Eon Silicon Solution Inc. Migration Note Eon Flash EN25F80A-C3H to EN25Q80A-C3H This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The EN25Q80A-C3H support Standard, Dual and Quad SPI. The application note introduces the difference between Known Good Die EN25F80A-C3H and EN25Q80A-C3H. 2. GENERAL FUNCTION COMPARISON TABLE: The following table is major features of these two devices. Features EN25F80A-C3H EN25Q80A-C3H (SPI mode) 2.7 ~ 3.6 2.7 ~ 3.6 Pin to Pin Yes Yes (Hold# pin is NC*) clock rate(MHz) 100 100 4-Kbyte Uniform 4K byte sector, 64K byte Block, Chip erase 4-Kbyte Uniform 4K byte sector, 64K byte Block, Chip erase 256 bytes page program 256 bytes page program Lockable 256 byte Lockable 256 byte None, Upper 1/16, 1/8, 1/4,1/2 and All None,Lower 127/128, 63/64, 31/32, 15/16, 7/8, 3/4 and All voltage range (V) Sector size Erase feature Program feature OTP security sector Protected Area Organization Note: NC is no connected internal. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. PHYSICAL SPECIFICATIONS COMPARISON TABLE: Items EN25F80A EN25Q80A Die Size X =2230um = 87.79mil Y = 2162um = 85.11mil XY= 7.47K mil2 X = 1824um = 71.81mil Y=1816um=71.49mil XY= 5.133K mil2 Window size X = 2144 um Y = 2076 um X= 1738um Y = 1730 um Scribe Line Width X-direction: 86um = 3.38mil Y-direction: 86um = 3.38mil In x-direction: 86um = 3.38mil In y-direction: 86um = 3.38mil PAD SIZE Pad Count 68 um X 68 um 68 um X 68 um 11 10 Without grinding: 725 um ±15 um Minimum grinding thickness: 200 um Without grinding: 725 um ±15 um Minimum grinding thickness: 200 um Die Thickness This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. DIE PAD LOCATIONS COMPARISON: The X direction of EN25Q80A rotate 180 than EN25F80A. Note: WB1PAD is NC pin. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PAD COORDINATES COMPARISON TABLE: EN25F80A PAD COORDINATES PAD HOLDBPAD (HOLD#) VCC VCC SBPAD (CS#) QPAD (DO) BOTTOM X -952.52 -796.97 -710.99 851.09 952.53 Y -941.57 -961.83 -961.83 -960.82 -939.03 PAD DPAD (DI) CPAD (CLK) WB1PAD (NC) GND GND WBPAD (WP#) LOGO TOP X -975.69 -975.69 -975.69 725.51 811.17 949.91 976.66 Y 930.79 829.36 743.7 954.57 954.57 936.57 -866.9 Note: WB1PAD is NC pin. EN25Q80A PAD COORDINATES PAD HOLDBPAD (NC)* VCC VCC SBPAD (CS#) QPAD (DO) TOP X 771.09 629.15 541.15 -667.35 -776.09 Y 784.51 796.46 796.46 796.46 784.51 PAD CPAD (CLK) DPAD (DI) GND GND WBPAD (WP#) LOGO BOTTOM X 794.95 794.95 -549.55 -634.55 -748.12 -555 Y -673.75 -769.72 -797 -797 -786.05 -711 Note: HOLDBPAD is NC pin. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 6. SOFTWARE CONSIDERATIONS 6.1 Software command: EN25Q80A remove 52h for Block Erase command. Command EN25F80A EN25Q80A Block Erase D8h / 52h D8h 6.2 Protected Area Sizes Sector Organization Comparison: The protected area definition is different. Please refer to below table. EN25F80A: EN25Q80A: This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 7. PERFORMANCE DIFFERENCES The erasing and programming performance comparison. EN25F80A EN25Q80A Typ Max Typ Max Page Programming Time 1.5 5 1.3 5 mS Sector Erase Time 0.15 0.3 0.09 0.3 Sec Block Erase Time 0.8 2 0.4 2 Sec Chip Erase Time 10 20 7 20 Sec Parameter This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 7 Rev.A, Issue Date: 2009/ 05/ 27 Unit ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2009/5/27 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 8 Rev.A, Issue Date: 2009/ 05/ 27 ©2005 Eon Silicon Solution Inc. www.eonssi.com