2N5400 2N5401 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5400 and 2N5401 are silicon PNP transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JA Thermal Resistance JC 2N5400 130 120 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5400 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=100V 100 ICBO VCB=100V, TA=100°C 100 ICBO VCB=120V ICBO VCB=120V, TA=100°C IEBO VEB=3.0V 50 BVCBO IC=100μA 130 BVCEO IC=1.0mA 120 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA 0.2 0.5 IC=50mA, IB=5.0mA VCE(SAT) VBE(SAT) IC=10mA, IB=1.0mA 1.0 VBE(SAT) IC=50mA, IB=5.0mA 1.0 hFE VCE=5.0V, IC=1.0mA 30 hFE VCE=5.0V, IC=10mA 40 240 hFE VCE=5.0V, IC=50mA 40 fT VCE=10V, IC=10mA, f=100MHz 100 400 Cob VCB=10V, IE=0, f=1.0MHz 6.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 30 200 NF VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz 8.0 2N5401 160 150 5.0 600 625 1.5 -65 to +150 200 83.3 2N5401 MIN MAX 50 50 50 160 150 5.0 0.2 0.5 1.0 1.0 50 60 240 50 100 300 6.0 40 200 - 8.0 UNITS V V V mA mW W °C °C/W °C/W UNITS nA μA nA μA nA V V V V V V V MHz pF dB R1 (5-December 2014) 2N5400 2N5401 SILICON PNP TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (5-December 2014) w w w. c e n t r a l s e m i . c o m 2N5400 2N5401 SILICON PNP TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (5-December 2014) w w w. c e n t r a l s e m i . c o m