Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs MXIC Flash MX29GL640E/H/L/T/B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from MXIC MX29GL640E/H/L/T/B Flash to Eon EN29GL064H/L/T/B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table highlights the major features of these two devices. Features voltage range Pin to Pin Page Access time Random access time Read buffer length Write buffer length Sector Architecture Byte/Word mode Secured silicon sector CFI Compliant JEDEC Data# polling & toggle bit command Erase Suspend / Resume Program Suspend / Resume Minimum cycle Package endurance EN29GL064H/L/T/B MX29GL640E/H/L/T/B 2.7 ~ 3.6 2.7 ~ 3.6 Compatible (for 48 / 56 TSOP) Compatible (for 48 / 56 TSOP) Compatible (for 64 FBGA) Compatible (for 64 FBGA) 25ns 25ns 70ns 90ns 16 Byte 16 Byte 32 Byte 32 Byte Uniform 64K Byte @ H / L Uniform 64K Byte @H / L 8 x 8K Byte boot sectors + 8 x 8K Byte boot sectors + 127 127 x 64K Byte sector @ T/ B x 64K Byte sector @T / B Yes Yes 256 Byte 256 Byte Yes Yes Yes Yes Yes Yes Yes Yes 100K 100K 48-pin 12mm x 20mm TSOP 56-pin 14mm x 20mm TSOP 64-ball 11mm x 13mm FBGA 48-pin 12mm x 20mm TSOP 56-pin 14mm x 20mm TSOP 64 ball 11mm x 13mm FBGA Note: EN29GL064H: The highest address sector protected when WP#/ACC = “L”. EN29GL064L: The Lowest address sector protected when WP#/ACC = “L”. EN29GL064T: Top boot sector EN29GL064B: Bottom boot sector. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE & PERFORMANCE CONSIDERATIONS 3.1 ICC comparison Current EN29GL064H/L/T/B Typ Read ICC1 (@5MHz) MX29GL640E/H/L/T/B Unit Max Typ Max 15 30 30 50 mA Write ICC2 20 30 26 30 mA Standby ICC3 1.5 10 30 100 μA 3.2 Max VID comparison MX29GL640E/H/L/T/B VID range is 9.5V ~ 10.5V. But EN29GL064H/L/T/B doesn’t support VID function. Any voltage level higher than chip spec would damage the device, possibly. (Using high voltage on Address9 enters autoselect mode) 3.3 Different VHH level (for accelerating programming functions) EN29GL064H/L/T/B voltage level: 8.5V ~ 9.5V. MX29GL640E/H/L/T/B voltage level: 9.5 ~ 10.5V. 3.4 Different VIO level (for adjusting different I/O voltage range) EN29GL064H/L/T/B voltage level: 1.65V ~ 3.6V. MX29GL640E/H/L/T/B voltage level: 2.7V ~ 3.6V. 3.5 Different random access speed EN29GL064H/L/T/B: 70ns @ full VCC range: 2.7V ~ 3.6V. MX29GL640E/H/L/T/B: 90ns @ full VCC range: 2.7V ~ 3.6V. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Manufacturer ID, Device Identifications comparison Eon MXIC Manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”). Manufacture ID: 00C2h Part No. Device ID Part No. Device ID EN29GL064H (Uniform, highest address sector protected) 227Eh / 220Ch / 2201h MX29GL640EH (Uniform, highest address 227Eh / 220Ch / 2201h sector protected) EN29GL064L (Uniform, lowest address sector protected) 227Eh / 220Ch / 2201h MX29GL640EL (Uniform, lowest address 227Eh / 220Ch / 2201h sector protected) EN29GL064T (Top boot) 227Eh / 2210h / 2201h MX29GL640ET (Top boot) 227Eh / 2210h / 2201h EN29GL064B (Bottom Boot) 227Eh / 2210h / 2200h MX29GL640EB (Bottom Boot) 227Eh / 2210h / 2200h 4.2. Password protection commands EN29GL064H/L/T/B: No support. MX29GL640E/H/L/T/B: Support. 4.3. Multi-sector erasure commands EN29GL064H/L/T/B: No supported. (Users must issue another sector erase command for the next sector to be erased after the previous one is completed) MX29GL640E/H/L/T/B: Support. 4.4. Different PPB protect range EN29GL064H/L: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are 1 PPB per 4 sectors. EN29GL064T: Sector 0~123 are 1 PPB per 4 sectors. Sector 124~134 have PPB for each boot sector. EN29GL064B: Sector 0~10 have PPB for each boot sector. Sector 11~134 are 1 PPB per 4 sectors. MX29GL640EH/L/T/B: A Solid Write Protection Bit (SPB) is assigned to each block. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings. EN29GL064H/L/T/B MX29GL640E/H/L/T/B Parameter Description tVCS Vcc Setup Time (min) RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 50µs 500us 10us 10us 500ns 500ns 50ns 200ns 0ns 0ns 50ns 50ns 20µs 20us 500ns 500ns 5 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description A B Date Initial Release 2009/07/21 Update 4.1 Manufacturer ID, Device Identifications comparison 2011/02/10 on page 4 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. B, Issue Date: 2011/ 02/10 ©2005 Eon Silicon Solution Inc. www.eonssi.com