2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5954 and 2N6372 series devices are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PD TJ, Tstg JC 2N5954 2N6372 90 90 85 80 2N5955 2N6373 70 70 65 60 5.0 6.0 2.0 40 -65 to +200 4.3 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5954 2N5955 2N6372 2N6373 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICEV VCE=85V, VBE=1.5V, RBE=100Ω 100 ICEV VCE=65V, VBE=1.5V, RBE=100Ω 100 ICEV VCE=45V, VBE=1.5V, RBE=100Ω ICEV VCE=85V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0 ICEV VCE=65V, VBE=1.5V, RBE=100Ω, TC=150°C 2.0 ICEV VCE=45V, VBE=1.5V, RBE=100Ω, TC=150°C ICER VCE=75V 100 ICER VCE=55V 100 ICER VCE=35V ICEO VCE=65V 1.0 ICEO VCE=45V 1.0 ICEO VCE=25V IEBO VBE=5.0V 0.1 0.1 BVCEV IC=100mA, VBE=1.5V, RBE=100Ω 90 70 BVCER IC=100mA, RBE=100Ω 85 65 BVCEO IC=100mA 80 60 - 2N5956 2N6374 50 50 45 40 2N5956 2N6374 MIN MAX 100 50 45 40 2.0 100 1.0 0.1 - UNITS V V V V V A A W °C °C/W UNITS μA μA μA mA mA mA μA μA μA mA mA mA mA V V V R2 (2-September 2014) 2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 PNP NPN COMPLEMENTARY SILICON POWER TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) 2N5954 2N5955 2N6372 2N6373 SYMBOL TEST CONDITIONS MIN MAX MIN MAX VCE(SAT) IC=2.0A, IB=200mA 1.0 VCE(SAT) IC=2.5A, IB=250mA 1.0 VCE(SAT) IC=3.0A, IB=300mA VCE(SAT) IC=6.0A, IB=1.2A (PNP types) 2.0 2.0 VBE(ON) VCE=4.0V, IC=2.0A 2.0 VBE(ON) VCE=4.0V, IC=2.5A 2.0 VBE(ON) VCE=4.0V, IC=3.0A VBE(ON) VCE=4.0V, IC=6.0A (NPN types) 3.0 3.0 hFE VCE=4.0V, IC=2.0A 20 100 hFE VCE=4.0V, IC=2.5A 20 100 hFE VCE=4.0V, IC=3.0A hFE VCE=4.0V, IC=6.0A 5.0 5.0 hfe VCE=4.0V, IC=0.5A, f=1.0kHz 25 25 fT VCE=4.0V, IC=1.0A, f=1.0MHz (NPN types) 4.0 4.0 fT VCE=4.0V, IC=1.0A, f=1.0MHz (PNP types) 5.0 5.0 - 2N5956 2N6374 MIN MAX 1.0 2.0 2.0 3.0 20 100 5.0 25 4.0 5.0 - UNITS V V V V V V V V MHz MHz TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R2 (2-September 2014) w w w. c e n t r a l s e m i . c o m