Application Note - Eon Silicon Solution Inc.

Eon Silicon Solution Inc.
Application Note
EON EN25Q16
vs
Winbond W25Q16BV
Specification Comparison
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
1. INTRODUCTION
The application note introduces how to implement a system design from Winbond
W25Q16BV Flash to Eon EN25Q16 Flash.
2. GENERAL FUNCTION COMPARISON TABLE:
2.1 The following table highlights the major features of these two devices.
Features
Voltage Range
Pin to Pin
Compatible
(Quad mode)
SPI frequency
(standard / dual /
quad mode)
Secured Silicon
Sector Region
EN25Q16
2.7 ~ 3.6
8-pins SOP 150mil / 208mil
8 contact VDFN (5x6mm)
8-pin DIP
W25Q16BV
2.7 ~ 3.6
8-pin SOP 150mil / 208mil
8-Pad WSON (5x6mm)
8-Pin DIP
100MHz / 80MHz / 80MHz
104MHz / 80MHz / 80MHz
128 Byte
64 Bit (8 Byte)
Sector
Architecture
Uniform
512 Sectors of 4 K byte
32 blocks of 64 K byte
SPI mode
Mode 0 / Mode 3
Uniform
512 sectors of 4 K byte
32 blocks of 64 K byte
64 blocks of 32 K byte
Mode 0 / Mode 3
Minimum
Endurance Cycle
100K
100K
Package
8-pins SOP 150mil / 208mil
8 contact VDFN (5x6mm)
8-pin DIP
8-pin SOP 150mil / 208mil
8-Pad WSON (5x6mm)
8-Pin DIP
16-pin SOP 300mil
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
3. HARDWARE CONSIDERATIONS
3.1 ICC comparison
EN25Q16
W25Q16BV
Read ICC3
Max
25
Max
18
Page Program (PP) ICC4
28
25
mA
Sector Erase (SE) ICC6
25
25
mA
Standby ICC1
5.0
50
A
Current
Unit
mA
3.2 Pin Configuration
Pin number
Pin1
Pin2
Pin3
Pin4
Pin5
Pin6
Pin7
Pin8
EN25Q16
CS#
DO (DQ1)
WP# (DQ2)
VSS
DI(DQ0)
CLK
NC(DQ3)
VCC
W25Q16BV
CS#
DO(IO1)
WP#(IO2)
VSS
DI(IO0)
CLK
Hold/(IO3)
VCC
Note:
For the pin Configuration of 8 pin SOP and VDFN (5x6mm) package, Eon EN25Q16 Flash is the same
as Winbond W25Q16BV Flash when using Quad Mode function only.
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
3
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
4. SOFTWARE CONSIDERATIONS
4.1 Manufacturer, Memory Type & Device Identification (M7~M0: manufacture ID,
D15~ID0: memory type, ID7~ID0: memory density) comparison.
For EN25Q16
OP Code
(M7-M0)
(ID15-ID0)
ABh
(ID7-ID0)
14h
90h
1Ch
9Fh
1Ch
14h
3015h
For W25Q16BV
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
4.2. Instruction Set Comparison
4.2.1 Different Read Status Register command
EN25Q16 Only support 05h command. (for register bit 7~ bit0)
W25Q16BV
Support 05h (for register bit 7~ bit0) and 35h. (for register bit 8 ~ bit 15)
4.2.2 Different Read Status Register length
EN25Q16 8 bit. (bit7 ~ bit 0)
W25Q16BV
16 bit. (Bit 15 ~ bit0)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
4.2.3 Quad page program command
EN25Q16 No support.
W25Q16BV
Support.
4.2.4 Different block erase command
EN25Q16 Only support D8h command. (for 64K byte)
W25Q16BV
Support 52h (for 32K byte) and D8h commands. (for 64K Byte)
4.2.5 Erase suspend / resume commands
EN25Q16 No support.
W25Q16BV
Support.
4.2.6 Continue read mode reset commands (for Dual / Quad operation)
EN25Q16 No support.
W25Q16BV
Support.
4.2.7 Fast read quad output command
EN25Q16 No support.
W25Q16BV
Support.
4.2.8 Word read for quad I/O command
EN25Q16 No support.
W25Q16BV
Support.
4.2.9 Octal word read for quad I/O command
EN25Q16 No support.
W25Q16BV
Support.
4.2.10 Different block protect definition
EN25Q16 :
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
W25Q16BV :
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
5. PERFORMANCE DIFFERENCES
5.1 ERASE AND PROGRAM PERFORMANCE
The erasing and programming performance comparison.
EN25Q16
Parameter
W25Q16BV
Unit
Typ
Max
Typ
Max
4 KB Sector Erase Time
0.09
0.3
0.03
0.2
sec
64KB Block Erase Time
0.4
2
0.15
1
sec
Chip (Bulk) Erase Time
12
35
3
10
sec
Page Programming Time
1.3
5
0.7
3
ms
5.2 KEY AC PARAMETER PERFORMANCE
EN25Q16
W25Q16BV
tCH (serial clock high time)
Min @ 4ns
Min @ 4.5ns
tCL (serial clock low time)
Min @ 4ns
Min @ 4.5ns
tCLCH(serial clock rise time)
Min @ 0.1V / ns
Min @ 0.1V / ns
tCLCL(serial clock fall time)
Min @ 0.1V / ns
Min @ 0.1V / ns
[email protected] 5ns
Min @ 5ns
Min @ 15ns for Read
Min @ 7ns for Read
Min @ 50ns for Write
Min @ 40ns for Write
tDSU(Data in setup time)
Min @ 2ns
Min @ 1.5ns
tDH(Data in hold time)
Min @ 5ns
Min @ 4ns
Parameter
tCHSH(CS# active setup / hold time)
tSHSL(CS# high time)
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
8
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com
Eon Silicon Solution Inc.
Revisions List
Revision No Description
Date
A
2009/6/24
Initial Release
This Application Note may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2005 Eon Silicon Solution Inc.
Rev. A, Issue Date: 2009/ 06/24
www.eonssi.com