2N3740 - Central Semiconductor Corp.

2N3740
2N3741
2N3740A
2N3741A
SILICON
PNP POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3740 series
devices are silicon PNP power transistors manufactured
by the epitaxial base process designed for power
amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
2N3740
2N3740A
60
60
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741)
ICEV
VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A)
ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740)
ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740A)
ICEV
VCE=60V, VBE=1.5V, TC=150°C (2N3741)
ICEV
VCE=60V, VBE=1.5V, TC=150°C (2N3741A)
ICBO
VCB=Rated VCBO (2N3740, 2N3741)
ICBO
VCB=Rated VCBO (2N3740A, 2N3741A)
ICEO
VCE=40V (2N3740)
ICEO
VCE=40V (2N3740A)
ICEO
VCE=60V (2N3741)
ICEO
VCE=60V (2N3741A)
IEBO
VEB=7.0V (2N3740, 2N3741)
IEBO
VEB=7.0V (2N3740A, 2N3741A)
BVCEO
IC=100mA (2N3740, 2N3740A)
60
BVCEO
IC=100mA (2N3741, 2N3741A)
80
VCE(SAT) IC=1.0A, IB=125mA
VBE(ON)
VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=100mA
40
hFE
VCE=1.0V, IC=250mA
30
hFE
VCE=1.0V, IC=500mA
20
hFE
VCE=1.0V, IC=1.0A
10
hfe
VCE=10V, IC=50mA, f=1.0kHz
25
fT
VCE=10V, IC=100mA, f=1.0MHz
4.0
VCB=10V, IE=0, f=100kHz
Cob
2N3741
2N3741A
80
80
7.0
4.0
10
2.0
25
-65 to +200
MAX
100
100
1.0
0.5
1.0
0.5
100
100
1.0
1.0
1.0
1.0
0.5
100
0.6
1.0
UNITS
V
V
V
A
A
A
W
°C
UNITS
μA
nA
mA
mA
mA
mA
μA
nA
mA
μA
mA
μA
mA
nA
V
V
V
V
200
100
MHz
pF
R2 (2-September 2014)
2N3740
2N3741
2N3740A
2N3741A
SILICON
PNP POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
R2 (2-September 2014)
w w w. c e n t r a l s e m i . c o m