Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs SPANSION Flash S29GL128P (N) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from SPANSION S29GL128P (N) Flash to Eon EN29GL128H/L Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table highlights the major features of these two devices. Features voltage range Pin to Pin Page Access time Read buffer length Write buffer length Sector Architecture Byte/Word mode Page read buffer length Secured silicon sector CFI Compliant JEDEC Data# polling & toggle bit command Erase Suspend / Resume Program Suspend / Resume Minimum cycle Package endurance EN29GL128H/L 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) 25ns S29GL128P(N) 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) 25ns 16 Byte 64 Byte Uniform 128K Byte Yes 16 Byte 256 Byte Yes 16 Byte 64 Byte / 32 Byte @ N Uniform 128K Byte Yes 16 Byte 256 Byte Yes Yes Yes Yes Yes Yes Yes 100K 100K 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE & PERFORMANCE CONSIDERATIONS 3.1 ICC comparison Current EN29GL128H/L Typ Read ICC1 (@5MHz) S29GL128P(N) Unit Max Typ Max 15 30 30 55 mA Write ICC2 20 30 50 90 mA Standby ICC3 1.5 10 1 5 A 3.2 Max VID comparison S29GL128P (N) VID range is 11.5V~12.5V. But EN29GL128H/L doesn’t support VID function. Any voltage level higher than chip spec would damage the device, possibly. (Using high voltage into autoselect mode) 3.3 Different VHH level (for accelerating programming functions) EN29GL128H/L voltage level: 8.5V~9.5V. S29GL128P (N) voltage level: 11.5~12.5V. 3.3 Different random access speed EN29GL128H/L: 70ns @ full VCC range: 2.7V~3.6V. S29GL128P (N): 100ns or 110 ns @ full VCC range / 90 ns. (When VCC is used between 3.0V~3.6V) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Except of Manufacturer ID, Device Identifications are the same For EN29GL128H/L: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID: 227Eh / 2221h / 2201h. For S29GL128P (N): manufacture ID: 0001h, device ID: 227Eh / 2221h / 2201h. 4.2. Password protection commands EN29GL128H/L: No support. S29GL128P (N): Support. 4.3. Multi-sector erasure commands EN29GL128H/L: No supported. (Users must issue another sector erase command for the next sector to be erased after the previous one is completed) S29GL128P (N): Support. 4.4. Different PPB protect range EN29GL128H/L: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are 1 PPB per 4 sectors. S29GL128P (N): A Persistent-Protection-Bit (PPB) is assigned to each block. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings. Parameter tVCS tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 EN29GL128H/L S29GL128P(N) Description 50µs Vcc Setup Time (min) RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write 10us 500ns 50ns 35us@P 50us@N 35us@P 500ns@N 35us@P 500ns@N 200ns@P 50ns@N 0ns 0ns 50ns *None 20µs 35µs@P 20us@N 500ns 35µs@P 500ns@N Note*: There is no clear description in datasheet. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/6/16 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com