CEDM8004VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8004VL is an P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: V COMPLEMENTARY N-CHANNEL: CEDM7004VL FEATURES: • ESD protection up to 2kV • 0.32mm very low package profile • Low rDS(ON) • Low threshold voltage • Logic level compatible • Small leadless surface mount package SOT-883VL CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable devices MAXIMUM RATING: (TA=25°C) Drain-Source Voltage SYMBOL VDS VGS Gate-Source Voltage Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature 8.0 V ID PD 450 mA 100 mW TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=30V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) gFS Crss VGS=0, ID=100μA VDS=VGS, ID=250μA VGS=0, IS=100mA UNITS V 30 MAX 3.0 UNITS μA 1.0 μA 30 V 0.5 VGS=4.5V, ID=430mA VGS=2.5V, ID=200mA VGS=1.8V, ID=100mA VDS =10V, ID=100mA VDS=25V, VGS=0, f=1.0MHz 1.0 V 1.1 V 1.0 1.1 Ω 1.6 2.0 Ω 2.6 3.3 200 Ω mS 8.9 10 pF 45 55 pF 8.5 15 Ciss Coss Qg(tot) VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz ID=1.0A 0.88 nC Qgs ID=1.0A VDS=10V, VGS=4.5V, ID=1.0A 0.35 nC 0.128 nC Qgd VDS=10V, VDS=10V, VGS=4.5V, VGS=4.5V, pF R3 (21-November 2014) CEDM8004VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET SOT-883VL CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) 2 3 1 LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: V Package Type Options (all dimensions are maximum - in mm) Length Width Height SOT-883VL Package 1.05 0.65 0.32 PD (mW) 100 Central Item Number SOT-883L 1.05 0.65 0.40 100 CEDM8004 SOT-523 1.70 1.70 0.78 250 CMUDM8004 CEDM8004VL R3 (21-November 2014) w w w. c e n t r a l s e m i . c o m CEDM8004VL SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R3 (21-November 2014) w w w. c e n t r a l s e m i . c o m