CMLD6263DO SURFACE MOUNT SILICON DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6263DO incorporates two galvanically isolated, high voltage, low VF silicon diodes with an opposing Anode/Cathode configuration, in a space saving SOT-563 surface mount package. These diodes are designed for fast switching applications requiring a low forward voltage drop. MARKING CODE: 63O SOT-563 CASE FEATURES: • Dual Opposing (DO) Schottky Diodes • High Voltage (70V) • Low Forward Voltage • Galvanically Isolated MAXIMUM RATINGS: (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRM IF 70 V 15 mA IFSM PD 50 mA 250 mW Continuous Forward Current Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance UNITS TJ, Tstg ΘJA -65 to +150 °C 500 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 98 200 nA IR VR=50V BVR IR=10μA VF IF=1.0mA 410 mV CJ VR=0, f=1.0MHz 2.0 pF trr IR=IF=10mA, Irr=1.0mA, RL=100Ω 5.0 ns 70 V 395 R5 (15-June 2015) CMLD6263DO SURFACE MOUNT SILICON DUAL OPPOSING HIGH VOLTAGE SCHOTTKY DIODE SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Cathode D2 4) Anode D2 5) NC 6) Cathode D1 MARKING CODE: 63O R5 (15-June 2015) w w w. c e n t r a l s e m i . c o m