Device Datasheet - Central Semiconductor Corp.

DATA SHEET
MJ6503
PNP SILICON
POWER TRANSISTOR
JEDEC TO-3 CASE
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ6503 is a silicon PNP transistor designed for high voltage, high
speed switching in inductive circuits.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCEV
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJC
400
450
6.0
8.0
16
4.0
8.0
125
UNITS
V
V
V
A
A
A
A
W
-65 to +200
°C
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
ICEV
ICEV
ICER
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
TEST CONDITIONS
VCE=450V, VBE=1.5V
MIN
VCE=450V, VBE=1.5V, TC=150°C
VCE=450V, RBE=50Ω, TC=100°C
VEB=6.0V
IC=10mA
IC=4.0A, IB=1.0A
IC=8.0A, IB=3.0A
MAX
0.5
UNITS
mA
2.5
mA
3.0
1.0
1.5
5.0
mA
mA
V
V
V
2.5
1.5
V
V
1.5
V
400
pF
0.1
µs
400
IC=4.0A, IB=1.0A, TC=100°C
IC=4.0A, IB=1.0A
VBE(SAT)
hFE
Is/b
IC=4.0A, IB=1.0A, TC=100°C
VCE=5.0V, IC=2.0A
See Figure 1
15
RBSOA
Cob
td
See Figure 2
VCB=10V, IE=0, f=1.0kHz
VCC=250V, IC=4.0A, IB1=1.0A
100
tr
ts
VCC=250V, IC=4.0A, IB1=1.0A
VCC=250V, IC=4.0A, IB1=1.0A, VBE(off)=5.0V
0.5
µs
2.0
µs
tf
VCC=250V, IC=4.0A, IB1=1.0A, VBE(off)=5.0V
0.5
µs
(Continued)
R1
MJ6503
PNP SILICON POWER TRANSISTOR
100
10
9
8
10µs
IC, COLLCECTOR CURRENT (AMPS)
IC, COLLCECTOR CURRENT (AMPS)
10
100µs
1.0ms
TC = 25°C
DC
1
7
IC / IB ≥ 4
VBE(off) = 2 V TO 8 V
TJ = 100°C
6
5
4
3
0.1
2
1
0.01
0
1
10
100
1000
0
50
VCE COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
150
200
250
300
350
Figure 1. Forward Bias Safe Operating Area
A
DIMENSIONS
INCHES
MILLIMETERS
MAX
MIN
MAX
SYMBOL MIN
A
1.516 1.573 38.50 39.96
B (DIA) 0.748 0.875 19.00 22.23
C
0.250 0.450
6.35 11.43
D
0.433 0.516 11.00 13.10
E
0.054 0.065
1.38
1.65
F
0.035 0.045
0.90
1.15
G
1.177 1.197 29.90 30.40
H
0.650 0.681 16.50 17.30
J
0.420 0.440 10.67 11.18
K
0.205 0.225
5.21
5.72
L (DIA)
0.151 0.172
3.84
4.36
M
0.984 1.050 25.00 26.67
TO-3 (REV: R2)
B
E
C
F
G
H
J
K
2
450
500
Figure 2. Reverse Bias Switching Safe Operating Area
TO-3 PACKAGE - MECHANICAL OUTLINE
D
400
VCE COLLECTOR-EMITTER VOLTAGE (VOLTS)
L
M
1
R2
Lead Code
1) Base
2) Emitter
Case) Collector