Application Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
EON EN25Q32B
(Version : Preliminary 0.2)
vs
MXIC MX25L3235D
(Version : 1.4)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from MXIC
MX25L3235D Flash to Eon EN25Q32B Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
2.1 The following table highlights the major features of these two devices.
Features
Voltage range
Pin to pin
compatible
(standard SPI mode)
SPI mode
SPI frequency
(standard mode)
Sector architecture
Lockable OTP
security sector
Minimum
endurance cycle
Package
EN25Q32B
2.7 ~ 3.6V
8 pins SOP 200mil
8 contact VDFN (5 x 6mm)
16 pins SOP 300mil
Mode 0 / Mode 3
104MHz (standard mode)
80MHz @ dual & quad mode
Uniform
1024 sectors of 4K byte
64 blocks of 64K byte
MX25L3235D
2.7 ~ 3.6V
8-pin SOP 209mil
8-land WSON (6 x 5mm)
16-pin SOP 300mi
Mode 0 / Mode 3
104MHz (standard mode)
75MHz @ dual & quad mode
Uniform
1024 sectors of 4K byte
64 blocks of 64K byte
512 Byte
512 Byte
100K
100K
8 pins SOP 200mil
8 contact VDFN (5 x 6mm)
16 pins SOP 300mil
24 balls BGA (6 x 8mm)
8-pin SOP 209mil
8-land WSON (6 x 5mm, 8 x 6mm)
16-pin SOP 300mil
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
Current
Read ICC3
EN25Q32B
MX25L3235D
Max ( @ Single 104MHz) Max ( @Single 104MHz )
25
25
Unit
mA
Page Program (PP) ICC4
28
20
mA
Sector Erase (SE) ICC6
25
20
mA
Standby ICC1
20
20
A
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID,
D15~ID0: memory type, ID7~ID0: memory density) comparison.
For EN25Q32B
For MX25L3235D
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.2. Instruction set comparison
EN25Q32B
MX25L3235D does not support RSTEN, RST, Dual Output Fast Read instructions, and the
Enter OTP mode instruction for EN25Q32B is 3Ah while the instruction for MX25L3235D is
B1h.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
MX25L3235D
EN25Q32B does not support Continuously program mode, REMS2, REMS4, EXSO RDSCUR,
WRSCUR, ESRY, DSRY instructions.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.3 Different block protection area
The definition of block protection area is different.
EN25Q32B
MX25L3235D
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
4.4 Different RDSR bit definition
The definition of RDSR bit S6 and bit6 are different.
EN25Q32B
MX25L3235D
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN25Q32B
Parameter
MX25L3235D
Unit
Typ
Max
Typ
Max
Page programming time
0.8
5
1.4
5
ms
Sector erase time
0.05
0.3
0.06
0.3
sec
Block erase time
0.2
2
0.7
2
sec
Chip (Bulk) erase time
15
25
25
50
sec
5.2 KEY AC PARAMETER PERFORMANCE
EN25Q32B
MX25L3235D
tCH (serial clock high time)
Min @ 4ns
Min @ 4.7ns
tCL (serial clock low time)
Min @ 4ns
Min @ 4.7ns
tCLCH(serial clock rise time)
Min @ 0.1V / ns
Min @ 0.1V / ns
tCLCL(serial clock fall time)
Min @ 0.1V / ns
Min @ 0.1V / ns
[email protected] 5ns
Min @ 5ns
Min @ 50ns
Min @ 5ns
tDSU(Data in setup time)
Min @ 2ns
Min @ 2ns
tDH(Data in hold time)
Min @ 5ns
Min @ 5ns
Parameter
tCHSH(CS# active setup / hold time)
tSHSL(CS# high time)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2010/07/01
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2010/ 07/01
www.eonssi.com