Eon Silicon Solution Inc. Application Note Eon Flash EN29GL064H/L/T/B vs SPANSION Flash S29GL032N This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 1. INTRODUCTION The application note introduces how to implement a system design from SPANSION S29GL032N Flash to Eon EN29GL064H/L/T/B Flash. 2. GENERAL FUNCTION COMPARISON TABLE: The following table highlights the major features of these two devices. Features voltage range Pin to Pin Page Access time Random access time Read buffer length Write buffer length Sector Architecture Byte/Word mode Secured silicon sector CFI Compliant JEDEC Data# polling & toggle bit command Erase Suspend / Resume Program Suspend / Resume Minimum endurance cycle Package EN29GL064H/L/T/B 2.7 ~ 3.6 S29GL032N 2.7 ~ 3.6 Compatible (for 48 / 56 TSOP) Compatible (for 48 / 56 TSOP) Compatible (for 64 FBGA) Compatible (for 64 FBGA) Pin A21 NC 25ns 25ns 70ns 90ns /100ns / 100ns 16 Byte 32 Byte Uniform 64K Byte Yes 256 Byte Yes 16 Byte @N (8 Byte @A & M) 32 Byte Uniform 64K Byte Yes 256 Byte Yes Yes Yes Yes Yes Yes Yes 100K 100K 48-pin 12mm x 20mm TSOP 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA 48-pin 12mm x 20mm TSOP 56-pin 14mm x 20mm TSOP 64 ball 11mm x13mm FBGA Note: EN29GL064H: The highest address sector protected when WP#/ACC = “L”. EN29GL064L: The Lowest address sector protected when WP#/ACC = “L”. EN29GL064T: Top boot sector, EN29GL064B: Bottom boot sector. To replace EN29GL064 to S29GL032N, please make sure Pin A21 must be pull high or low. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 2 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 3. HARDWARE & PERFORMANCE CONSIDERATIONS 3.1 ICC comparison Current EN29GL064H/L/T/B Typ Max Read ICC1 (@5MHz) 15 30 Write ICC2 20 Standby ICC3 1.5 S29GL032N Typ Unit 30 18@A 25@N 25@M 50 Max 25@A 30@N 35@M 60 mA 10 1 5 μA mA 3.2 Max VID comparison S29GL032N VID range is 11.5V ~ 12.5V. But EN29GL064H/L/T/B doesn’t support VID function. Any voltage level higher than chip spec would damage the device, possibly. (Using high voltage on Address9 enters autoselect mode) 3.3 Different VHH level (for accelerating programming functions) EN29GL064H/L/T/B voltage level: 8.5V ~ 9.5V. S29GL032N voltage level: 11.5 ~ 12.5V. 3.4 Different VIO level (for adjusting different I/O voltage range) EN29GL064H/L/T/B voltage level: 1.65V ~ 3.6V. S29GL032N: 1.65V ~ 3.6V. 3.5 Different random access speed EN29GL064H/L/T/B: 70ns @ full VCC range: 2.7V ~ 3.6V. S29GL032N: 100ns or 110 ns @ full VCC range / 90 ns. (When VCC is used between 3.0V ~ 3.6V) This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 3 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 4. SOFTWARE CONSIDERATIONS 4.1 Except of Manufacturer ID, Device Identifications are the same For EN29GL064H/L/T/B: manufacture ID: 007Fh (A8 = “0”), 001Ch (A8 = “1”); device ID: 227Eh / 220Ch(H, L), 2210h(T, B) / 2201h(H/L),2201(T), 2200(B). For S29GL032N: manufacture ID: 0001h, device ID: 227Eh / 221Dh(01, 02, V1, V2), 221Ah (03, 04) / 2201h (03), 2200 (01, 02, V1, V2, 04.) 4.2. Password protection commands EN29GL064H/L/T/B: No support. S29GL032N: Support. 4.3. Multi-sector erasure commands EN29GL064H/L/T/B: No supported. (Users must issue another sector erase command for the next sector to be erased after the previous one is completed) S29GL032N: Support. 4.4. Different PPB protect range EN29GL064H/L/T/B: Sector 0~3 and 124~127 have PPB for each sector. Sector 4~123 are 1 PPB per 4 sectors. S29GL032N: A Persistent-Protection-Bit (PPB) is assigned to each block. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 4 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. 5. PERFORMANCE DIFFERENCES 5.1 Power-on and Reset Timings. Parameter Description EN29GL064H/L/T/B S29GL032N tVCS Vcc Setup Time (min) RESET# Pulse Width (During Embedded Algorithms) RESET# Pulse Width (NOT During Embedded Algorithms) Reset# High Time Before Read RY/BY# Recovery Time ( to CE#, OE# go low) RY/BY# Recovery Time ( to WE# go low) Reset# Pin Low (During Embedded Algorithms) to Read or Write Reset# Pin Low (NOT During Embedded Algorithms) to Read or Write 50µs 50µs 10µs 500ns 500ns 500ns 50ns 50ns 0ns 0ns 50ns *None 20µs 20µs 500ns 500ns tRP1 tRP2 tRH tRB1 tRB2 tREADY1 tREADY2 Note*: There is no clear description in datasheet. This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 5 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com Eon Silicon Solution Inc. Revisions List Revision No Description Date A 2010/9/14 Initial Release This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 6 Rev. A, Issue Date: 2010/ 09/14 ©2005 Eon Silicon Solution Inc. www.eonssi.com