CBAS17 SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL IFRM PD TJ, Tstg ΘJA 250 UNITS mA 350 mW -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IR VR=4.0V VF IF=0.1mA 580 665 MAX 5.0 UNITS µA 680 mV VF IF=1.0mA 665 745 760 mV VF IF=5.0mA 725 805 820 mV VF IF=10mA 750 825 840 mV VF IF=100mA 870 920 960 mV CT VR=0, f=1.0MHz 140 pF R6 (20-November 2009) CBAS17 SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) ANODE 2) NO CONNECTION 3) CATHODE MARKING CODE: A91 R6 (20-November 2009) w w w. c e n t r a l s e m i . c o m