Eon Silicon Solution Inc. Migration Note EON Flash EN25F16 to EN25Q16A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from EON EN25F16 Flash to Eon EN25Q16A Flash. 2. GENERAL FUNCTION COMPARISON TABLE: 2.1 The following table is major features of these two devices. Features EN25Q16A EN25F16 Voltage range 2.7 ~ 3.6 2.7 ~ 3.6 SPI frequency 104MHz (standard mode) 80MHz @ dual & quad mode 100MHz (standard mode) 512 Byte 128 Byte Secured Silicon Sector region Sector Architecture SPI mode Uniform 512 sectors of 4K byte Uniform 512 sectors of 4K byte / 32 block of 64K byte / 32 block of 64K byte Mode 0 / Mode 3 Mode 0 / Mode 3 EQIO mode (Full Quad mode) Software Reset Dual Output Fast Read Dual I/O Fast Read Quad I/O Fast Read Page program Sector Erase 4K byte Block (Sector) Erase 64K byte BP table Minimum endurance cycle Package Yes No Yes Yes Yes Yes Yes Yes No No No No Yes Yes Yes Yes Enhanced protect (Note) Conventional 100K 100K 8-pin SOP 150mil 8-pin SOP 200mil 8 contact VDFN 8-pin PDIP 8-pin SOP 150mil 8-pin SOP 200mil 8 contact VDFN 8-pin PDIP Note: Please refer to page 5 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 2.2 The following table is pin comparison Pin number Pin1 Pin2 Pin3 Pin4 Pin5 Pin6 Pin7 Pin8 EN25Q16A CS# DO (DQ1) WP# (DQ2) VSS DI (DQ0) CLK NC (DQ3) VCC EN25F16 CS# DO WP# VSS DI CLK HOLD# VCC Note: If customers don’t use Hold# pin function on EN25F16, which can be replaced by EN25Q16A in standard SPI mode. EN25F16 only support general standard SPI mode. EN25Q16A can support general standard / dual / quad SPI mode. (Need specific SPI controller) 3. HARDWARE CONSIDERATIONS 3.1 ICC comparison Current EN25Q16A EN25F16 Unit Read ICC3 Max 25 Max 25 mA Page Program (PP) ICC4 28 28 mA Sector Erase (SE) ICC6 25 25 mA Standby ICC1 20 20 μA This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS Except of memory type, (only difference on 9Fh command) there is no difference in Manufacture ID, Device ID 4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID, D15~ID0: memory type, ID7~ID0: memory density) For EN25Q16A For EN25F16 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4.2 Instruction Set Comparison 4.2.1 Different Block Protection Area EN25Q16A： EN25F16： This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4.2.2 Different RDSR bit definition EN25Q16A： EN25F16： This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4.2.3 Secured OTP Addresses EN25Q16A： EN25F16： This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4.3 Software Reset There is a new function “Software Reset” in EN25Q16A, which can put the device in normal operating Ready mode. Figure 1. Reset-Enable and Reset Sequence Diagram Figure 2 . Reset-Enable and Reset Sequence Diagram under EQIO Mode This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 ERASE AND PROGRAM PERFORMANCE The erasing and programming performance comparison. Parameter EN25Q16A EN25F16 Unit Typ Max Typ Max Sector Erase Time 0.05 0.3 0.09 0.3 Sec Block Erase Time 0.2 2 0.4 2 Sec Chip Erase Time 6＊ 12 7＊ 35 Sec 0.8 5 1.3 5 ms Page Programming Time ＊NOTE: ERASE FROM “1” Æ “1”. 5.2 KEY AC PARAMETER PERFORMANCE EN25Q16A EN25F16 tCH (serial clock high time) Min@ 4ns Min@ 4ns tCL (serial clock low time) Min@ 4ns Min@ 4ns tCLCH(serial clock rise time) Min@ 0.1V / ns Min@ 0.1V / ns tCLCL(serial clock fall time) Min@ 0.1V / ns Min@ 0.1V / ns Min@ 5ns Min@ 5ns Parameter tCHSH(CS# active setup / hold time) tSHSL(CS# high time) Min, read @15ns Program/Erase @50ns Min@100ns tDSU(Data in setup time) Min@2ns Min@2ns tDH(Data in hold time) Min@5ns Min@5ns This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 9 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/10/14 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 10 Rev. A, Issue Date: 2010/10/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com