CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: 7C3 SOT-563 CASE APPLICATIONS: • Load Switch / Level Shifting • Battery Charging • Boost Switch • Electro-luminescent Backlighting MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Very Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-563 Surface Mount Package • Complementary Dual P-Channel Device: CMLDM5757 SYMBOL VDS VGS 20 UNITS V 8.0 V ID IDM PD 540 mA 1.5 A 350 mW PD PD 300 mW 150 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W MAX 5.0 UNITS μA 1.0 μA 1.0 V ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS VDS=16V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VDS=VGS, ID=250μA VGS=0, IS=350mA VSD rDS(ON) rDS(ON) rDS(ON) Crss 20 0.45 VGS=4.5V, ID=540mA VGS=2.5V, ID=500mA VGS=1.8V, ID=350mA V 1.2 V 0.55 Ω 0.7 Ω 0.9 Ω 20 pF Ciss VDS=16V, VGS=0, f=1.0MHz VDS=16V, VGS=0, f=1.0MHz 150 pF Coss VDS=16V, VGS=0, f=1.0MHz 25 pF Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R3 (8-June 2015) CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET ELECTRICAL SYMBOL Qg(tot) Qgs Qgd ton toff CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) TEST CONDITIONS TYP VDS=10V, VGS=4.5V, ID=500mA 1.58 VDS=10V, VGS=4.5V, ID=500mA 0.17 VDS=10V, VGS=4.5V, ID=500mA 0.24 VDD=10V, VGS=4.5V, VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω ID=540mA, RG=10Ω UNITS nC nC 10 nC ns 25 ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 7C3 R3 (8-June 2015) w w w. c e n t r a l s e m i . c o m