Application Note vs - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
Eon Flash EN29GL064H/L/T/B
vs
SPANSION Flash S29GL032N
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from SPANSION
S29GL032N Flash to Eon EN29GL064H/L/T/B Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
The following table highlights the major features of these two devices.
Features
voltage range
Pin to Pin
Page Access time
Random access time
Read buffer length
Write buffer length
Sector Architecture
Byte/Word mode
Secured silicon sector
CFI Compliant
JEDEC Data# polling &
toggle bit command
Erase Suspend /
Resume
Program Suspend /
Resume
Minimum endurance
cycle
Package
EN29GL064H/L/T/B
2.7 ~ 3.6
S29GL032N
2.7 ~ 3.6
Compatible (for 48 / 56 TSOP)
Compatible (for 48 / 56 TSOP)
Compatible (for 64 FBGA)
Compatible (for 64 FBGA)
Pin A21 NC
25ns
25ns
70ns
90ns /100ns / 100ns
16 Byte
32 Byte
Uniform 64K Byte
Yes
256 Byte
Yes
16 Byte @N (8 Byte @A & M)
32 Byte
Uniform 64K Byte
Yes
256 Byte
Yes
Yes
Yes
Yes
Yes
Yes
Yes
100K
100K
48-pin 12mm x 20mm TSOP
56-pin 14mm x 20mm TSOP
64 ball 11mm x13mm FBGA
48-pin 12mm x 20mm TSOP
56-pin 14mm x 20mm TSOP
64 ball 11mm x13mm FBGA
Note:
EN29GL064H: The highest address sector protected when WP#/ACC = “L”.
EN29GL064L: The Lowest address sector protected when WP#/ACC = “L”.
EN29GL064T: Top boot sector, EN29GL064B: Bottom boot sector.
To replace EN29GL064 to S29GL032N, please make sure Pin A21 must be pull high or low.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE & PERFORMANCE CONSIDERATIONS
3.1 ICC comparison
Current
EN29GL064H/L/T/B
Typ
Max
Read ICC1 (@5MHz)
15
30
Write ICC2
20
Standby ICC3
1.5
S29GL032N
Typ
Unit
30
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[email protected]
[email protected]
50
Max
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[email protected]
[email protected]
60
mA
10
1
5
μA
mA
3.2 Max VID comparison
S29GL032N VID range is 11.5V ~ 12.5V. But EN29GL064H/L/T/B doesn’t support VID
function. Any voltage level higher than chip spec would damage the device, possibly.
(Using high voltage on Address9 enters autoselect mode)
3.3 Different VHH level (for accelerating programming functions)
EN29GL064H/L/T/B voltage level: 8.5V ~ 9.5V.
S29GL032N voltage level: 11.5 ~ 12.5V.
3.4 Different VIO level (for adjusting different I/O voltage range)
EN29GL064H/L/T/B voltage level: 1.65V ~ 3.6V.
S29GL032N: 1.65V ~ 3.6V.
3.5 Different random access speed
EN29GL064H/L/T/B: 70ns @ full VCC range: 2.7V ~ 3.6V.
S29GL032N: 100ns or 110 ns @ full VCC range / 90 ns. (When VCC is used between
3.0V ~ 3.6V)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Except of Manufacturer ID, Device Identifications are the same
For EN29GL064H/L/T/B: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID:
227Eh / 220Ch(H, L), 2210h(T, B) / 2201h(H/L),2201(T), 2200(B).
For S29GL032N: manufacture ID: 0001h, device ID: 227Eh / 221Dh(01, 02, V1, V2),
221Ah (03, 04) / 2201h (03), 2200 (01, 02, V1, V2, 04.)
4.2. Password protection commands
EN29GL064H/L/T/B: No support.
S29GL032N: Support.
4.3. Multi-sector erasure commands
EN29GL064H/L/T/B: No supported. (Users must issue another sector erase command
for the next sector to be erased after the previous one is completed)
S29GL032N: Support.
4.4. Different PPB protect range
EN29GL064H/L/T/B: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123
are 1 PPB per 4 sectors.
S29GL032N: A Persistent-Protection-Bit (PPB) is assigned to each block.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 Power-on and Reset Timings.
Parameter
Description
EN29GL064H/L/T/B
S29GL032N
tVCS
Vcc Setup Time (min)
RESET# Pulse Width (During
Embedded Algorithms)
RESET# Pulse Width (NOT During
Embedded Algorithms)
Reset# High Time Before Read
RY/BY# Recovery Time ( to CE#,
OE# go low)
RY/BY# Recovery Time ( to WE#
go low)
Reset# Pin Low (During
Embedded Algorithms) to Read or
Write
Reset# Pin Low (NOT During
Embedded Algorithms) to Read or
Write
50µs
50µs
10µs
500ns
500ns
500ns
50ns
50ns
0ns
0ns
50ns
*None
20µs
20µs
500ns
500ns
tRP1
tRP2
tRH
tRB1
tRB2
tREADY1
tREADY2
Note*: There is no clear description in datasheet.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2010/9/14
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
Rev. A, Issue Date: 2010/ 09/14
©2005 Eon Silicon Solution Inc. www.eonssi.com