Application Note vs - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
Eon Flash EN29GL128H/L
vs
SPANSION Flash S29GL128P (N)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from SPANSION
S29GL128P (N) Flash to Eon EN29GL128H/L Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
The following table highlights the major features of these two devices.
Features
voltage range
Pin to Pin
Page Access time
Read buffer length
Write buffer length
Sector Architecture
Byte/Word mode
Page read buffer length
Secured silicon sector
CFI Compliant
JEDEC Data# polling &
toggle bit
command
Erase
Suspend
/
Resume
Program Suspend
/
Resume
Minimum
cycle
Package
endurance
EN29GL128H/L
2.7 ~ 3.6
Compatible (for 56 TSOP)
Compatible (for 64 FBGA)
25ns
S29GL128P(N)
2.7 ~ 3.6
Compatible (for 56 TSOP)
Compatible (for 64 FBGA)
25ns
16 Byte
64 Byte
Uniform 128K Byte
Yes
16 Byte
256 Byte
Yes
16 Byte
64 Byte / 32 Byte @ N
Uniform 128K Byte
Yes
16 Byte
256 Byte
Yes
Yes
Yes
Yes
Yes
Yes
Yes
100K
100K
56-pin 14mm x 20mm TSOP
64 ball 11mm x13mm FBGA
56-pin 14mm x 20mm TSOP
64 ball 11mm x13mm FBGA
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE & PERFORMANCE CONSIDERATIONS
3.1 ICC comparison
Current
EN29GL128H/L
Typ
Read ICC1 (@5MHz)
S29GL128P(N)
Unit
Max
Typ
Max
15
30
30
55
mA
Write ICC2
20
30
50
90
mA
Standby ICC3
1.5
10
1
5
A
3.2 Max VID comparison
S29GL128P (N) VID range is 11.5V~12.5V. But EN29GL128H/L doesn’t support VID
function. Any voltage level higher than chip spec would damage the device, possibly.
(Using high voltage into autoselect mode)
3.3 Different VHH level (for accelerating programming functions)
EN29GL128H/L voltage level: 8.5V~9.5V.
S29GL128P (N) voltage level: 11.5~12.5V.
3.3 Different random access speed
EN29GL128H/L: 70ns @ full VCC range: 2.7V~3.6V.
S29GL128P (N): 100ns or 110 ns @ full VCC range / 90 ns. (When VCC is used
between 3.0V~3.6V)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Except of Manufacturer ID, Device Identifications are the same
For EN29GL128H/L: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID:
227Eh / 2221h / 2201h.
For S29GL128P (N): manufacture ID: 0001h, device ID: 227Eh / 2221h / 2201h.
4.2. Password protection commands
EN29GL128H/L: No support.
S29GL128P (N): Support.
4.3. Multi-sector erasure commands
EN29GL128H/L: No supported. (Users must issue another sector erase command for
the next sector to be erased after the previous one is completed)
S29GL128P (N): Support.
4.4. Different PPB protect range
EN29GL128H/L: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are
1 PPB per 4 sectors.
S29GL128P (N): A Persistent-Protection-Bit (PPB) is assigned to each block.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 Power-on and Reset Timings.
Parameter
tVCS
tRP1
tRP2
tRH
tRB1
tRB2
tREADY1
tREADY2
EN29GL128H/L S29GL128P(N)
Description
50µs
Vcc Setup Time (min)
RESET# Pulse Width (During
Embedded Algorithms)
RESET# Pulse Width (NOT During
Embedded Algorithms)
Reset# High Time Before Read
RY/BY# Recovery Time ( to CE#,
OE# go low)
RY/BY# Recovery Time ( to WE# go
low)
Reset# Pin Low (During Embedded
Algorithms) to Read or Write
Reset# Pin Low (NOT During
Embedded Algorithms) to Read or
Write
10us
500ns
50ns
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0ns
0ns
50ns
*None
20µs
35µ[email protected]
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500ns
35µ[email protected]
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Note*: There is no clear description in datasheet.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/6/16
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
Rev. A, Issue Date: 2009/ 06/16
©2005 Eon Silicon Solution Inc. www.eonssi.com