Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from NUMONYX M29W128G Flash to Eon EN29GL128H/L Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table highlights the major features of these two devices. Features voltage range Pin to Pin Page Access time Fast random access time Write buffer length Sector Architecture Byte/Word mode Page read buffer length Secured silicon sector CFI Compliant JEDEC Data# polling & toggle bit command Erase Suspend / Resume Program Suspend / Resume Minimum cycle Package endurance EN29GL128H/L 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) 25ns M29W128G 2.7 ~ 3.6 Compatible (for 56 TSOP) Compatible (for 64 FBGA) 25ns / 30ns 70ns 70ns 64 Byte Uniform 128K Byte Yes 16 Byte 256 Byte Yes 64 Byte Uniform 128K Byte Yes 16 Byte 256 Byte Yes Yes Yes Yes Yes Yes Yes 100K 100K 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE & PERFORMANCE CONSIDERATIONS 3.1 ICC comparison Current EN29GL128H/L Typ Read ICC1 (@5MHz) M29W128G Unit Max Typ Max 15 30 *None 10 mA Write ICC2 20 30 1 10 mA Standby ICC3 1.5 10 *None 100 A Note*: There is no clear description in datasheet. 3.2 Max VID comparison M29W128G VID range is 11.5V~12.5V. But EN29GL128H/L doesn’t support VID function. Any voltage level higher than chip spec would damage the device, possibly. (Using high voltage into autoselect mode) 3.3 Different VHH level (for accelerating programming functions) EN29GL128H/L voltage level: 8.5V~9.5V. M29W128G voltage level: 11.4~12.6V. 3.4 Different VLKO range EN29GL128H/L voltage level: 2.3V~2.5V. M29W128G voltage level: 1.8V~2.5V. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Except of Manufacturer ID, Device Identifications are the same For EN29GL128H/L: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID: 227Eh / 2221h / 2201h. For M29W128G: manufacture ID: 0020h, device ID: 227Eh / 2221h / 2201h (M29W128GH) or 2200h. (M29W128GL) 4.2. Password protection commands EN29GL128H/L: No support. M29W128G: Support. 4.3. Multi-sector erasure commands EN29GL128H/L: No supported. (Users must issue another sector erase command for the next sector to be erased after the previous one is completed) M29W128G: Support. 4.4. Different PPB protect range EN29GL128H/L: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are 1 PPB per 4 sectors. M29W128G: A non-volatile protection bit (NVPB) is assigned to each block. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings Parameter Description EN29GL128H/L M29W128G tVCS Vcc Setup Time (min) RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write 50µs 50µs 10us 10µs 500ns *None 50ns 50ns 0ns 0ns 50ns 50ns 20µs 20µs 500ns *None tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Note*: There is no clear description in datasheet. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/6/16 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2009/ 06/16 ©2005 Eon Silicon Solution Inc. www.eonssi.com