Application Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
EON EN25Q32B
(Version : Preliminary 0.2)
vs
Winbond W25Q32BV
(Version : D)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from Winbond
W25Q32BV Flash to Eon EN25Q32B Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
2.1 The following table highlights the major features of these two devices.
Features
Voltage range
Pin to pin
compatible
(standard SPI mode)
SPI mode
SPI frequency
(standard mode)
Sector architecture
Lockable OTP
security sector
EQIO mode
(Full quad mode)
Block erase
32K Byte
Program and erase
suspend / resume
Minimum
endurance cycle
Package
EN25Q32B
2.7 ~ 3.6V
W25Q32BV
2.7 ~ 3.6V
N/A
N/A
Mode 0 / Mode 3
104MHz (standard mode)
80MHz @ dual & quad mode
Mode 0 / Mode 3
104MHz (standard mode)
80MHz @ dual & quad mode
Uniform
1024 sectors of 4K byte
128 blocks of 32K byte
64 blocks of 64K byte
Uniform
1024 sectors of 4K byte
64 blocks of 64K byte
512 Byte
1K Byte
Yes
No
No
Yes
No
Yes
100K
100K
8 pins SOP 200mil
8 contact VDFN (5 x 6mm)
16 pins SOP 300mil
24 balls BGA (6 x 8mm)
8-pin SOIC 208mil
8-pad WSON (6 x 5mm, 8 x 6mm)
16-pin SOIC 300mil
8-pin PDIP 300mil
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
EN25Q32B
W25Q32BV
Read ICC3
Max
( @ Single 104MHz)
25
Max
( @ Quad 80MHz)
18
Page Program (PP) ICC4
28
25
mA
Sector Erase (SE) ICC6
25
25
mA
Standby ICC1
20
50
A
Current
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
Unit
mA
www.eonssi.com
Eon Silicon Solution Inc.
3.2 Pin Configuration
8-pin SOP 150mil
For EN25Q32B
For W25Q32BV
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID,
D15~ID0: memory type, ID7~ID0: memory density) comparison.
For EN25Q32B
For W25Q32BV
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.2. Instruction set comparison
EN25Q32B
W25Q32BV does not support EQIO, RSTQIO, RSTEN, RST, Enter OTP mode instructions.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
W25Q32BV
EN25Q32B does not support Write Enable for Volatile Status Register, Read Status
Register-2, Quad Page Program, Block Erase(32KB), Erase / Program Suspend, Erase /
Program Resume, Continuous Read Mode Reset, Fast Read Quad Output, Word Read Quad
I/O, Octal Word Read Quad I/O, Set Burst with Wrap, Read Manufacturer / Device ID by Dual
I/O, Read Manufacturer / Device ID by Quad I/O, Read Unique ID, Erase Security Registers,
Program Security Registers, Read Security Registers instructions.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.3 Different block protection area
The definition of block protection area is different.
EN25Q32B
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
W25Q32BV
CMP = 0
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
CMP = 1
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.4 Different RDSR bit definition
The definition of RDSR bit S5 and S6 are different, and EN25Q32A does not have S8 ~
S15 bits.
EN25Q32B
W25Q32BV
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN25Q32B
Parameter
W25Q32BV
Unit
Typ
Max
Typ
Max
Page programming time
0.8
5
0.7
3
ms
Sector erase time
0.05
0.3
0.03
0.2
sec
Block erase time
0.2
2
0.15
1
sec
Chip (Bulk) erase time
15
25
7
15
sec
5.2 KEY AC PARAMETER PERFORMANCE
EN25Q32B
W25Q32BV
tCH (serial clock high time)
Min @ 4ns
Min @ 6ns
tCL (serial clock low time)
Min @ 4ns
Min @ 6ns
tCLCH(serial clock rise time)
Min @ 0.1V / ns
Min @ 0.1V / ns
tCLCL(serial clock fall time)
Min @ 0.1V / ns
Min @ 0.1V / ns
[email protected] 5ns
Min @ 5ns
Min @ 50ns
Min @ 5ns
tDSU(Data in setup time)
Min @ 2ns
Min @ 1.5ns
tDH(Data in hold time)
Min @ 5ns
Min @ 4ns
Parameter
tCHSH(CS# active setup / hold time)
tSHSL(CS# high time)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2010/07/01
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com