3.2×2.5A Crystal Units Surface Mount Type KSX-23 Series

Crystal Units
Surface Mount Type
KSX-23 Series
3.2×2.5A
Features
How to Order
KSX-23-26000K C A-Q C 0 R
• Reference frequency
for telecommunication systems
• Reflow compatible
• Using Ceramic Package resulting
in high reliability
• Small and low profile
q
w
e rt y u i
qType
wNominal Frequency
Code
Freq.(kHz) Code Freq.(kHz)
19200K 19200.000 32000K 32000.000
19680K 19680.000 38400K 38400.000
19800K 19800.000 40000K 40000.000
26000K 26000.000
Applications
• Cellular phone, IC Card, GPS
* Please inquire about frequencies other than the above.
RoHS Conforming
Pb Free
eLoad Capacitance
C
12pF
Specifications
Items
Symbol
Frequency Range
Specification
Units
rFrequency Stability
A
±10ppm
tOperating Temperature
Q
−30˚C to +85˚C
Remarks
Fo
19200~40000
kHz
Overtone Order
––––
Fundamental
––––
Frequency Tolerance
∆F/F
±10
ppm
@ 25°C
Frequency Temperature Character
∆F/T
±15
ppm
[email protected] 25°C Over Operating Temp Range
Motional Series Resistance
CI
Table 1
ohm
––––
Table 2
µW
Level of Drive
Load Capacitance
CL
12
pF
Operating Temp. Range
TOPR
−30~+85
°C
Storage Temp. Range
TSTG
−40~+85
°C
yFrequency Temperature Stability
C
±15ppm
uFrequency Offset
0
0Hz(Standard)
iPackaging
R
Taping
* Taping packing : one unit 1,000pcs & 3,000pcs
* Please inqurie about specifications other than the above.
Table1 Motional Series Resistances
Frequency Range
Motional Series Resistance
19200~24999kHz
60Max
25000~40000kHz
40Max
Table2 Level of Drive
Units
Frequency Range
Level of Drive
Units
ohm
19200~40000kHz
10(Max 100)
µW
Dimensions
(Unit : mm)
Recommended Land Pattern
(Unit : mm)
KSX-23
<CONNECTION>
3.2±0.2
#4
TOP VIEW
#4
#3
#1
#2
2.5±0.2
#3
1.4
#2
#1
1.2
(0.8) 0.9
1.2
1.7
0.85max
#2, #4 are connected to the
metal lid of the top.
#4
#3
#1
#2
CRYSTAL(X’tal)
IN or OUT
GND
(1.0)
#1
#2
#4
#3
2.2
CRYSTAL(X’tal)
IN or OUT
GND
Crystal Units
Surface Mount Type
KSX-35 Series
5.0×3.2A
Features
• Reference frequency
for telecommunication systems
• Reflow compatible
• Using Ceramic Package resulting in
high reliability
• Small, low profile and market standard
dimensionss
Applications
• Cellular phone, IC Card, GPS
• Remote keyless entry
RoHS Conforming
Pb Free
How to Order
KSX-35-13000K C A-Q C 0 R
q
w
qType
wNominal Frequency
Code
Freq.(kHz)
13000K 13000.000
13560K 13560.000
14400K 14400.000
16800K 16800.000
19200K 19200.000
e rt y u i
Code Freq.(kHz)
19440K 19440.000
19680K 19680.000
19800K 19800.000
26000K 26000.000
* Please inquire about frequencies other than the above.
eLoad Capacitance
C
12pF
Specifications
Items
Symbol
Frequency Range
Specification
Units
rFrequency Stability
A
±10ppm
tOperating Temperature
Q
−30˚C to +85˚C
Remarks
Fo
12600~27820
kHz
Overtone Order
––––
Fundamental
––––
Frequency Tolerance
∆F/F
±10
ppm
@ 25°C
Frequency Temperature Character
∆F/T
±15
ppm
[email protected] 25°C Over Operating Temp Range
Motional Series Resistance
CI
Table 1
ohm
––––
Table 2
µW
Level of Drive
Load Capacitance
CL
12
pF
Operating Temp. Range
TOPR
−30~+85
°C
Storage Temp. Range
TSTG
−40~+85
°C
yFrequency Temperature Stability
C
±15ppm
uFrequency Offset
0
0Hz(Standard)
iPackaging
R
Taping
* Taping packing : one unit 1,000pcs & 3,000pcs
* Please inqurie about specifications other than the above.
Table1 Motional Series Resistances
Frequency Range
Motional Series Resistance
12600~18999kHz
60Max
11000~25999kHz
50Max
26000~27820kHz
40Max
Table2 Level of Drive
Units
(Unit : mm)
Units
12600~27820kHz
10(Max 100)
µW
Recommended Land Pattern
(Unit : mm)
<PIN CONNECTION>
5.0±0.2
#4
Level of Drive
ohm
Dimensions
KSX-35
Frequency Range
TOP VIEW
#4
#3
3.2±0.2
#3
1.8
#1
#2
1.2
#2
#1
1.2
0.95max
#2, #4 are connected to
the metal lid of the top.
(0.9) 1.4
2.2
(1.2)
#2
#4
#3
#3
#1
#2
CRYSTAL(X’tal)
IN or OUT
GND
2.6
#1
#4
CRYSTAL(X’tal)
IN or OUT
GND
Handling Notes
1. Shock & Drop • Vibration
2. Cleaning
Do not inflict excessive shock and mechanical vibration that
exceeds the norm, such as hitting or mistakenly dropping, when
transporting and mounting on a board. There are cases when
pieces of crystal break, and pieces that are used become
damaged, and become inoperable. When a shock or vibration that
exceeds the norm has been inflicted, make sure to check the
characteristics.
Since a crystal piece can be broken by resonance when a crystal
device is cleaned by ultrasonic cleaning. Be careful when carrying
out ultrasonic cleaning.
3. Soldering conditions
To maintain the product reliability, please follow recommended conditions.
Standard soldering iron conditions
Crystal Units
Soldering iron
280˚C ~ 340˚C
Time
3+1/−0sec. max
Reflow conditions (Example)
Temperature(˚C)
260˚C±5˚C 10sec(max)
200˚C min 30-45sec.
Hold-Time 1-2min
Cool Down 2.5-5˚C/s
Ramp-Up 1-3˚C/s
Time(sec.)
Crystal Units
Recommended reflow Conditions vary depending upon products.
Please check with the respective specification for details.
4. Mounting Precautions
Leaded Devices
The special glass, located where the lead of the retainer base comes out, is aligned with the coefficient of thermal expansion of the lead, If the
glass is damaged and cracks appear, there may be cases in which performance deteriorates and it fails to operate.
Consequently, when making the device adhere closely and applying solder, align the gap of the hole of the board with the gap of the lead and
insert without excessive force.
When making the device adhere closely to a through hole board and applying solder, be careful that the solder does not get into the metal part
of the retainer base and cause a short. Putting in an insulation spacer is one more method of preventing a short circuit.
When the lead is mounted floating, fix it as far as possible so that contact with other parts and the breakage due to the fatigue, and the
mechanical resonance of the lead will not occur.
When the lead is bent and used, do not bend the lead directly from the base, separate it 0.5mm or more and then bend it. When bending,
before attaching to the board, fix the place where the lead comes out in advance and attach it after bending so that a crack does not occur in
the glass part.
Surface Mount Devices
The lead of the device and the pattern of the board is soldered on the surface. Since extreme deformation of the board tears off the pattern,
tears off the lead metal, cracks the solder and damages the sealed part of the device and there are cases in which performance deteriorates
and operation fails, use it within the stipulated bending conditions. Due to the small cracks in the board resulting from mounting, please pay
sufficient attention when attaching a device at the position where the warping of the board is great.
When using an automatic loading machine, as far as possible, select a type that has a small impact and use it while confirming that there is no
damage.
Surface mount devices are NOT flow soldering compatible.
5. Storage Condition
Since the long hour high temperature and low temperature storage, as well as the storage at high humidity are causes of deterioration in
frequency accuracy and solderability.
Parts should be stored in temperature range of -5 to +40C˚, humidity 40 to 60% RH, and avoid direct sunlight. Then use within 6 months.
Handling Notes
For Proper Use of Crystal Units
1. Characteristics of crystal units
The thickness of crystal vibrator of the AT cut crystal unit as described in the previous page differs depending on the overtone
mode.
(1) Relationship between thickness of crystal blank and oscillation frequency
Cut angle/mode
overtone
Frequency range
(MHz)
Formula of thickness
of crystal blank
AT/Fundamental mode
3.5~ 33
1.67/f
AT/3’rd O. T
33~100
5.01/f
AT/5’th O. T
100~150
8.35/f
AT/7’th O. T
150~200
11.69/f
f : Series resonance frequency. (MHz)
In case of calculating the thickness of AT-cut 16MHz
t=1.67/16=0.104(mm)
(2) Examples of specifications for frequency-temperature characteristics
The frequency-temperature characteristics of the AT cut crystal unit are tertiary curves.
The diagram below shows examples of the tertiary curves that pass temperature range and frequency deviation specifications.
The range enclosed by the smaller rectangular satisfies the following specification:
±10×10-6 (-10 to 60: 25˚C)
The range enclosed by the larger rectangular satisfies the following specification:
±50×10-6 (-20 to 70: 25˚C)
Temperature (˚C)
–70
–50
–30
–10
10
30
50
70
90
110
70
60
50
Frequency deviation ∆ f / f (×10–6)
40
30
20
10
0
–10
–20
–30
–40
–50
–60
–70
* These are examples. Required frequency-temperature specifications are determined through
individual consultations.
(3) Equivalent electric circuit and equivalent constant of crystal unit
The following equivalent constants are used near the resonance frequency.
L1 : Motional inductance in the equivalent electric circuit
L1
C1
R1
C1 : Motional capacitance in the equivalent electric circuit
R : Motional resistance in the equivalent electric circuit
C0 : Parallel capacitance in the equivalent electric circuit
C0
Equivalent electric circuit of a quarts crystal unit
Handling Notes
(4) Items calculated by equivalent constants and load capacitance
1
2π L1 C1
f s: Series resonance frequency
fs =
f p: Parallel resonance frequency
1
C C
2π L 1 0 1
C0+ C1
γ = C0
C1
g : Capacitance ratio
fp =
C1
+1
2 (C 0 + C L )
f L : Load resonance frequency
fL = fs
R L : Load resistance
R L = R 1 1+
C L : Load capacitance
CL =
C1
2
Q : Quality factor
Q=
2π f s L 1
1
=
R1
2π f s C1 R1
C0
CL
2
1
−C 0
(f L /f s )−1
The equation f L shows that f L varies as load capacitance C L connected to the crystal unit changes and that f L becomes larger.
as C L becomes smaller.
The equation R L shows the change in impedance with a load capacitance connected. The impedance of crystal unit becomes
larger as C L becomes smaller.
2. Oscillation circuit and crystal unit
(1) Equivalent circuit of oscillation circuit and oscillation conditions
A simplified equivalent circuit is shown below.
Crystal unit
Oscillation circuit
CL
Crystal unit
XL
Oscillation circuit
C L = –X C
C L : Load capacitance
–R : Negative resistance
X L : Reactance of crystal unit
–X C : Reactance of oscillation circuit
R L : Load resonance resistance
–R
RL
–R
Handling Notes
The oscillation start-up conditions are described as
R L => | −R |
, and in order to oscillate the crystal unit accurately, it must be designed such that the negative resistance of the oscillation
circuit becomes bigger comparing with the resonance resistance value at the time of loading. This ratio is called oscillation
margin degree MOSC and it is one of critical factors when designing the oscillation circuit and is described as below.
For oscillation circuit designing conditions, it is recommended that an oscillation circuit be designed using a negative
resistance of a value five to ten times or more larger than RL calculated from the resonance resistance specification value.
MOSC = | −R | / R L => 5
In a steady oscillation state, the load resonance resistance is given as follows:
R L = | −R |
The mutual conductance of the oscillation circuit decreases after the oscillation has started to continuously compensate for the
power loss due to the load resonance resistance of the crystal unit, which continues oscillation.
The frequency condition is given as follows:
XL = XC, XL - XC = 0
As shown in the following figure, the reactance of the crystal unit varies to a value matching the load capacitance of the
oscillation circuit C L = XC. Thus an oscillation frequency is determined.
+X
fp
fs
fL
f s : Series resonance frequency
Reactance
f L : Load resonance frequency
Admittance
–X
ω Le
–1/ωC L
Frequency
f p : Parallel resonance frequency
Handling Notes
(2) Changes of load capacitance and oscillation frequency
800
As shown above, the series resonance frequency of the crystal
unit changes with load capacitance C L of the oscillation circuit. In
the actual oscillation circuit, however, fine adjustments of
oscillation frequencies are carried out by varying C L by the trimmer
capacitor or the like. The following figure shows an example of
load capacitance characteristics. The slope of the characteristics
varies depending on the frequency, shape, the number of overtone
mode, etc.
700
Load capacity characteristic
∆f/f (×10 –6)
600
500
400
300
200
100
0
0
3. Crystal oscillation circuit
10
20
30
50
60
C L (pF)
C-MOS fundamental crystal oscillation circuit
(1) C-MOS fundamental crystal oscillation circuit
R f = 1M
As shown above, the series resonance frequency of the crystal
The figure on the right shows a standard C-MOS inverter crystal
oscillation circuit for oscillating crystal unit with fundamental mode.
* Rx is an element to reduce excitation current of the crystal unit
preventing frequency fluctuation, but Rx is not used in some
cases.
Buffer
Xtal
Rd
Rx
C1
C2
Variation of negative resistance with condenser capacity
Condenser capasityC (C 1 =C 2)(pF)
0
10
20
30
40
50
-100
Negative resistance
Characteristics of the circuit when load capacitances C1 and C2
are changed under the condition of C1 = C2 are shown in the figure
on the right.
It is not desirable that the excessive increase of the value of
condenser leads to a decrease of the negative resistance resulting
in increasing the possibility of oscillation failure.
40
-200
(Ω)
-5K
16.0MHz
-500
10.0MHz
-1K
3.579545MHz
-2K
-10K
Frequency characteristics of negative resistance
Rd mainly adjusts frequency characteristics of the negative
resistance and is used to prevent oscillating by third Overtone
mode. In case of a bigger circuit of the negative resistance, there
is a case it is used to prevent the abnormal oscillation.
Frequency(MHz)
2
Negative resistance
(Ω)
4
6
8
10
12
14
16
-100
-200
C 1=C 2=10pF
-500
-1K
-2K
-5K
-10K
Resistance of Rd
3.5~6.9MHz=2.2kΩ
7.0~16MHz=220Ω
Handling Notes
Selection of ICs and circuit constants by frequency bands
Frequency
3~4.9(MHz)
5~6.9(MHz)
7~9.9(MHz)
10~19.9(MHz)
TC74HCU04A
TC7SU04F
TC7WU04FU
TC4069UB
TC4SU69F
IC
Rf
20~30(MHz)
TC74VHCU04
TC7SHU04F
TC7WHU04FU
1M
Rd
*1
Rx
*2
C 1, C 2
*3
1500( )
470( )
0( )
0( )
0( )
6~15(pF)
6~15(pF)
0~1500
6~22(pF)
*1: Necessary for preventing overtone oscillation and must be changed depending on the frequency band or the C1 and C2 values.
*2: Used to reduce excitation current of the crystal unit. Necessary for stable operation of small-sized crystal units.
*3: The optimum value differs with the values of load capacitance and Rd.
(2) C-MOS overtone crystal oscillation circuit
This figure shows a standard C-MOS inverter crystal oscillation circuit to oscillate a crystal unit using the overtone mode.
C-MOS overtone crystal oscillation circuit
R f = 1M
L1
X-tal
R1
C3
1000pF
C1
C2
L2
There are same cases when L1 and R1 are matched to the value of load capacitance.
(3) Selection of ICs and circuit constants by frequency bands
Frequency range
20~60(MHz)
C1
TC74VHCU04
TC7SHU04F
TC7WHU04FU
3~10pF
C2
10~22pF
IC
(4) Method of selecting circuit constants and functions of elements
C1 : Forms load capacitance of the circuit together with C2, L1 and L2. A value of approx. 5pF is used.
C2 : Forms load capacitance of the circuit together with C1, L1 and L2. Prevents fundamental wave oscillation. Shall be selected
so that C2 comes between the third overtone frequency at which resonance frequency with L2 is to make oscillation and 1/3
of the third overtone frequency. A value of 10 to 22pF is used.
C3 : A bypath capacitor
L1 : A coil to adjust load capacitance of the oscillation circuit to a value near the series. A value of several µH is used.
L2 : Forms load capacitance of the circuit together with C1, C2 and L1. Prevents fundamental wave oscillation. Shall be selected
so that L2 comes between the third overtone frequency at which resonance frequency with C2 is to make oscillation and
1/3 of the third overtone frequency. A value of 10 to 22pF is used.
R1 : A Q dump resistor for L1 . As an element for preventing self-excited oscillation, A value of several kΩ to several tens of kΩ
is used.
* L1 and R1 might not be used.
Handling Notes
(5) Method of checking oscillation circuit
qSome ICs have a low upper-limit value of usable frequency, so refer to individual IC catalog to make sure that the IC can
oscillate a crystal unit with an adequate negative resistance.
w The following figure shows an example of a C-MOS oscillation circuit. Check resistance Rsup is connected in series with the
crystal unit to check the negative resistance. Use 3 to 22pF for C1 and C2, and see the table below for values of check
resistance.
Rf
Frequency range
Rsup
C1
C2
Values of check resistance
3.5~4.5MHz
1.5k
4.6~6.0MHz
1.0k
6.1~10.0MHz
800
10.1~14.0MHz
500
14.1~20.0MHz
400
eUsing a spectrum analyzer or oscilloscope, check that every oscillation is normally activated while turning the power on and
off several times. For oscillation circuits with no power regulator ICs, carefully check changes in the negative resistance
against supply voltage and in frequencies.
rWhen oscillation is normal, remove the check resistance before using the crystal circuit.
tIf oscillation is unstable or is not generated, gradually decrease the values of C1 and C2 until normal oscillation is obtained.
yIf normal oscillation cannot be generated near 10MHz or near 20MHz, replace the IC with a new one suitable for higher
frequencies.
(6) Load capacitance and oscillation frequency of transistor/fundamental crystal oscillation circuit
Viewed from the connection terminals of a crystal unit, the load capacitance C L of an oscillation circuit is generally
comprised of C1, C t, C2, and C3 if stray capacitance of the circuit and the capacitance between base and emitter of the
transistor are ignored. Since trimmer capacitor is adjusted to C T = MIN. to MAX. for zero adjustment of the oscillation
frequency, the value of C L at this time can be obtained from the following equation.
C L MIN. =
1
1
1
+
+
C 1 +C T
C3
C2
−1
~ C L MAX.=
1
1
1
+
+
C 1 +C T
C3
C2
−1
When these calculation results are substituted for the following equation for load resonance frequency, the oscillation
frequency can be obtained.
fL = fs
C1
+1
2 (C 0 + C L )
Handling Notes
Vcc
C4
0.01µ
R1
C2
C5
C1
Ct
R2
OUT
C3
R3
Select each circuit constant so that the adjustment ranges of upper and lower frequencies of this circuit are even on the basis
of the frequency of a single crystal unit measured using a specified load capacity, and that the margin of ±8 to 10 ×10-6 of the
room temperature deviation of the crystal unit can be reserved.
To prevent the decrease in the negative resistance, always connect the crystal unit to the base of the transistor. For transistors
used for oscillation circuits, hfe and fT are important.
To obtain the large negative resistance with small current consumption, select a transistor for high frequency amplification with
hfe of over 250 and fT of 1GHz or more.
(7) Transistor third overtone oscillation circuit
qThe resonance circuit comprised of L2 and C3 is required on the emitter side for preventing fundamental mode crystal
oscillation. Set the resonance frequency to a value higher than the intermediate between fundamental wave frequency and
third overtone frequency.
w Use L1, referred to as an elongation coil, to connect the load capacitance of the oscillation circuit in series. R1 prevents selfexcited oscillation by L1. Since it is difficult in general to design the oscillation circuit having adequate negative resistance in
the overtone oscillation frequency band, there are no other effective means of obtaining adequate oscillation margin except
for preventing the increase of load resonance resistance RL of the crystal unit.
Handling Notes
R L in the equation of load resonance resistance can be made equal to R S by connecting CL in series, or making it infinite, which
prevents increase in the load resonance resistance.
R L = R 1 1+
C0
CL
2
Vcc
C5
R2
C2
C6
L1
OUT
R1
R3
C1
Ct
C3
L2
C4
1000P
R4
To prevent decrease in the negative resistance, connect the crystal unit to the base of the transistor as in the fundamental
mode crystal oscillation circuit. To use the crystal circuit for both oscillation and multiplication, connect a parallel resonance
circuit having multiplication frequency as resonance frequency to the collector of the transistor.
When selecting circuit constants for zero adjustment range by trimmer capacitor, set the constants to values obtained by
adding approx. ±12 to 15×10-6 to the room temperature deviation of the crystal unit, centering the value obtained by measuring
the crystal unit with load capacitances in series. (When the room temperature deviation specification of the crystal unit is
±10×10-6)
(8) Excitation power of oscillation circuit
Normal operation of crystal units is not assured when excitation power is raised. The allowable excitation power varies
depending on the shape of the crystal unit or the stability of targeted frequency. When highly accurate oscillation is required,
however, it is recommended to use an oscillation circuit with an excitation power of 5 to 50 µW or less. For other cases, refer to
individual relevant crystal units on the pages of the catalog.
(9) Precautions for designing printed circuit board
Be sure to design printed circuit board patterns that connect a crystal unit with other oscillation elements so that the lengths of
such patterns become shortest possible to prevent deterioration of characteristics due to stray capacitances and wiring
inductance. For multi-layer circuit boards, it is important not to wire the ground and other signal patterns right beneath the
oscillation circuit.
Tape & Reel Specifications
Tape & Reel Specifications
ICrystal Units
T
A
P
E
R
E
E
L
CX-2520SB
CX-3225SB
(CX-101F)
A
2.0±0.05
2.0±0.05
B
4.0±0.1
4.0±0.1
C
φ1.55±0.05
φ1.55±0.05
D
4.0±0.05
4.0±0.05
E
3.5±0.05
3.5±0.05
F
1.75±0.1
1.75±0.1
G
8.0±0.2
8.0±0.2
H
φ1.05±0.1
φ1.05±0.1
J
3.5±0.1
3.5±0.1
L
2.8±0.1
2.8±0.1
N
0.85±0.1
0.85±0.1
O
0.25±0.05
0.25±0.05
P
φ180+0/−3
φ180+0/-3
Q
φ60+1/−0
φ60+1/−0
R
φ13±0.2
φ13±0.2
S
φ21±0.8
φ21±0.8
U
2.0±0.5
2.0±0.5
W
9±1
9±1
3000/1000
3000/1000
KSX-23
CX-4025S
KSX-35
CX-96F
CX-53F
CX-53G
CX-8045G
CX-17F
2.0±0.1
2.0±0.1
2.0±0.1
2.0±0.1
2.0±0.1
Qty
A
T
A
P
E
R
E
E
L
Feed direction
2.0±0.1
CX-49F
CX-5FW
CX-5FD
CX-49L
2.0±0.1
2.0±0.1
2.0±0.1
B
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
4.0±0.1
C
φ1.5+0.1/-0
φ1.55±0.05
φ1.5±0.1
φ1.55±0.1
φ1.5±0.1
φ1.5±0.1
φ1.55±0.05
φ1.55±0.05
φ1.5±0.1
D
4.0±0.1
4.0±0.1
8.0±0.1
8.0±0.1
8.0±0.1
8.0±0.1
8.0±0.1
12.0±0.1
16.0±0.1
E
5.5±0.1
5.5±0.1
5.5±0.1
5.5±0.1
7.5±0.1
7.5±0.1
11.5±0.1
11.5±0.1
11.5±0.1
F
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
1.75±0.1
G
12.0±0.3
12.0±0.3
12.0±0.3
12.0±0.2
16.0±0.3
16.0±0.3
24.0±0.3
24.0±0.3
24.0±0.3
H
φ1.5+0.1/-0
φ1.05±0.1
φ1.5±0.1
φ1.55±0.1
φ1.55±0.05
φ1.6±0.1
φ2.05±0.05
φ2.05±0.05
φ2.2±0.1
J
3.5±0.1
4.2±0.1
5.5±0.1
5.4±0.1
8.4±0.1
6.5±0.1
11.5±0.1
12.2±0.1
−−−
L
2.8±0.1
2.7±0.1
3.7±0.1
3.6±0.1
4.9±0.1
4.2±0.1
5.4±0.1
5.85±0.1
−−−
N
1.0±0.1
0.95±0.05
1.4±0.1
1.7±0.1
2.1±0.1
1.5±0.1
5.5±0.1
2.8±0.1
6.5±0.1
O
0.3±0.05
0.2±0.05
0.3±0.05
0.25±0.05
0.3±0.05
0.2±0.05
0.3±0.05
0.3±0.05
0.5±0.05
P
φ330±2
φ180+0/-3
φ330±2φ178±2 φ330±2/φ254±2 φ330±2/φ254±2 φ330±2/φ178±2
φ330±2
φ330±2
φ330±2
Q
φ100±1
φ60+1/−0
φ80±2φ100±1
φ100±1
φ80±1
φ80±2
φ100±1
φ100±1
φ100±1
R
φ13±0.2
φ13±0.2
φ13±0.2
φ13±0.2
φ13±0.2
φ13±0.2
φ13±0.5
φ13±0.5
φ13±0.5
S
φ21±0.8
φ21±0.8
φ21±0.8
φ21±0.8
φ21±0.8
φ21±0.8
φ21±0.5
φ21±0.5
−−−
U
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.5
2.0±0.2
2.0±0.5
−−−
13.5±0.5
13±1
13.5+1/−0.5
13.4+2/−0
16.0+2/−0
17.5+2/−0
25.5±0.5
24.4+2/−0
25.5+1/−0.5
5000/3000
3000/1000
5000/1000
3000/1000
3000/1000
5000/1000
1000
1000
5000
W
Qty
Crystal Units
ORDERING FORMAT FOR CRYSTAL UNITS
Please specify the following items when ordering crystal units.
1. Type
____________
2. Nominal Frequency
____________ Hz
3. Overtone order
_______________
4. Frequency Tolerance
_____________________ ×10-6 MAX. (at 25˚C)
5. Frequency Stability vs. Temperature Range (referred to 25˚C)
________________________________ ×10-6 MAX, ______˚C ~______˚C
6. Motional Resistance
_____________________ Ω MAX.
7. Load Capacitance(CL)
_____________________ pF
8. Drive Level
_____________________ mW
9. Shunt Capacitance(Co)
______________________ pF Max.
10. Others
______________________________________
11. Marking
______________________________________
12. Application
______________________________________