2SJ410 Silicon P Channel MOS FET REJ03G0863-0300 Rev.3.00 Jun 05, 2006 Description High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter and motor driver Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D 1. Gate 2. Drain 3. Source G 1 2 3 Rev.3.00 Jun 05, 2006 page 1 of 4 S 2SJ410 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID Value –200 ±20 –6 –24 –6 30 150 –55 to +150 ID (pulse) Note 1 IDR Pch Note 2 Tch Tstg Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 Jun 05, 2006 page 2 of 4 Symbol V (BR) DSS V (BR) GSS Min –200 ±20 20 Typ — — Max — — Unit V V IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr — — –2.0 — 2.0 — — — — — — — — — — — — 0.7 3.2 900 280 65 18 50 90 40 –1.0 220 ±10 –250 –4.0 0.85 — — — — — — — — — — µA µA V Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 ± µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –160 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –3 A, VGS = –10 V Note 3 ID = –3 A, VDS = –10 V Note 3 VDS = –10 V VGS = 0 f = 1 MHz ID = –3 A VGS = –10 V RL = 10 Ω IF = –6 A, VGS = 0 IF = –6 A, VGS = 0 diF/dt = 50 A/µs 2SJ410 Main Characteristics Power vs. Temperature Derating Channel Dissipation Pch (W) 40 30 20 10 0 0 50 100 Case Temperature Rev.3.00 Jun 05, 2006 page 3 of 4 150 Tc (°C) 200 2SJ410 Package Dimensions Package Name TO-220FM JEITA Package Code SC-67 Previous Code TO-220FM / TO-220FMV RENESAS Code PRSS0003AD-A MASS[Typ.] 1.8g 10.0 ± 0.3 Unit: mm 2.8 ± 0.2 φ 3.2 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 14.0 ± 1.0 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 5.0 ± 0.3 12.0 ± 0.3 17.0 ± 0.3 0.6 7.0 ± 0.3 2.5 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SJ410-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Jun 05, 2006 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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