Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from MXIC MX29LV160D Flash to Eon EN29LV160B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table is major features of these two devices. Features voltage range Pin to Pin Access time Secured Silicon Sector region EN29LV160B 2.7 ~ 3.6 Compatible (for 48 TSOP Except Pin 14 = NC) Compatible (for 48 TFBGA Except Ball B3 = NC) 70ns MX29LV160D 2.7 ~ 3.6 Compatible (for 48 TSOP Except Pin 14 = WP#/ACC) Compatible (for 48 TFBGA Except Ball B3 = WP#/ACC) 70ns None None 16K Byte X 1 sector / 8K Byte x 2 sectors /32K Byte X1 sector / Sector Architecture 64K Byte X 31 sectors boot sectors at Top or Bottom Byte/Word mode Yes None WP#/ACC VID and VHH 10.5V - 11.5V Max (High Voltage) CFI Compliant Yes Erase Yes Suspend/Resume Continuous Sector None Erasure Minimum endurance cycle Package 16K Byte X 1 sector / 8K Byte x 2 sectors /32K Byte X1 sector / 64K Byte X 31 sectors boot sectors at Top or Bottom Yes Yes 100K Yes Yes Yes 100K 48-pin 12mm x 20mm TSOP 48-ball 6mm x 8mm TFBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9.5V - 10.5V 2 Rev. A, Issue Date: 2009/12/01 48-pin 12mm x 20mm TSOP 48-ball 6 mm x 8 mm FBGA 48-ball 4 mm x 6 mm WFBGA 48-ball 4 mm x 6 mm XFLGA ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison Current EN29LV160B Typ Read ICC1 MX29LV160D Unit Max Typ Max 9 16 5 12 mA Write ICC2 20 30 15 30 mA Standby ICC3 1 5.0 5 15 μA 3.2 Pin Configuration 48 pin TSOP (Type 1) EN29LV160BT(B)-70TIP MX29LV160DT(B)TC(I) -70G NC WP#/ACC EN29LV160BT(B)-70BIP MX29LV160DT(B)XBC(I) -70G NC WP#/ACC Pin 14 48 ball 6 x 8 mm TFBGA Ball B3 3.3 WP#/ACC feature: EN29LV160B: No MX29LV160D: Support 3.4 Max VID comparison MX29LV160D Vhv (High Voltage) range is 9.5V and 10.5V. But EN29LV160B VID range is 10.5V~11.5V. Any voltage level higher than 11.5V would damage the device, possibly. 4. SOFTWARE CONSIDERATIONS Except manufacture ID, there is no difference in Device ID, and Autoselect functions for EN29LV160B and MX29LV160D are the same. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 4.1 Manufacturer, Device Identification and Autoselect Information Eon MXIC Manufacture ID: 7Fh (A8 = “0”), 1Ch (A8 = “1”). Manufacture ID: C2h Part No. Device ID Part No. Device ID EN29LV160BT 22C4h MX29LV160DT 22C4h EN29LV160BB 2249h MX29LV160DB 2249h For EN29LV160B autoselect mode table For MX29LV160D autoselect mode table 4.2. Continuous Sector Erasure The EN29LV160B doesn’t support Continuous Sector Erasure function. Users must issue another sector erase command for the next sector to be erased after the previous one is completed for EN29LV160B. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings Test Setup Parameter Description tVCS Vcc Setup Time RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 EN29LV160B MX29LV160D Min. 50µs 200µs Min. 10us 10µs Min. 500ns 500ns Min. 50ns 70ns Min. 0ns 0ns Min. 50ns 50ns Max. 20µs 20µs Max. 500ns 500ns 5.2 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. EN29LV160B MX29LV160D Typ Max Typ Max 0.1 2 0.7 2 sec Chip Erase Time 4 35 15 32 sec Byte Programming Time 8 200 9 300 µs Word Programming Time 8 200 11 360 µs Byte 16.8 50.4 18 54 sec Word 8.4 25.2 12 36 sec Parameter Sector Erase Time Chip Programming Time This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/12/01 Unit ©2005 Eon Silicon Solution Inc. www.ession.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/12/01 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/12/01 ©2005 Eon Silicon Solution Inc. www.ession.com