Eon Silicon Solution Inc. Migration Note EON Flash EN25F40 to EN25Q40 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from EON EN25F40 Flash to Eon EN25Q40 Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table is major features of these two devices. Features EN25Q40 EN25F40 voltage range 2.7 ~ 3.6 2.7 ~ 3.6 SPI frequency 100MHz (standard mode) 80MHz @ dual & quad mode 100MHz (standard mode) 256 Byte 256 Byte Secured Silicon Sector region Sector Architecture SPI mode Minimum endurance cycle Package Uniform 128 sectors of 4K byte / Uniform 128 sectors of 4K byte / 8 block of 64K byte 8 block of 64K byte Mode 0 / Mode 3 Mode 0 / Mode 3 100K 100K 8-pin SOP 150mil 8-pin SOP 200mil 8 contact VDFN 8-pin PDIP 8-pin SOP 150mil 8-pin SOP 200mil 8 contact VDFN 8-pin PDIP 2.2 The following table is pin comparison Pin number Pin1 Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 EN25Q40 CS# DO (DQ1) WP# (DQ2) VSS DI (DQ0) CLK NC (DQ3) VCC EN25F40 CS# DO WP# VSS DI CLK HOLD# VCC Note: If customers don’t use Hold# pin function on EN25F40, which can be replaced by EN25Q40 in standard SPI mode. EN25F40 only support general standard SPI mode. EN25Q40 can support general standard / dual / quad SPI mode. (Need specific SPI controller) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison Current EN25Q40 Typ Read ICC1 EN25F40 Unit Max Typ Max N/A 25 N/A 25 mA Write ICC2 N/A 18 N/A 15 mA Standby ICC3 N/A 5.0 N/A 5.0 μA 3.2 The 8 contact VDFN (5mmx6mm) package outline comparison Part No. Package Outline EN25Q40-100WIP 8 contact VDFN (5mmx6mm) D2 = 3.4 ± 0.1 EN25F40-100VIP 8 contact VDFN (5mmx6mm) D2 = 4.23 ± 0.1 For EN25Q40-100WIP, all of the parameters of 8 contact VDFN (5mmx6mm) package (for example: pin assignment, pin pitch, E, D, and E2 dimension etc.) are the same as the EN25F40-100VIP except D2 dimension (change from 4.23mm to 3.4mm). The customer can replace F40-100VIP with Q40-100WIP on PCB directly. The detail information please refers to the table and 8 contact VDFN (5mmx6mm) package outline are shown below. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Controlling dimensions are in millimeters (mm). Part No. SYMBOL EN25Q40-100WIP 8 contact VDFN (5mmx6mm) D2 = 3.4 ± 0.1 DIMENSION IN MM EN25F40-100VIP 8 contact VDFN (5mmx6mm) D2 = 4.23 ± 0.1 DIMENSION IN MM MIN. NOR MAX MIN. NOR MAX A 0.70 0.75 0.80 0.70 0.75 0.80 A1 0.00 0.02 0.04 0.00 0.02 0.04 A2 --- 0.20 --- --- 0.20 --- D 5.90 6.00 6.10 5.90 6.00 6.10 E 4.90 5.00 5.10 4.90 5.00 5.10 D2 3.30 3.40 3.50 4.13 4.23 4.33 E2 3.90 4.00 4.10 3.90 4.00 4.10 e --- 1.27 --- --- 1.27 --- b 0.35 0.40 0.45 0.35 0.40 0.45 L 0.55 0.60 0.65 0.55 0.60 0.65 Note : 1. Coplanarity: 0.1 mm This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS Except of memory type, (only difference on 9Fh command) there is no difference in Manufacture ID, Device ID 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) For EN25F40 For EN25Q40 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. Parameter EN25Q40 EN25F40 Unit Typ Max Typ Max Sector Erase Time 0.09 0.3 0.09 0.3 Sec Block Erase Time 0.5 2 0.5 2 Sec Chip Erase Time 3.5＊ 10 3.5＊ 10 Sec Page Programming Time 1.3 5 1.3 5 ms ＊NOTE: ERASE FROM “1” Æ “1”. 5.2 KEY AC PARAMETER PERFORMANCE EN25Q40 EN25F40 tCH (serial clock high time) Min@ 4ns Min@ 4ns tCL (serial clock low time) Min@ 4ns Min@ 4ns tCLCH(serial clock rise time) Min@ 0.1V / ns Min@ 0.1V / ns tCLCL(serial clock fall time) Min@ 0.1V / ns Min@ 0.1V / ns Min@ 5ns Min@ 5ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) Min@100ns Min@100ns tDSU(Data in setup time) Min@2ns Min@2ns tDH(Data in hold time) Min@5ns Min@5ns This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/8/17 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 Rev. A, Issue Date: 2009/ 08/17 ©2005 Eon Silicon Solution Inc. www.eonssi.com