2N2484 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICEO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE hFE hFE hFE hFE hFE hfe fT fT hie hoe hre Cob Cib SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=45V VCB=45V, TA=150°C VCE=5.0V VEB=5.0V IC=10μA 60 IC=10mA 60 IE=10μA 6.0 IC=1.0mA, IB=100μA VCE=5.0V, IC=100μA 0.5 VCE=5.0V, IC=1.0μA 30 VCE=5.0V, IC=10μA 100 VCE=5.0V, IC=10μA, TA=-55°C 20 VCE=5.0V, IC=100μA 175 VCE=5.0V, IC=500μA 200 VCE=5.0V, IC=1.0mA 250 VCE=5.0V, IC=10mA VCE=5.0V, IC=1.0mA, f=1.0kHz 150 VCE=5.0V, IC=50μA, f=5.0MHz 15 VCE=5.0V, IC=0.5mA, f=30MHz 60 VCE=5.0V, IC=1.0mA, f=1.0kHz 3.5 VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCB=5.0V, IE=0, f=140kHz VEB=0.5V, IC=0, f=140kHz 60 60 6.0 50 360 -65 to +200 486 MAX 10 10 2.0 10 0.35 0.7 UNITS V V V mA mW °C °C/W UNITS nA μA nA nA V V V V V 500 800 900 24 40 800 6.0 6.0 MHz MHz kΩ μS x10-6 pF pF R1 (30-May 2012) 2N2484 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MAX NF VCE=5.0V, IC=10μA, RS=10kΩ BW=15.7kHz, 3.0dB PTS @ 10Hz, 10kHz 3.0 NF VCE=5.0V, IC=10μA, RS=10kΩ, f=100Hz, BW=20Hz 10 NF VCE=5.0V, IC=10μA, RS=10kΩ, f=1.0kHz, BW=200Hz 3.0 NF VCE=5.0V, IC=10μA, RS=10kΩ, f=10kHz, BW=2.0kHz 2.0 UNITS dB dB dB dB TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (30-May 2012) w w w. c e n t r a l s e m i . c o m