Application Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
EON EN25Q80A
vs
Winbond W25Q80BV
Specification Comparison
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from Winbond
W25Q80BV Flash to Eon EN25Q80A Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
2.1 The following table highlights the major features of these two devices.
Features
Voltage Range
Pin to Pin
Compatible
(Quad mode)
SPI frequency
(standard / dual /
quad mode)
Secured Silicon
Sector Region
EN25Q80A
2.7 ~ 3.6
8-pins SOP 150mil / 208mil
8 contact VDFN (5x6mm)
8-pin DIP
W25Q80BV
2.7 ~ 3.6
8-pin SOP 150mil / 208mil
8-Pad WSON (5x6mm)
8-Pin DIP
100MHz / 80MHz / 80MHz
100MHz / 80MHz / 80MHz
256 Byte
64 Bit (8 Byte) Unique Serial Number
4 x 256 Byte Security Register
Sector
Architecture
Uniform
256 Sectors of 4 K byte
16 blocks of 64 K byte
SPI mode
Mode 0 / Mode 3
Uniform
256 sectors of 4 K byte
16 blocks of 64 K byte
32 blocks of 32 K byte
Mode 0 / Mode 3
Minimum
Endurance Cycle
100K
100K
Package
8-pins SOP 150mil / 208mil
8 contact VDFN (5x6mm)
8-pin DIP
8-pin SOP 150mil / 208mil
8-Pad WSON (5x6mm)
8-Pin DIP
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
EN25Q80A
W25Q80BV
Read ICC3
Max
25
Max
18
Page Program (PP) ICC4
28
25
mA
Sector Erase (SE) ICC6
25
25
mA
Standby ICC1
20
50
μA
Current
Unit
mA
3.2 Pin Configuration
Pin number
Pin1
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin8
EN25Q80A
CS#
DO (DQ1)
WP# (DQ2)
VSS
DI (DQ0)
CLK
NC (DQ3)
VCC
W25Q80BV
CS#
DO (IO1)
WP# (IO2)
VSS
DI (IO0)
CLK
HOLD# (IO3)
VCC
Note:
For the pin Configuration of 8 pin SOP and VDFN (5x6mm) package, Eon EN25Q80A Flash is the
same as Winbond W25Q80BV Flash when using Quad Mode function only.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID,
D15~ID0: memory type, ID7~ID0: memory density) comparison.
For EN25Q80A
OP Code
(M7-M0)
(ID15-ID0)
ABh
(ID7-ID0)
13h
90h
1Ch
9Fh
1Ch
13h
3014h
For W25Q80BV
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
4.2. Instruction Set Comparison
4.2.1 Enable Quad I/O (EQIO) command (38h)
EN25Q80A: Support.
W25Q80BV:No support.
4.2.2 Reset Quad I/O (RSTQIO) command (FFh)
EN25Q80A: Support.
W25Q80BV:No support.
4.2.3 Write Enable for Volatile Status Register command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.4 Different Read Status Register command
EN25Q80A:Only support 05h command. (for register bit 7~ bit0)
W25Q80BV:Support 05h (for register bit 7~ bit 0) and 35h. (for register bit 8 ~ bit 15)
4.2.5 Different Read Status Register length
EN25Q80A:8 bit. (bit7 ~ bit 0)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
W25Q80BV:16 bit. (Bit 15 ~ bit0)
4.2.6 Quad page program command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.7 Different block erase command
EN25Q80A:Only support D8h command. (for 64K byte)
W25Q80BV:Support 52h (for 32K byte) and D8h commands. (for 64K Byte)
4.2.8 Erase / Program suspend commands
EN25Q80A:No support.
W25Q80BV:Support.
4.2.9 Erase / Program resume commands
EN25Q80A:No support.
W25Q80BV:Support.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
4.2.10 Continue read mode reset commands (for Dual / Quad operation)
EN25Q80A:No support.
W25Q80BV:Support.
4.2.11 Fast read quad output command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.12 Word read for quad I/O command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.13 Octal word read for quad I/O command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.14 Set Burst with wrap
EN25Q80A:No support.
W25Q80BV:Support.
4.2.15 Manufacture/Device ID by Dual/Quad I/O command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.16 Read Unique ID command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.17 Erase/Program/Read Security Registers command
EN25Q80A:No support.
W25Q80BV:Support.
4.2.18 Enter OTP mode command (3Ah)
EN25Q80A: Support.
W25Q80BV:No support.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
4.2.19 Different block protect definition
EN25Q80A :
W25Q80BV :
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN25Q80A
Parameter
W25Q80BV
Unit
Typ
Max
Typ
Max
4 KB Sector Erase Time
0.09
0.3
0.03
0.2
sec
64KB Block Erase Time
0.5
2
0.15
1
sec
Chip (Bulk) Erase Time
8
20
2
6
sec
1.3
5
0.7
3
ms
Page Programming Time
5.2 KEY AC PARAMETER PERFORMANCE
EN25Q80A
W25Q80BV
tCH (serial clock high time)
Min @ 4ns
Min @ 4ns
tCL (serial clock low time)
Min @ 4ns
Min @ 4ns
tCLCH(serial clock rise time)
Min @ 0.1V / ns
Min @ 0.1V / ns
tCHCL(serial clock fall time)
Min @ 0.1V / ns
Min @ 0.1V / ns
tSLCH(CS# active setup time)
[email protected] 5ns
Min @ 5ns
tCHSH(CS# active hold time)
[email protected] 5ns
Min @ 5ns
Min @ 15ns for Read
Min @ 10ns for Read
Min @ 50ns for Write
Min @ 50ns for Write
tDSU(Data in setup time)
Min @ 2ns
Min @ 2ns
tDH(Data in hold time)
Min @ 5ns
Min @ 5ns
Parameter
tSHSL(CS# high time)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/12/15
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/12/15
www.eonssi.com