Data Sheet PIN diode RN141S Dimensions (Unit : mm) Applications High frequency switching 0.12±0.05 0.8 0.6 0.8±0.05 Land size figure (Unit : mm) 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra small mold type. (EMD2) 2) High frequency resistance is very small. EMD2 Construction Silicon epitaxial planer 0.3±0.05 Structure 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 1.25 0.06 1.26±0.05 0 0 8.0±0.15 0.6 1.25 1.3±0.06 0.06 0 0 2.40±0.05 2.45±0.1 3.5±0.05 1.75±0.1 4.0±0.1 0.2 φ0.5 0.95±0.06 0.90±0.05 0 Absolute maximum ratings(Ta=25°C) Parameter Symbol Reverse voltage (repetitive peak) VR IF Reverse voltage (DC) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage 4.0±0.1 空ポケット Empty pocket Limits 2.0±0.05 0.76±0.05 0.75±0.05 Unit V mA °C °C 50 100 150 -55 to +150 Min. Typ. Max. Unit - - 1.0 V Conditions IF=10mA Reverse current Capacitance between terminals IR - - 0.1 μA VR=50V Ct - - 0.8 pF VR=1.0V , f=1MHz Forward resistance Rf - - 2 IF=3mA,f=100MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.03 - Rev.C Data Sheet RN141S 100 Ta=150℃ 10 Ta=125℃ 10 f=1MH 10 Ta=75℃ Ta=25℃ 1 Ta=-25℃ 0.1 1 Ta=75℃ 0.1 Ta=25℃ 0.01 Ta=-25℃ 0.001 0.0001 0 100 200 300 400 500 600 700 800 900 1000 1100 10 20 30 40 50 0 f=10MHz f=100MHz FORWARD VOLTAGE:VF(mV) Ta=25℃ VR=0V CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 850 1 1 0.1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 10 1 0.01 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD OPERATING RESISTANCE:rf(Ω) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) Ta=150℃ Ta=25℃ IF=10mA n=30pcs 840 830 820 810 AVE:826.1mV 0.1 0.1 1 10 1 FORWARD CURRENT:IF(mA) rf-IF CHARACTERISTICS 2 1000 VF DISPERSION MAP 1.5 1.4 1.2 1 0.8 AVE:0.137nA 0.4 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.2 0.1 0 0 IR DISPERSION MAP AVE:0.663pF Ta=25℃ f=100MHz IF=3mA n=10pcs 1.4 FORWARD OPERATING RESISTANCE:rf(Ω) 1.6 Ta=25℃ f=1MHz VR=1V n=10pcs 0.9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 10 100 FREQUENCY(MHz) Ct-f CHARACTERISTICS 1 Ta=25℃ VR=50V n=30pcs 1.8 0.6 800 0.1 1.3 1.2 1.1 1 0.9 0.8 0.7 AVE:0.941Ω 0.6 0.5 Ct DISPERSION MAP FORWARD CURRENT:IF(mA) rf DISPERSION MAP ELECTROSTATIC DDISCHARGE TEST ESD(KV) 5 4 3 AVE:1.55kV 2 AVE:0.36kV 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.03 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A