Eon Silicon Solution Inc. Page 1/4 EN29PL064 V.S. S29JL064H Specification Comparison 64Mbit (8 x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory Part No. : EN29PL064 Issued date : 2008 / 08 / 20 Prepared by : FAE EngineerBrian Hsieh Approval by : FAE ManagerJason Tseng This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 2/4 1. Part No. Eon : Spansion : EN29PL064 S29JL064H 2. Basic Features: The following features are identical with each other. JEDEC standard compatible pin-out and command sets. 2.7 – 3.6 Voltage Simultaneous Read/Write Operation. CFI (Common Flash Interface) compliant Erase Suspend / Resume Unlock Bypass Program WP# / ACC (Write Protect/Acceleration) High Voltage Sector Protection and Temporary Sector Unprotect This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 3/4 3. Autoselect Codes table Comparison: EON: Amax Description Device ID Manufacturer ID: Eon CE# OE# WE# L Read Cycle 1 L Read Cycle 2 L Read Cycle 3 L Sector Protection Verification Secured Silicon Indicator Bit (DQ7, DQ6) L L L L L L H H H H A5 to A12 A10 A9 BA X BA X SA X BA (See Note) X V ID VI D VI D VI D to A8 A7 A6 A4 A3 A2 A1 A0 H1 L X X X L L L X L X L L L L L X DQ15 to DQ0 001Ch L L L L L L L H 227Eh H H H L 2202h (PL064) 220Ah (PL032) H H H H 2201h (PL064) 2201h (PL032) L L H L 0001h (protected), 0000h (unprotected) L L H H 007Fh DQ6=1 (customer locked) Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don’t care. Spansion : This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20 Eon Silicon Solution Inc. Page 4/4 4. Difference Comparison Table: S29JL064H VID Pin to Pin Byte mode Page read Secure sector FlexBank Architecture EN29PL064 11.5 to 12.5 Yes for Word mode Yes (PIN47: Byte/word mode select) No 256 bytes 8.5 - 9.5 Yes No (PIN47:NC) 4-words 64 words 4 Banks: 8M, 24M, 24M, 8M 4 Banks: 8M, 24M, 24M, 8M Boot Sectors 4 Kword x 8 and 32 Kword x 15 4 Kword x 8 and 32 Kword x 15 CFI Program Suspend/Resume Multi sector erase Write Buffer Programming Yes. Spansion's CFI table Yes. EoN's CFI table No Yes Yes No No 32-word Write Buffer PPB Lock Bit No 48-pin TSOP 63 ball FBGA Yes Available package boot sectors at the top and bottom boot sectors at the top and bottom 48-pin TSOP 5. Conclusion It is no problem to replace S29JL064H by EN29PL064, if customer uses S29JL064H in Word mode. There is only one matter needing attention is Multi erase function. The customer must issue another sector erase command for the next sector to be erased after the previous one is completed for EN29PL064. The Page mode and 32 word programming write buffer will enhance flash performance. So EN29PL064 device is a good choice to fully replace S29JL064H. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. ©2005 Eon Silicon Solution Inc. www.essi.com.tw Rev. A, Issue Date: 2008/ 08/ 20