New Product SS12P4C Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency • Low thermal impedance 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-277A (SMPC) K Cathode Anode 1 • Halogen-free according to IEC 61249-2-21 definition Anode 2 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 6.0 A VRRM 40 V IFSM 150 A EAS 20 mJ VF at IF = 6.0 A 0.40 V TJ max. 125 °C Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum average forward rectified current (2) UNIT S124C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) (1) SS12P4C VRRM total device per diode total device IF(AV) 40 V 12 A 6.0 IF(AV) 3.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 20 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, at TJ = 25 °C per diode IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG - 55 to + 125 °C Notes (1) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink (2) Free air, mounted on recommended copper pad area Document Number: 89141 Revision: 13-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. IF = 1 A IF = 3 A Instantaneous forward voltage per diode TA = 25 °C IF = 6 A VF (1) IF = 1 A IF = 3 A TA = 100 °C IF = 6 A Reverse current per diode Rated VR Typical junction capacitance per diode 4.0 V, 1 MHz TA = 25 °C TA = 100 °C IR (2) CJ MAX. 0.34 - 0.40 - 0.46 0.52 0.24 - 0.31 - 0.40 0.45 UNIT V 129 500 µA 11.9 25 mA 400 - pF Notes (3) Pulse test: 300 µs pulse width, 1 % duty cycle (4) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance SS12P4C (1) UNIT 100 RJM (2) °C/W 3 Notes (1) Free air, mounted on recommended copper pad area. Thermal resistance R JA - junction to ambient. (2) Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink. Thermal resistance R JM - junction to mount. ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS12P4C-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel 0.10 87A 6500 13" diameter plastic tape and reel SS12P4C-M3/87A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS12P4CHM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel SS12P4CHM3/86A Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 14 Notes • Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink, TM measured at the terminal of cathode band (RJM = 3 °C/W) • Free air, mounted on recommended copper pad area (RJA = 100 °C/W) TM = 100 °C (1) DC Forward Current (A) 12 10 8 6 TA = 25 °C (2) 4 2 0 0 25 50 75 100 125 150 Ambient Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89141 [email protected], [email protected], [email protected] Revision: 13-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 000 D = 0.2 D = 0.3 D = 0.5 D = 0.8 D = 0.1 Junction Capacitance (pF) Average Power Loss (W) Vishay General Semiconductor D = 1.0 T D = tp/T 1000 100 tp 10 0 1 2 3 4 5 6 0.1 7 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 000 Junction Capacitance (pF) 100 Instantaneous Forward Current (A) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 100 °C 10 TA = 125 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient IThermal mpedance Per Diode Instantaneous Reverse Current (mA) 100 TA = 125 °C TA = 100 °C 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Document Number: 89141 Revision: 13-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS12P4C Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89141 [email protected], [email protected], [email protected] Revision: 13-May-11 This document is subject to change without notice. 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