CDM2205-800FP SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CDM2205-800FP is an 800 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING CODE: CDM05-800FP TO-220FP CASE APPLICATIONS: • Power Factor Correction • Alternative energy inverters • Solid State Lighting FEATURES: • High voltage capability (VDS=800V) • Low gate charge (Qg(tot)=17.4nC TYP) • Low rDS(ON) (2.2Ω TYP) MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Steady State) ID Maximum Pulsed Drain Current, tp=10μs IDM Continuous Source Current (Body Diode) IS Maximum Pulsed Source Current (Body Diode) ISM Single Pulse Avalanche Energy (Note 1) EAS Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC Thermal Resistance JA 800 30 5.0 20 5.0 20 323 48 -55 to +150 2.6 120 UNITS V V A A A A mJ W °C °C/W °C/W Note 1: L=30mH, IAS=4.5A, VDD=60V, RG=25Ω, Initial TJ=25°C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=30V, VDS=0 IDSS VDS=800V, VGS=0 BVDSS VGS=0, ID=250μA 800 VGS(th) VGS=VDS, ID=250μA 2.0 3.0 VSD VGS=0, IS=5.0A 0.9 rDS(ON) VGS=10V, ID=2.5A 2.2 Crss VDS=25V, VGS=0, f=1.0MHz 2.8 Ciss VDS=25V, VGS=0, f=1.0MHz 705 Coss VDS=25V, VGS=0, f=1.0MHz 72 MAX 100 1.0 4.0 1.4 2.7 UNITS nA μA V V V Ω pF pF pF R3 (19-August 2015) CDM2205-800FP SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT ELECTRICAL SYMBOL Qg(tot) Qgs Qgd td(on) tr td(off) tf trr Qrr CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted) TEST CONDITIONS TYP UNITS VDS=640V, VGS=10V, ID=5.0A (Note 2) 17.4 nC VDS=640V, VGS=10V, ID=5.0A (Note 2) 3.70 nC VDS=640V, VGS=10V, ID=5.0A (Note 2) 7.88 nC VDD=400V, ID=5.0A, RG=25Ω (Note 2) 13 ns VDD=400V, ID=5.0A, RG=25Ω (Note 2) 27 ns VDD=400V, ID=5.0A, RG=25Ω (Note 2) 44 ns VDD=400V, ID=5.0A, RG=25Ω (Note 2) 30 ns VGS=0, IS=5.0A, di/dt=100A/μs (Note 2) 549 ns VGS=0, IS=5.0A, di/dt=100A/μs (Note 2) 2.95 μC Note 2: Pulse Width < 300μs, Duty Cycle < 2% TO-220FP CASE - MECHANICAL OUTLINE R4 PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING CODE: CDM05-800FP R3 (19-August 2015) w w w. c e n t r a l s e m i . c o m CDM2205-800FP SILICON N-CHANNEL POWER MOSFET 5.0 AMP, 800 VOLT TYPICAL ELECTRICAL CHARACTERISTICS R3 (19-August 2015) w w w. c e n t r a l s e m i . c o m