20mm TSOP 48 ball 6mm x 8mm TFBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 48-pin 12mm x 20mm TSOP 48 ball 6mm x 8mm FBGA 56-pin 16mm x 23.7mm SSOP ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison EN29LV800C Current Typ Read ICC1 (5MHz) S29AL008J Unit Max Typ Max 7 20 7 12 mA Write ICC2 15 30 20 30 mA Standby ICC3 1 5.0 0.2 5.0 A 3.2 WP# input pin Pin S29AL008J EN29LV800C For boot sector device: at VIL protect first or last 14 NC 16Kbyte sector depending on boot configuration (top boot or bottom boot). When unconnected, WP# is internal pull-up at VIH to unprotect. 3.3 Max VID S29AL008J VID range is 8.5V and 11.5V. But EN29LV800C VID range is 10.5V~11.5V. Any voltage level higher than 11.5V would damage the device. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer, Device Identification and Autoselect Information comparison EN29LV800C: S29AL008J: This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. 4-2. Secured Silicon Sector The EN29LV800C doesn’t have Secured Silicon Sector and does not support enter or Exit Secured Silicon Sector command. 4-3. Continuous Sector Erasure The EN29LV800C doesn’t support Continuous Sector Erasure function. Users must issue another sector erase command for the next sector to be erased after the previous one is completed for EN29LV800C. 4-4. CFI (Common Flash Interface) commands The EN29LV800C doesn’t support CFI as S29AL008J 03/04. We support CFI from 16Mbit flash. If user has to use CFI to get flash information, we suggest user to use EN29LV160. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings Parameter Description tVCS Vcc Setup Time RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Test Setup EN29LV800C S29AL008J Min. 50µs 50µs Min. 10µs 500ns Min. 500ns 500ns Min. 50ns 50ns Min. 0ns 0ns Min. 50ns None* Max. 20µs 35µs Max. 500ns 500ns Note* : There is no description in datasheet. 5.2 ERASE AND PROGRAM PERFORMANCE The erase and program performance comparison. EN29LV800C S29AL008J Typ Max Typ Max 0.1 2 0.5 10 sec Chip Erase Time 2 20 10 Note* sec Byte Programming Time 8 200 6 Note* µs Word Programming Time 8 200 6 150 µs Byte 4.2 12.6 Note* Note* sec Word 8.4 25.2 Note* Note* sec Parameter Sector Erase Time Chip Programming Time Unit Note* : There is no description in datasheet. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/04/10 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 ©2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 04/10 www.ession.com